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    TC58N Price and Stock

    KIOXIA TC58NVG2S0HBAI6

    IC FLASH 4GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NVG2S0HBAI6 Tray 338 1
    • 1 $3.94
    • 10 $3.503
    • 100 $3.14575
    • 1000 $2.96249
    • 10000 $2.96249
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    Mouser Electronics TC58NVG2S0HBAI6 1,140
    • 1 $3.94
    • 10 $3.15
    • 100 $3.15
    • 1000 $3.15
    • 10000 $3.15
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    KIOXIA TC58NVG0S3HBAI6

    IC FLASH 1GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NVG0S3HBAI6 Tray 338 1
    • 1 $2.38
    • 10 $2.11
    • 100 $1.89525
    • 1000 $1.725
    • 10000 $1.725
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    Mouser Electronics TC58NVG0S3HBAI6 237
    • 1 $2.38
    • 10 $1.9
    • 100 $1.9
    • 1000 $1.9
    • 10000 $1.9
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    KIOXIA TC58NYG0S3HBAI4

    IC FLASH 1GBIT PARALLEL 63TFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG0S3HBAI4 Tray 210 1
    • 1 $4.09
    • 10 $2.733
    • 100 $4.09
    • 1000 $1.8
    • 10000 $1.8
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    Mouser Electronics TC58NYG0S3HBAI4
    • 1 $3.14
    • 10 $2.83
    • 100 $2.83
    • 1000 $2.83
    • 10000 $2.83
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    KIOXIA TC58NVG0S3HBAI4

    IC FLASH 1GBIT PARALLEL 63TFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NVG0S3HBAI4 Tray 190 1
    • 1 $3.18
    • 10 $2.822
    • 100 $2.62725
    • 1000 $2.2776
    • 10000 $2.21791
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    KIOXIA TC58NYG2S0HBAI6

    IC FLASH 4GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG2S0HBAI6 Tray 170 1
    • 1 $4.63
    • 10 $4.109
    • 100 $3.68988
    • 1000 $3.30312
    • 10000 $3.23416
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    Mouser Electronics TC58NYG2S0HBAI6 313
    • 1 $3.18
    • 10 $2.97
    • 100 $2.97
    • 1000 $2.86
    • 10000 $2.86
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    Find more TC58N price and stock on Findchips.com

    TC58N Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58NS100DC Toshiba EEPROM, 1GBit (128M, 8-Bit) CMOS NAND EEPROM Original PDF
    TC58NS100DC Toshiba 1 GBit CMOS NAND EPROM Original PDF
    TC58NS128ADC Toshiba Original PDF
    TC58NS128ADC-T051 Toshiba EEPROM Serial, 128Mbits Density, 3.3V Supply, Tape and Reel Original PDF
    TC58NS128BDC Toshiba 128-MBIT (16M x 8 BITS) CMOS NAND E2PROM (16M BYTE SmartMediaTM) Original PDF
    TC58NS128DC Toshiba Vcc: -0.6 to 46V 0.3W 128Mbit (16M x 8-bits) CMOS NAND E2PROM (16M BYTE smart media) Original PDF
    TC58NS128DC-T051 Toshiba EEPROM Serial, 128Mbits Density, 3.3V Supply, Tape and Reel Original PDF
    TC58NS256ADC Toshiba Original PDF
    TC58NS256ADC-T051 Toshiba EEPROM Serial, 256Mbits Density, 3.3V Supply, Tape and Reel Original PDF
    TC58NS256BDC Toshiba 256-MBIT (32M x 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) Original PDF
    TC58NS256DC Toshiba Original PDF
    TC58NS256DC-T051 Toshiba EEPROM Serial, 256Mbits Density, 3.3V Supply, Tape and Reel Original PDF
    TC58NS512ADC Toshiba 512-MBIT (64M x 8 BITS) CMOS NAND E2PROM (64M BYTE SmartMediaTM) Original PDF
    TC58NS512DC Toshiba Original PDF
    TC58NS512DC-T051 Toshiba EEPROM Serial, 512Mbits Density, 3.3V Supply, Tape and Reel Original PDF
    TC58NVG0S3AFT Toshiba EEPROM, 1GBIT (128M, 8-BitS) CMOS NAND E2PROM Original PDF
    TC58NVG0S3AFT00 Toshiba 1 GBit CMOS NAND EPROM Original PDF
    TC58NVG0S3AFT05 Toshiba 1024 Mbits NAND EEPROM Original PDF
    TC58NVG0S3AFTI Toshiba EEPROM, 1GBIT (128M, 8-BitS) CMOS NAND E2PROM Original PDF
    TC58NVG0S3HBAI4 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 1G PARALLEL 63TFBGA Original PDF

    TC58N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC58NVG1S3ETA00

    Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
    Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2010-01-25C TC58NVG1S3ETA00 TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111 PDF

    TC58NYG0S3E

    Abstract: TC58NYG0S3ETA00 TC58NYG0S
    Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S PDF

    tc58nc

    Abstract: tc58nc344 TC58NC353F DIN 50960 TC58NC353 47040 250880 c58nc 05735A00 031C4
    Text: TC58NC353F/354F TC58NC353F/354F High Capacity Flash Disk Controller Chip Set OUTLINE TC58NC353 and TC58NC354 are a controller chip set for the PC Card ATA * and IDE Drive. By using TC58NC353 only, up to 8 NAND flash memories of 128M to 1Gbit can be connected by the unit of 1 (e.g. 1,2,3…7,8). In case of


    Original     		TC58NC353F/354F TC58NC353 TC58NC354 TC58NC353 3920Mbytes tc58nc tc58nc344 TC58NC353F DIN 50960 47040 250880 c58nc 05735A00 031C4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		TC58NYG1S3HBAI6 TC58NYG1S3HBAI6 2048blocks. 2176-byte 2013-01-18C PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG2S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.


    Original     		TC58NVG2S0FTAI0 TC58NVG2S0F 2048blocks. 4320-byte PDF

    TC58NYG1S3EBAI4

    Abstract: P-TFBGA63-0911-0
    Text: TC58NYG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		TC58NYG1S3EBAI4 TC58NYG1S3E 2048blocks. 2112-byte 2012-09-01C TC58NYG1S3EBAI4 P-TFBGA63-0911-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NS512ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia ) DESCRIPTION The TC58NS512A is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable


    Original     		TC58NS512ADC 512-MBIT TC58NS512A 528-byte PDF

    TC58NS128ADC

    Abstract: SmartMediaTM Physical Format Specifications SmartMedia Logical Format ID maker code
    Text: TC58NS128ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M ´ 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128A is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable


    Original     		TC58NS128ADC 128-MBIT TC58NS128A 528-byte 528-byte TC58NS128ADC SmartMediaTM Physical Format Specifications SmartMedia Logical Format ID maker code PDF

    TC58NS256ADC

    Abstract: No abstract text available
    Text: TC58NS256ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M ´ 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256A is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable


    Original     		TC58NS256ADC 256-MBIT TC58NS256A 528-byte 528-byte TC58NS256ADC PDF

    TC58NVG2S3ETA00

    Abstract: TC58NVG2S3E NAND read disturb TC58NVG2S3 tc58nvg2s
    Text: TC58NVG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		TC58NVG2S3ETA00 TC58NVG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3ETA00 NAND read disturb TC58NVG2S3 tc58nvg2s PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HBAI4 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		TC58NVG1S3HBAI4 TC58NVG1S3HBAI4 2048blocks. 2176-byte 2013-01-18C PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HTA00 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		TC58NVG1S3HTA00 TC58NVG1S3HTA00 2048blocks. 2176-byte 2013-01-18C PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3HBAI6 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		TC58NVG1S3HBAI6 TC58NVG1S3HBAI6 2048blocks. 2176-byte 2013-01-18C PDF

    TC58NS256BDC

    Abstract: ssfdc
    Text: TC58NS256BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M u 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256B is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable


    Original     		TC58NS256BDC 256-MBIT TC58NS256B 528-byte 528-byte TC58NS256BDC ssfdc PDF

    SmartMediaTM Physical Format Specifications

    Abstract: ssfdc ETC 527 TC58NS128BDC TC58NS256BDC
    Text: TC58NS128BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M u 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128B is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable


    Original     		TC58NS128BDC 128-MBIT TC58NS128B 528-byte 528-byte SmartMediaTM Physical Format Specifications ssfdc ETC 527 TC58NS128BDC TC58NS256BDC PDF

    TC58NVG2S3ETAI0

    Abstract: TC58NVG2S3E TC58NVG2S3
    Text: TC58NVG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		TC58NVG2S3ETAI0 TC58NVG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3ETAI0 TC58NVG2S3 PDF

    TC58NVG1S3BTG00

    Abstract: TC58NVG1S3 bad block PSL 26 tc58nvg tc58nvg1 DIN2111 PA15 PA16 NPA16
    Text: TC58NVG1S3BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM Lead-Free DESCRIPTION The TC58NVG1S3B is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048 blocks.


    Original     		TC58NVG1S3BTG00 TC58NVG1S3B 2112-byte 004-08-20A TC58NVG1S3BTG00 TC58NVG1S3 bad block PSL 26 tc58nvg tc58nvg1 DIN2111 PA15 PA16 NPA16 PDF

    TC58NVG0S3ETA00

    Abstract: TC58NVG0S3ET tc58nvg0s3eta TC58NVG0S3E TC58NVG DIN2111 PA15 2011-03-01C
    Text: TC58NVG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NVG0S3ETA00 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3ETA00 TC58NVG0S3ET tc58nvg0s3eta TC58NVG DIN2111 PA15 2011-03-01C PDF

    TC58NVG0S3ET

    Abstract: TC58NVG0S3ETAI0 tc58nvg0s3eta tc58nvg0s3e tc58nvg 48-P-1220-0 0x000160
    Text: TC58NVG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NVG0S3ETAI0 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3ET TC58NVG0S3ETAI0 tc58nvg0s3eta tc58nvg 48-P-1220-0 0x000160 PDF

    tc58nyg1s3ebai5

    Abstract: TC58NYG1
    Text: TC58NYG1S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		TC58NYG1S3EBAI5 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C tc58nyg1s3ebai5 TC58NYG1 PDF

    TC58NVG0S3EBAI4

    Abstract: TC58NVG0S3EBA tc58nvg0s3e tc58nvg0s3eta TC58NVG0S3ETA00 TC58NVG0S3ET
    Text: TC58NVG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NVG0S3EBAI4 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3EBAI4 TC58NVG0S3EBA tc58nvg0s3eta TC58NVG0S3ETA00 TC58NVG0S3ET PDF

    TC58NYG0S3ETAI0

    Abstract: TC58NYG0S
    Text: TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NYG0S3ETAI0 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETAI0 TC58NYG0S PDF

    P-TFBGA63-0813-0

    Abstract: TC58NYM9S3EBAI3
    Text: TC58NYM9S3EBAI3 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.


    Original     		TC58NYM9S3EBAI3 TC58NYM9S3E 512Mbit 128bits) 512blocks. 2112-byte 011-03-01A P-TFBGA63-0813-0 TC58NYM9S3EBAI3 PDF

    TC58NYG2S3ETAI0

    Abstract: toshiba NAND ID code
    Text: TC58NYG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		TC58NYG2S3ETAI0 TC58NYG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NYG2S3ETAI0 toshiba NAND ID code PDF