Untitled
Abstract: No abstract text available
Text: tm TE CH Preliminary T2316167A 1024K x 16 DYNAMIC RAM DRAM EDO PAGE MODE FEATURES GENERAL DESCRIPTION • Industry-standard x 16 pinouts and timing functions. • Single 3.3V ± 0.3V power supply. • All device pins are LVTTL- compatible. • 1K-cycle refresh in 16ms.
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T2316167A
1024K
T2316167A
44/50L
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Untitled
Abstract: No abstract text available
Text: tm TE CH Preliminary T2316167A 1024K x 16 DYNAMIC RAM DRAM EDO PAGE MODE FEATURES GENERAL DESCRIPTION • Industry-standard x 16 pinouts and timing functions. • Single 3.3V ± 0.3V power supply. • All device pins are LVTTL- compatible. • 2K-cycle refresh in 32ms.
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T2316167A
1024K
T2316167A
44/50L
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PM7351
Abstract: PM7328 PM7329 PM7350 432PIN
Text: Release PM7328 S/UNI-ATLAS-1K800 ATM Layer Solution FEATURES • Monolithic single chip device which handles bi-directional ATM Layer functions including VPI/VCI address translation, cell appending, policing ingress only , cell counting and OAM requirements for 1024 VCs (virtual
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PM7328
S/UNI-ATLAS-1K800
PM7329
S/UNIAPEX-1K800
PMC-2010037
PM7351
PM7328
PM7350
432PIN
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IC 741 OPAMP
Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte
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hef4750
Abstract: IC04 LOCMOS HE4000B Logic storage temperature HEF4750VD equivalent The IC04 LOCMOS HE4000B Logic temperature IC04 LOCMOs Logic family specifications hef4750vd HEF4750V
Text: INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: • The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC • The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC HEF4750V LSI Frequency synthesizer Product specification
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HE4000B
HEF4750V
HEF4750V
hef4750
IC04 LOCMOS HE4000B Logic storage temperature
HEF4750VD equivalent
The IC04 LOCMOS HE4000B Logic temperature
IC04 LOCMOs Logic family specifications
hef4750vd
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MSP50C30
Abstract: MSP50C34 bc 338-25 equivalent SPSU012 PSA B21 TSP50C30
Text: MSP50C30 MixedĆSignal Processor User’s Guide 2000 Mixed-Signal Products SPSU012A IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest
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MSP50C30
SPSU012A
SPSS021
R-PQFP-G100)
4040022/B
MS-022
MSP50C30
MSP50C34
bc 338-25 equivalent
SPSU012
PSA B21
TSP50C30
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108F00
Abstract: tca 335 A MSP50C30 psa 200 53 TAM bra 94 SPSU012 TSP50C30 SPSS021
Text: MSP50C30 Mixed-Signal Processor User’s Guide SPSU012 NOVEMBER 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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MSP50C30
SPSU012
SPSS021
R-PQFP-G100)
MS-022
108F00
tca 335 A
MSP50C30
psa 200
53 TAM
bra 94
SPSU012
TSP50C30
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T2316162A
Abstract: T2316162
Text: tm TE CH T2316162A 1024K x 16 DYNAMIC RAM DRAM EDO PAGE MODE FEATURES GENERAL DESCRIPTION • Industry-standard x 16 pinouts and timing functions. • Single 5V ± 10% power supply. • All device pins are TTL- compatible. • 1K-cycle refresh in 16ms.
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T2316162A
1024K
T2316162A
44/50L
T2316162
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Untitled
Abstract: No abstract text available
Text: IBM11S1320LN IBM11S1320LL 1M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tcA C CAS Access Time 15ns 20ns tAA Access Time From Address 30ns 35ns tR C Cycle Time 110ns 130ns
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IBM11S1320LN
IBM11S1320LL
72-Pin
110ns
130ns
128ms
1Mx32
1Mx16
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Untitled
Abstract: No abstract text available
Text: KM48V514B/B L/BLL CMOS DRAM 512 K x 8 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tRA C tCA C tn c tH PC KM48V514B/BL/BLL-6 60ns 17ns 110ns 24ns KM48V514B/BL/BLL-7 70ns 20ns 130ns 29ns KM48V514B/BL/BLL-8
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KM48V514B/B
KM48V514B/BL/BLL-6
110ns
KM48V514B/BL/BLL-7
130ns
KM48V514B/BL/BLL-8
150ns
cycle/16ms
KM48V514B/BL/BLL
28-LEAD
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Untitled
Abstract: No abstract text available
Text: KM M5361000B1 /B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000B1 is a 1M bits x 36 Dynamic RAM KMM5361000B1-6 tR A C tcA c tn c 60ns 15ns 110ns high density memory module. The Sam sung
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M5361000B1
KMM5361000B1
KMM5361000B1
KMM5361000B1-6
KMM5361000B1-7
KMM5361000B1-8
110ns
130ns
150ns
20-pin
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tsop 338 IR
Abstract: L7BL 8AGD km49c512bj
Text: KM49C512B/BL/BLL CMOS DRAM 5 1 2 K x 9 Bit CM OS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tCA C tR C 60ns 15ns 110ns K M 49C 5 1 2 B /B L /B L L -7 70ns 20ns 130ns KM 49C 512B /B L7B LL-8 ' 80ns 20ns 150ns
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KM49C512B/BL/BLL
28-LEAD
tsop 338 IR
L7BL
8AGD
km49c512bj
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Untitled
Abstract: No abstract text available
Text: IBM11S1325L 1 M x 3 2 S O D IM M Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 I rac RAS Access Tim e 60ns 70 ns tcA G CAS Access Tim e 15ns 20 ns Ua A ccess Tim e From Address 30ns 35ns I rc Cycle Tim e 104ns 124ns
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IBM11S1325L
72-Pin
104ns
124ns
128ms
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Untitled
Abstract: No abstract text available
Text: KM48C514B/BL/BLL CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M 4 8 C 5 1 4 B /B L /B L L is a C M O S high • Performance range: tRAC tCA C tR C tH PC KM48C514B/BL/BLL-5 50ns 17ns 90ns
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KM48C514B/BL/BLL
KM48C514B/BL/BLL-5
KM48C514B/BIVBLL-6
110ns
KM48C514B/BUBLL-7
130ns
28-LEAD
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HEF4750V
Abstract: No abstract text available
Text: HEF4750V LSI FREQUENCY SYNTHESIZER The HEF4750V frequency synthesizer is one of a pair of LOCMOS devices, primarily intended for use in high-performance frequency synthesizers, e.g. in all communication, instrumentation, television and broadcast applications. A combination of analogue and digital techniques results in an integrated
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HEF4750V
HEF4750V
HEF4751V.
HEF4751V)
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TCA 700 y
Abstract: HEF4750V HEF4751V TCA 700 v HEF4751 TCA 700
Text: HEF4750V LSI FREQUENCY SYNTHESIZER The HEF4750V frequency synthesizer is one o f a pair o f LOCMOS devices, prim arily intended fo r use in high-performance frequency synthesizers, e.g. in all communication, instrumentation, television and broadcast applications. A com bination o f analogue and digital techniques results in an integrated
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HEF4750V
F4751V.
HEF4751V)
TCA 700 y
HEF4751V
TCA 700 v
HEF4751
TCA 700
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GM71V18163C
Abstract: No abstract text available
Text: GM71V18163C GM71VS18163CL LG S em icoo C o.,Ltd. # 1,048,576 W O R D S x 16 B IT CM OS D Y N A M IC RA M Description The Features G M 71V S 18163C /CL is the new generation dynam ic R A M organized 1,048,576 x 16 bit. G M 71V (S)18163C /CL has realized higher density, higher perform ance and various
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GM71V18163C
GM71VS18163CL
18163C
18163C/CL
42pin
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HEF4751V
Abstract: HEF4750V HEF4750VD
Text: HEF4750V LSI FREQUENCY SYNTHESIZER The H EF4750V frequency synthesizer is one of a pair of LOCMOS devices, primarily intended for use in high-performance frequency synthesizers, e.g. in all communication, instrumentation, television and broadcast applications. A combination of analogue and digital techniques results in an integrated
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HEF4750V
HEF4750V
EF4751V.
EF4751V)
EF4750V
HEF4751V
HEF4750VD
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HEF4751V
Abstract: hef4751
Text: HEF4750V LSI FREQUENCY SYNTHESIZER The H EF4750V frequency synthesizer is one o f a pair of LO CM O S devices, primarily intended for use in high-performance frequency synthesizers, e.g. in all communication, instrumentation, television and broadcast applications. A combination o f analogue and digital techniques results in an integrated
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HEF4750V
HEF4750V
HEF4751V.
HEF4751VJ
HEF475GV
HEF4751V
hef4751
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HEF4750VDF
Abstract: HEF4751V
Text: HEF4750V Signetics Frequency Synthesizer Product Specification Linear Products DESCRIPTION The HEF4750V frequency synthesizer is one of a pair of LOCMOS devices, primarily intended for use in high-perfor mance frequency synthesizers; e.g., in all communication, instrumentation, tele
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HEF4750V
HEF4750V
HEF4751V.
HEF4750VDF
HEF4751V
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TCA 720
Abstract: No abstract text available
Text: * GMM7321000CS/SG-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 W ORDS x 32 BIT CMOS DYNAMIC RAM MODULI- Features The GM M 7321000CS/SG is an 1M x 32 bits Dynamic RAM MODULIwhich is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pm SOJ package on single sides the
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GMM7321000CS/SG-60/70/80
7321000CS/SG
GMM7321000CS/SG
7321000C
7321000CS
21000C
GMM7321000CS/SG
TCA 720
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Untitled
Abstract: No abstract text available
Text: GMM7401000BS/SG-60/70/80 LG Semicon Co.,Ltd. Description The G M M 7401000BS/SG is m 1M x 40 bits Dynamic RAM MODULE which is assembled 10 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on single side the printed circuit board with decoupling capacitors.
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GMM7401000BS/SG-60/70/80
7401000BS/SG
GMM7401000BS/SG
GMM7401OOOBS
7401000BSG
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TCA 120
Abstract: M7810
Text: GMM781000CNS-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 W O R D S x 8 BIT CMOS DYNAMIC RAM MODULE Features • H igh D ensity Standard 30 pin m ounting 2 pcs o f 4M D R A M G M 71C 4400C J SO J • Fast Page M ode Capability • Single Pow er Supply
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GMM781000CNS-60/70/80
4400C
781000C
GMM781000CNS
TCA 120
M7810
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TAC 2J
Abstract: No abstract text available
Text: GMM7361000BS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W ORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 7361000BS/SG is a 1M x 36 bits Dynamic RAM MODULI: which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package and 4 pieces of 1M x lbit DRAMs
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GMM7361000BS
GMM7361000BSG
GMM7361000BS/SG
GMM7361000BS/SG-60/70/80
GMM7361OOOBS/SG
TAC 2J
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