Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TC55VEM208ASTN Search Results

    SF Impression Pixel

    TC55VEM208ASTN Price and Stock

    Toshiba America Electronic Components TC55VEM208ASTN55

    524,288-WORD BY 8-BIT STATIC RAM Standard SRAM, 512KX8, 70ns, CMOS, PDSO32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TC55VEM208ASTN55 74
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    TC55VEM208ASTN Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55VEM208ASTN Toshiba SRAM - Low Power Original PDF
    TC55VEM208ASTN40 Toshiba 524,288 Word By 8 Bit Static RAM Original PDF
    TC55VEM208ASTN40 Toshiba Original PDF
    TC55VEM208ASTN55 Toshiba 524,288 Word By 8 Bit Static RAM Original PDF
    TC55VEM208ASTN55 Toshiba Original PDF

    TC55VEM208ASTN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC55VEM208ASTN

    Abstract: TC55VEM208ASTN40
    Text: TC55VEM208ASTN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55VEM208ASTN is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to


    Original     		PDF TC55VEM208ASTN40 288-WORD TC55VEM208ASTN 304-bit

    TC55VEM208ASTN

    Abstract: TC55VEM208ASTN40
    Text: TC55VEM208ASTN40,55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55VEM208ASTN is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to


    Original     		PDF TC55VEM208ASTN40 288-WORD TC55VEM208ASTN 304-bit

    TC55VEM208ASTN40

    Abstract: TC55VEM208ASTN
    Text: TC55VEM208ASTN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55VEM208ASTN is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to


    Original     		PDF TC55VEM208ASTN40 288-WORD TC55VEM208ASTN 304-bit

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    tsop-56 samsung

    Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
    Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:


    Original     		PDF 576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga

    th50vpf

    Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00
    Text: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. — TC59LM806CFT-50 — TC59LM806CFT-55


    Original     		PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 64M/32M th50vpf TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00

    TH58NVG2S3

    Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L
    Text: 2004-2 PRODUCT GUIDE MOS Memory semiconductor 2004 http://www.semicon.toshiba.co.jp/eng 1. Selection Guide DRAM Dynamic RAMs Network FCRAMTM (DDR FCRAM) 200 MHz (400 Mbps) 182 MHz (364 Mbps) 167 MHz (334 Mbps) 32M x 8 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60


    Original     		PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 TC59LM836DMB-30 TH58NVG2S3 TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L