a7y transistor
Abstract: RASH UD61466 A7X k
Text: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time
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UD61466
ns/80
PDIP18
D-01109
D-01101
a7y transistor
RASH
UD61466
A7X k
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UD61464DC
Abstract: 65536X4 RASH UD61464 RW100-50 A7X k
Text: Maintenance only UD61464 64K x 4 DRAM Features FPM facilitates faster data operation with predefined row address. Via 8 Dynamic random access memory address inputs the 16 address bits are transmitted into the internal 65536 x 4 bits manufactured address memories in a time-multiusing a CMOS technology
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UD61464
ns/80
D-01109
D-01101
UD61464DC
65536X4
RASH
UD61464
RW100-50
A7X k
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CRC10
Abstract: PM7324 PM7280
Text: PM7324 S/UNI-ATLAS PRELIMINARY ERRATA PMC-981505 ISSUE 2 S/UNI-ATLAS DATASHEET ERRATA PM7324 S/UNI_ATLAS DATA SHEET ERRATA PRELIMINARY ISSUE 2 : APR 1999 PM7324 S/UNI-ATLAS PRELIMINARY ERRATA PMC-981505 ISSUE 2 S/UNI-ATLAS DATASHEET ERRATA PUBLIC REVISION HISTORY
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PM7324
PMC-981505
PM7324
PMC-981505
PMC-971154
CRC10
PM7280
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PEB 4165 T
Abstract: 4166 ic equivalent SPT170 PEB31664 PEB31666 PEB4164 P-MQFP-64-1 PEB 4166 T
Text: Pr eli mi nar y Dat a Sh eet , DS1 , No v. 20 00 MuPP µC Multichannel Processor for POTS PEB 31666 Version 1.3 PEB 31664 Version 1.3 W ir e d C o m m u n i c a t io n N e v e r s t o p t h i n k i n g . Edition 2000-11-06 Published by Infineon Technologies AG,
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D-81541
PEB 4165 T
4166 ic equivalent
SPT170
PEB31664
PEB31666
PEB4164
P-MQFP-64-1
PEB 4166 T
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10 16s capacitor smd
Abstract: 226 smd capacitor RSM 2322 2222 632 series capacitor MOV 103 M 3 KV 336 smd CAPACITOR 2312 344 7 SMD resistor 474 2222 631 series capacitor SMD electrolytic capacitor
Text: Information New products and highlights i Ceramic capacitors Information Page Multilayer ceramic capacitors, NP0 10 V - 4000 V Multilayer ceramic capacitors, X7R 10 V - 2000 V Multilayer ceramic capacitors, Y5V 10 V - 250 V General purpose, high voltage capacitors 1000 V to 3000 V X7R and Y5V
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tld 82c
Abstract: lm317to220abh POL-100UF 74HCT245 HFBR5207 HFBR-5207 LM317 PM5355 VSC8110 1H-10
Text: PMC-Sierra, Inc. REFERENCE DESIGN ISSUE 3 PM5355 S/UNI-622 SATURN USER NETWORK INTERFACE PM5355 S/UNITM 622 S/UNI-622 ATM Reference Design with Multimode Optics Preliminary Information Issue 3: October 11, 1996 PMC-Sierra, Inc. 105-8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 415 6000
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PM5355
S/UNI-622
PM5355
S/UNI-622TM
PMC-950860
tld 82c
lm317to220abh
POL-100UF
74HCT245
HFBR5207
HFBR-5207
LM317
VSC8110
1H-10
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TCA 205 N
Abstract: TCA 200 y
Text: M7E D ÔE3SbOS 003S372 b • SIEG SIEMENS AKTIENGESELLSCHAF TCA 205 Proximity Switch Bipolar 1C Features • • • • • • Large supply voltage range High output current Antivalent outputs Adjustable switching distance Adjustable hysteresis Turn-on delay
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003S372
P-DIP-14
53SbGS
GD3S373
23SbG5
QG35377
T-65-05
B65939-A-X22
B65940-A-M1
IEOC0801
TCA 205 N
TCA 200 y
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TCA 200 y
Abstract: Window Discriminator "7 Segment Displays" TCA205 TCA965K 7 Segment Displays TCA671G
Text: Window discriminators Type TCA 965 K V Hi V ^10 V jxA Package outlines Pin configu Type ration, figure 15 3,0 6,0 10 9 Characteristics 7^mb = 25°C, Vs - 1 0 V Operating range V ^amb °c b mA Mo V h nA 4 , 7 5 . . 27 - 2 5 . 85 50 ±10 20 MICROPACK
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Untitled
Abstract: No abstract text available
Text: bOE D • SIEMENS fl235bDS 0GSD727 S73 « S I E G SIEMENS AKTIENGESELLSCHAF T ' é S - O á TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching
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fl235bDS
0GSD727
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NF 841 switching diode
Abstract: DIODE NF-841 TCA355B
Text: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier
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Untitled
Abstract: No abstract text available
Text: REVISION A DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] MTCA-XXX-XX-X-DV No OF POSITIONS -085 PER ROW DO NOT SC A LE FRO M THIS PRINT LEAD STYLE -02: 1.6 [.063] TH IC K C A R D P L A TIN G -S (SELEC TIVE ,00076[.000030] GOLD
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-085-02-X
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k3882
Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY524800 Series SEMICONDUCTOR 512KX 8-blt CMOS DRAM DESCRIPTION The HY524800 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY524800 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY524800
512KX
DD01410
561MAX.
1AC03-20-APR93
4b750Ã
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Untitled
Abstract: No abstract text available
Text: Proximity Switch Type 0TCA3O5A 0TCA3O5G T C A 305 K 0 TCA 355 B 0TCA355G TCA 305 TCA 355 Ordering Code Package Q67000-A2291 Q67000-A2305 Q67000-A2293 Q67000-A2443 Q67000-A2444 P-DIP-14 P-DSO-14 SMD MIKROPACK, 10 pins (SMD) P-DIP-8 similar to S O -8 (SMD)
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0TCA355G
Q67000-A2291
Q67000-A2305
Q67000-A2293
Q67000-A2443
Q67000-A2444
P-DIP-14
P-DSO-14
100nF
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GM 71 V S 1 6 4 0 0 B /B L is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. GM71 V (S )16400B /B L has realized higher density, higher performance and various functions by utilizing advanced CMOS
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16400B
GM71V
16400B/BL
300mil
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GM71V18160AT8
Abstract: C12N GM71V18160AJ-8
Text: @ LG Semicon. Co. LTD. Description Features The GM71V18160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V18160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.
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GM71V18160A
GM71V18160AT8
C12N
GM71V18160AJ-8
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GM 71V S 17800B/BL is the new generation dynamic R A M organized 2,097,152 w ords x 8 bit. G M 71V (S)17800B/BL has realized higher density, higher perform ance and various functions by utilizing a d v a n c e d C M O S p ro c e s s te c h n o lo g y . T he
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17800B/BL
28pin
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GM71V16160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V16160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.
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GM71V16160A
000Sb72
402A7S7
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Untitled
Abstract: No abstract text available
Text: S IE M E N S SAB 80C482, SAB 80C382 Telephone Controller Single-Chip 8-Bit CMOS Microcontroller • 2K X 8 ROM • Very Low Power Consumption • 64 X 8 RAM • Normal: 1.0 mA @ 5V @ 8 ju.s Cycle • 31 I/O Lines • Halt: 0.4 mA @ 5V @ 8 jus Cycle • 2.66 jus Cycle Time
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80C482,
80C382
80C482
80C382*
80C382-PC
80C382-MP
80C382-W
PLCC44
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a210k
Abstract: Mikroelektronik Heft "Mikroelektronik" Heft information applikation mikroelektronik mikroelektronik Heft 12 A211D A209K VEB mikroelektronik mikroelektronik DDR IC A211D
Text: INFORMATION APPLIKATIO N MIKROELEKTRONIK In fo r m a tio n - Applikation Die monolithisch integrierten N F-V erstärker A 210D A210K A211D Eigenschaften und ! Anwendung Mikroelektronik Heft 1 veb haîbîeîterwerk frankfurt/oder l e i t b e t r i e b im v e b k o m b i n a t m ik r o e le k t r o n ik
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A210K
A211D
Mikroelektronik Heft
"Mikroelektronik" Heft
information applikation mikroelektronik
mikroelektronik Heft 12
A211D
A209K
VEB mikroelektronik
mikroelektronik DDR
IC A211D
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5118320BJ/BFF60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM Description TheT C 5118320B J/B FT is the new generation dynamic RAM organized 524,288 w ords by 18 bits. T heT C 5118320B J/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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TC5118320BJ/BFF60/70
5118320B
TC5118320BJ/BFT
400mil)
I/024
I/032
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L70b
Abstract: 7010K HYM5C9256
Text: H Y UN DA I E L E C T R O N I C S • SIE » j:y u h d a i SEMICONDUCTOR • Mb7SGÖfi DOODflil T37 M H Y N K HYM5C9256 256KX9-Bit CMOS DRAM MODULE M 4212 0 2 B -O C T 9 1 DESCRIPTION The HYM5C9256M is a 256K words by 9 bits dynamic RAM module and consists of nine
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HYM5C9256
256KX9-Bit
HYM5C9256M
HY53C256LF
HYM5C9256-70
HYM5C9256-80
HYM5C9256-10
HYM5C9256-12
HYM5C9256
L70b
7010K
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71c464
Abstract: No abstract text available
Text: PRODUCTSPECIFICATION GM71C464 65,536WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM 71C464 is a high speed dynamic RAM or ganized 65,536 x 4 Bit. The GM71C464 utilizes Goldstar's silicon Gate process technology as well as advanced circuit techniques to provide wide operat
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GM71C464
536WORDS
71C464
GM71C464
GM71C464-80)
GM71C464-12)
/777//7777/77Z7
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULES KMM59256AN Units: Inches millimeters 0.550 ( 16.5 1 ) PACKAGE DIMENSIONS o 2G0 (5.08) TOLERANCES: ±0.0 0 5 (0.13) UNLESS OTHERWISE SPECIFIED 0.054 (1.37) 0.047 (1.19) eg SAM SUNG Electronics 312 MEMORY MODULES KMM59256AN 256K X 9 DRAM SIMM Memory Module
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KMM59256AN
KMM59256AN-8
150ns
KMM59256AN-10
100ns
180ns
KMM5925Ã
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