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    TC59R1809

    Abstract: No abstract text available
    Text: High Speed Dynamic RAM Rambus DRAM Capacity Type No. Data Transfer Rats ns Organization Max Min Hit Latency (ns) Read Writs Power Power Supply (V) Dissipation (mW) No. of Pins 4.5MBit ‘ TC59R0409VK 524,288 x 9 2 5 48 16 5V±10% 1325 32 18MBit "TC59R1809VK


    OCR Scan     		PDF 18MBit TC59R0409VK TC59R1809VK TC85RT000VK SVP32 SVP42 TC59S1604FT/FTL-10 TC59S1604FT/FTL-12 C59S1608FT/FTL-10 TC59S1608FT/FTL-12 TC59R1809

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    Abstract: No abstract text available
    Text: • TOSHIBA TOTTEMfl G G S S Q S D MbM ■ TOSE TC59R1609VK TOSHIBA L06 IC/MFM0RY bSE » SILICON GATE CMOS 18 Mbit RDRAM t a r g e t DESCRIPTION The TC59R1609VK is a new generation ultra high speed CMOS Rambus™ DRAM organized as 2MX9. The TC59R1609VK uses advanced circuit design techniques with standard CMOS process technology. It


    OCR Scan     		PDF TC59R1609VK TC59R1609VK