digital graphic equalizer ic
Abstract: idt tcam Broadcom WLAN 4 pin loco crystal oscillator HDTV sync generator DDR3 rDIMM Broadcom TCAM lvds MUX/DEMUX SE 135 ddr2 ram
Text: Quick Reference Guide Table of Contents Page URL Clock Generator/Synthesizer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
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79RC32438
16/16-KB
32-bit
16-bit
32-bits,
1-08/DG/BWD/HOP/2K
QRG-CORP-0018
digital graphic equalizer ic
idt tcam
Broadcom WLAN
4 pin loco crystal oscillator
HDTV sync generator
DDR3 rDIMM
Broadcom TCAM
lvds MUX/DEMUX
SE 135
ddr2 ram
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PDF
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tcam cypress
Abstract: cypress tcam idt tcam IXDP2401 T7560 IXDP2801 NEC 2851 75KTA162134 IXDP2851 IDT75K62134
Text: Network Search Engine Development Board for the Intel IXDP2401, IXDP2801 and IXDP2851 Development Platforms Product Brief 75KTA162134 Introduction ment. As a part of the complete IDT classification subsystem that includes content inspection engines, the IDT family of NSEs delivers high-performance, feature-rich, easy-to-use, integrated search accelerators.
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IXDP2401,
IXDP2801
IXDP2851
75KTA162134
IDT75KTA162134
tcam cypress
cypress tcam
idt tcam
IXDP2401
T7560
NEC 2851
75KTA162134
IXDP2851
IDT75K62134
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PDF
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idt tcam
Abstract: cypress tcam tcam cypress 75K62134 TCAM IDT75K62134 intel sram 114 PIN connector 75KTA062134-200 IDT71T75602
Text: Product Network Search Engine Brief Development Board for the Intel IXDP2400 Development 75KTA062134-200 Platform Introduction ment. As a part of the complete IDT classification subsystem that includes content inspection engines, the IDT family of NSEs delivers high-performance, feature-rich, easy-to-use, integrated search accelerators.
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IXDP2400
75KTA062134-200
IDT75KTA062134-200
75KTA062134-200
idt tcam
cypress tcam
tcam cypress
75K62134
TCAM
IDT75K62134
intel sram
114 PIN connector
IDT71T75602
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PDF
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renesas tcam
Abstract: tcam renesas idt tcam Ayama 20000 cypress tcam Sahasra 50000 NSE sahasra Sahasra 50000 tcam tcam cypress
Text: CYNSE20512 CYNSE20256 PRELIMINARY Ayama 20000 Network Search Engine Family Data Sheet Features — QDR-II up to 250 MHz, Burst-of-2 and Burst-of-4 — Convenient “Clamshellable” pinout for ease of board design • Fast search rates — Up to 266 million searches per second MSPS in
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CYNSE20512
CYNSE20256
72/144-bit
32/288-bit
576-bit
32-bit
166/200LVCMOS/200HSTL
renesas tcam
tcam renesas
idt tcam
Ayama 20000
cypress tcam
Sahasra 50000 NSE
sahasra
Sahasra 50000
tcam
tcam cypress
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PDF
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HN58V1001TI-25E
Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,
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REJ01C0001-1000
HN58V1001TI-25E
R1EX25256ATA00I
renesas tcam
tcam renesas
cypress tcam
idt tcam
r1qaa7218rbg
R1LV0816A
M5M51008DFP-55H
R1LV1616RBG-7SI
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PDF
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MV78230
Abstract: Xelerated tcam ARMADA 300 ECC ARMADA® XP MP Core Highly Integrated Marvell ARMv7 SoC Processors Datasheet
Text: MV78230/78x60 Functional Specifications MV78230, MV78260, and MV78460 ARMADA XP Family of Highly Integrated Multi-Core ARMv7 Based SoC Processors Functional Specifications – Unrestricted Doc. No. MV-S107021-U0, Rev. A May 29, 2014, Preliminary Marvell. Moving Forward Faster
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MV78230/78x60
MV78230,
MV78260,
MV78460
MV-S107021-U0,
MV78230/78x60
MV-S107021-U0
MV78230
Xelerated tcam
ARMADA 300 ECC
ARMADA® XP MP Core Highly Integrated Marvell ARMv7 SoC Processors Datasheet
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PDF
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 3 7E D • M302271 19796 [3027250 IHAS 3 T -V /-7 3 1mm Aperture Photon Coupled Interrupter Module H 2 2 B 4 ,H 2 2 B 5 ,H 2 2 B 6 T h e G E Solid State H 22B Interrupter M odule is a gallium arse
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M302271
92CS-42662
92CS-429S1
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HM4864AP-15
Abstract: 20 led VU meter HM4864A-12 HM4864A-15 HM4864A-20 HM4864AP-12 HM4864AP-20 hm4m M4864A-20
Text: HM4864A-12, HM4864A-15,-HM4864A-20, HM4864AP-12, HM4864AP-15, HM4864AP-20 6 5 5 3 6 - word x 1-b it Dynamic Random Access Memory • FEA TU R ES • Industry standard 16- Pin DIP plastic, Cerdip Single 5V (±10%) On chip substrate bias generator Low Power: 250mW active, 18mW standby
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HM4864A-12,
HM48B4A-1S
M4864A-20,
HM4864AP-12,
HM4864AP-15,
HM4864AP-20
250mW
120ns
150ns
200ns
HM4864AP-15
20 led VU meter
HM4864A-12
HM4864A-15
HM4864A-20
HM4864AP-12
HM4864AP-20
hm4m
M4864A-20
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PDF
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HM514256
Abstract: HM514256AP10 HM514256AJP8 HM514256AZP HM514256AP-12 HM514256AP-8 HM514256P-12S HM514256AP HM514256P-10S HM514256AJP10
Text: HM514256S Series-HM514256A Series 262144-Word 4-Bit CMOS Dynamic RAM x HM514256SP Series HM514256AP Series The Hitachi HM514256S/A is a CM O S dynamic RAM organized 262144-word x 4-bit. HM514256S/A has realized higher density, higher performance and various functions by employing 1.3 urn
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HM514256S
Series-------HM514256A
262144-Word
HM514256SP
HM514256AP
HM514256S/A
262144-word
HM514256
HM514256AP10
HM514256AJP8
HM514256AZP
HM514256AP-12
HM514256AP-8
HM514256P-12S
HM514256P-10S
HM514256AJP10
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 SERIES 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.
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MC-428000A32
32-BIT
428000A32-60
428000A32-70
cycles/32
72-pin
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58256
Abstract: 58256a
Text: HYUNDAI V i SEMICONDUCTOR HYM58256A 256KX 8-Bit C M O S DRAM MODULE M461201A-APR91 DESCRIPTION FEATURES The HYM58256A is a 256K words by 8 bits dynamic RAM module and consists of Fast Page mode CMOS DRAMs of two HY534256J in 20/26 pin SOJ mounted on a 30 pin glassepoxy printed circuit board. 0.22|iF decoupling
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HYM58256A
256KX
M461201A-APR91
HYM58256A
HY534256J
HYM58256AM
HYM58256AP
HYM58256A-60
HYM58256A-70
HYM58256A-80
58256
58256a
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HY51C4256
Abstract: block diagram of vu meter HY51C4254-10
Text: M• ■ HY51C4256 R Hyundai SEMICONDUCTOR A M151201B—APR91 DESCRIPTION FEATURES The HY51C4256 is a high speed, low power 262,144 X 4 CM OS dynamic random access memory. Fabricated with HYUNDAI CMOS technology, HY51C4256 offers a fast page m ode for high data bandw idth, fast usable
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HY51C4256
256KX4-Bit
M151201Bâ
APR91
S1C4256
block diagram of vu meter
HY51C4254-10
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HM4716
Abstract: HM4864P2
Text: H M 4 8 6 4 - 2 , H M 4 8 6 4 - 3 - HM4864P-2, HM4864P-3 6 5 5 3 6 -word x 1-bit Dynamic Random A cce ss Memory The HM4864 is a 65,536-words by 1-bit, MOS random access memory circuit fabricated with H IT A C H I'S double-poly N-channel H M 4 86 4 -2 , H M 4864-3
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HM4864P-2,
HM4864P-3
HM4864
536-words
HM4716
HM4864P2
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PDF
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m514256a
Abstract: No abstract text available
Text: HM514256A/AL Series 262,144-Word x 4-Bit CM O S Dynamic RAM • DESCRIPTION HM514256A/ALP Series The Hitachi HM 514256A/AL is a C M O S dynamic RAM organized 262,144-word x 4-bit. HM 514256A/AL has realized higher density, higher performance and various functions by employing 1.3 jj.m C M O S technology and some new C M O S circuit de
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HM514256A/AL
144-Word
HM514256A/ALP
14256A/AL
20-pin
m514256a
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Untitled
Abstract: No abstract text available
Text: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4000
44C4000-7
130ns
150ns
44C4000-6
100/jF
24-LEAD
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET pivr PMC-950449 ISSUE 6 1 PMC-Sierra, Inc. PM7344 s / u n i - m p h MULTI-PHY USER NETWORK INTERFACE FEATURES • Single chip quad ATM User Network Interface operating at 1.544 Mbit/s or 2.048 Mbit/s. • Im plements the ATM Forum User Network Interface Specification V3.1 for
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PMC-950449
PM7344
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PDF
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534256
Abstract: No abstract text available
Text: , ¿ 4 M 'à HY534256 1 H y u n d a i SEM ICONDUCTOR M181202A-APR91 FEATURES DESCRIPTION • Low power dissipation - Operating current, 100ns : 60mA max. - TTL standby current : 2mA(max.) -CM OS standby current : 1mA(max.) • Read-Modify-Write capability
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HY534256
M181202A-APR91
100ns
HY534256
534256
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M1116
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 42 440 0 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n The /iPD424400 is a 1,048,576 w ords by 4 bits CMOS dynamic RAM. The fast page mode capability realizes high speed access and low power consumption.
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uPD424400
26-pin
1PD424400-80
M1116
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yx 801 led driver
Abstract: yx 801 yx 801 led KM41C16000-6 KM41C16000-7 KM41C1 60n6 samsung DRAM layout
Text: CMOS DRAM KM41C160Q0 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Perform ance range: tR A C tC A C tRC 60n6 1 5ns 1 10ns K M 4 1 C 1 6 0 0 0 -7 70ns 20ns 1 3 0ns KM41 C 1 6 0 0 0 -8 8 0 ns 2 0 ns 1 5 0 ns K M 4 1 C 1 6 0 0 0 -6
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KM41C160Q0
16MX1
KM41C16000-6
110ns
KM41C16000-7
130ns
C16000-8
cycles/64ms
KM41C16000
216X1
yx 801 led driver
yx 801
yx 801 led
KM41C1
60n6
samsung DRAM layout
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PDF
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2118 intel
Abstract: Intel 2118 2118 dynamic ram intel 2118 FAMILY tcp 8111 2118 ram S6447 2118-15 S6331 2118-10
Text: intei 2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM 2118-10 2118-12 Maximum Access Time ns 100 120 150 Read, Write Cycle (ns) 235 270 320 Read-Modify-Write Cycle (ns) 285 320 410 Single +5V Supply, ±10% Tolerance CAS Controlled Output is Three-State, TTL Compatible
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424260-70
Abstract: 424260-80 42S4260 JPD42S4260-70 424260-70 nec japan upd424260
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿ PD42S4260, 424260 are 262,144 words by 16 bits dynam ic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consum ption.
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uPD42S4260
uPD424260
16-BIT,
PD42S4260,
PD42S4260
44-pin
40-pin
/JPD42S4260-70,
/iPD42S4260-80,
VP15-207-2
424260-70
424260-80
42S4260
JPD42S4260-70
424260-70 nec japan
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KM44C1000BJ6
Abstract: KM44C1000BJ7 KM44C1000BJ KM44C1000BJ-7 KM44C1000BT KM44C1000BJ-6 KM44C1000BP-7 km44c1000b
Text: KM44C1000B / CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tiuc tcAc tflC 60ns 15ns 110ns KM44C1000B-7 70ns 20ns 130ns KM44C1000B-8 80ns 20ns 150ns KM44C1000B-6 • • • • • • • •
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KM44C1000B
KM44C1000B-6
KM44C1000B-7
KM44C1000B-8
110ns
130ns
150ns
KM44C1000B
20-LEAD
KM44C1000BJ6
KM44C1000BJ7
KM44C1000BJ
KM44C1000BJ-7
KM44C1000BT
KM44C1000BJ-6
KM44C1000BP-7
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT / / P D 42 S 18165 L , 4218165 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The jiP D 4 2S 18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page
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16-BIT,
uPD42S18165L
uPD4218165L
PD42S18165L
iPD42S18165L,
4218165L
50-pin
42-pin
//PD42S18165L-A60,
421B74
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d235S
Abstract: 1232S
Text: S ta n d a rd P r o d u c t ISSUE 5 PM I I PMC-Sierra, Inc. T# PM 7344 S/UNI-MPH SATURN QUAD T1/E1 MUL TI-PHY USER NETWORK INTERFACE PM7344 S/UNIMPH S/UNI-MPH SATURN USER Q U A D T1/E1 M U L T I - P H Y NETWORK INTERFACE I s s u e 5: A u g u s t , PMC-Sierra, Inc.
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PM7344
PMC-950449
PMC-940873
d235S
1232S
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