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    Toshiba America Electronic Components TC58V64BFTI

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    TC58V64BFTI Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58V64BFTI Toshiba Memory, 0.3 Power Dissipation, Industrial Original PDF
    TC58V64BFTI(EL) Toshiba Memory, 0.3 Power Dissipation, Industrial, Tape and Reel Original PDF

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    TC58V64BFTI

    Abstract: TC58V64B
    Text: TC58V64BFTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64-MBIT 8M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC58V64B is a single 3.3 V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 16 pages × 1024 blocks. The device has a 528-byte


    Original     		TC58V64BFTI 64-MBIT TC58V64B 528-byte 528-byte TC58V64BFTI PDF