TCD Z Search Results

MS-026D

Abstract: as5sp128k32dq
Contextual Info: COTSPEM PEM COTS AS5SP128K36DQ AS5SP128K36DQ SSRAM SSRAM SSRAM AustinSemiconductor, Semiconductor,Inc. Inc. Austin Parameter Symbol Cycle Time tCYC Cycle Time tCYC Cycle Time tCYC Clock Access Time tCD Clock Access Time tCD Clock Access Time tCD Output Enable

tcd series

Abstract: TCD41E2A335M tcd41e2a United Chemi-Con TCD TCD41E1E TCD30E2E104M United CHEMI-CON
Contextual Info: TCD MULTIL AYER CERAMIC TCD Series Ⅲ Y5U Ceramic Ⅲ Radial Lead Ⅲ High CV Ⅲ ‫؀‬125؇C Maximum Temperature Actual Size The TCD series are radial lead ceramic capacitors from UCC/NCC. These capacitors have a very low ESR and impedance which makes these capacitors ideal for filtering switching power supplies and

United Chemi-Con TCD

Abstract: TCD41E1H685M tcd series TCD21E2A104M jis-c-0805 TCD41E2A335M United Chemi-Con catalogue United Chemi-Con series United Chemi-Con tcd series United Chemi-Con
Contextual Info: TCD MULTIL AYER CERAMIC TCD Series Ⅲ Y5U Ceramic Ⅲ Radial Lead Ⅲ High CV Ⅲ ‫؀‬125؇C Maximum Temperature Actual Size The TCD series are radial lead ceramic capacitors from UCC/NCC. These capacitors have a very low ESR and impedance which makes these capacitors ideal for filtering switching power supplies and

GemPC410-FD

Abstract: vogt "iso 7816-1" Sub-D 9-pol gempc410 ISO7816-kompatiblen
Contextual Info: Chipkartenleser und -schreiber TCD-410-FD-CHIP-R/W-RS232 Chipkarten-Schreib-/Lesegerät als PC-Einbaumodul Hervorragende Eigenschaften: GemCore Chipset Vom Marktführer im Bereich Chipkartentechnologie Bestens geeignet zum Einbau in den 3,5 Zoll-Laufwerksschacht des PC

Contextual Info: K7N403601M K7N401801M 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75

K7N401801M

Abstract: K7N403601M
Contextual Info: K7N403601M K7N401801M 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75

K7N401801M

Abstract: K7N403601M
Contextual Info: K7N403601M K7N401801M 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75

KM718V849

Abstract: KM736V749
Contextual Info: KM736V749 KM718V849 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75

Contextual Info: K7M403625M K7M401825M 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8

transistor w2d

Abstract: ADV748
Contextual Info: COTS PEM AS5SP1M18DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address

Contextual Info: K7M403625M K7M401825M 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8

Contextual Info: KM736V747 KM718V847 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8

Contextual Info: KM736V747 KM718V847 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8

KM718V849

Abstract: KM736V749
Contextual Info: KM736V749 KM718V849 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75

Contextual Info: KM736V747 KM718V847 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8

part no w2d 48

Contextual Info: SSRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax AS5SP128K36 Rev. 1.3 09/11 BURST CNTL. Address Registers Row Decode

Contextual Info: TO SH IBA _ TOSHIBA CCD LINEAR IMAGE SENSOR TCD 1502D CCD Charge Coupled Device TCD1 5 0 2 D The TCD1502D is a high sensitive and low dark current 5000 elements CCD image sensor. The sensor is designed for facsimile, imagescanner and

SSRAM

Abstract: AS5SP128K36
Contextual Info: SSRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax AS5SP128K36 Rev. 1.6 10/13 BURST CNTL. Address Registers Row Decode

Contextual Info: KM736V747 KM718V847 128Kx36 & 256KX18 Flow-Through N/RAM Document Tills 128Kx36 & 256Kx18-Bit Flow Through N/RAM™ Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Prelim inary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8

Contextual Info: KM736V747 KM718V847 128Kx36 & 256KX18 Flow-Through N/RAM Document Tills 128Kx36 & 256Kx18-Bit Flow Through N/RAM™ Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Prelim inary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8

transistor w2d

Contextual Info: COTS PEM AS5SP512K18DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode

Contextual Info: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0

transistor w2d

Abstract: transistor w2a 1050C 850C
Contextual Info: COTS PEM AS5SP512K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array

transistor w2d

Abstract: AS5SP128K36DQ
Contextual Info: COTS PEM AS5SP128K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array