alpha POTENTIOMETERS
Abstract: No abstract text available
Text: DIN Rail 2-Wire Temperature Transmitters with Integral Display DRA-TCI-2D Thermocouple Input Model DRA-RTI-2D RTD Input Model ߜ Isolated ߜ Linearized ߜ Field Rangeable ߜ 31⁄2 Digit Back-Lit Loop Powered Display Model DRA-TCI-2D is available for thermocouple types J, K, T, E, R, S
|
Original
|
PDF
|
Pt-100
DRN-PS-1000
DRN-PS-1000
alpha POTENTIOMETERS
|
RS-222C
Abstract: TCI antenna AM Broadcast antenna RS-222-C 515 TCI Antenna TCI 27mhz transmitter Antenna log periodic 528S-1 tci model 510
Text: MODELS 515,516&528 Short Wave Broadcast High Power Log-Periodic Antennas Model 528 Model 515/516 Because of seasonal and diurnal variations of the ionosphere, shortwave broadcasters have found it necessary to change frequencies at regular intervals. Frequency changes can be
|
Original
|
PDF
|
|
cardioid
Abstract: TCI multicoupler slot antenna TCI antenna tci model 510 tci antenna vswr Multicoupler TCI tci model 650 tci model 233
Text: MODEL 888 UHF Wideband Slot Antenna Patent No. 6,150,988 • Wideband: 470 MHz to 806 MHz* channels 14 to 69 * • Transmits two or more channels - including adjacent channels simultaneously • DTV compliant • High power rating • No differential group delay
|
Original
|
PDF
|
888B-270301©
cardioid
TCI multicoupler
slot antenna
TCI antenna
tci model 510
tci antenna vswr
Multicoupler TCI
tci model 650
tci model 233
|
TCI 651 antenna
Abstract: TCI antenna 651T-1-35 TCI balun AS-3791 tci model 650 650F-1-03 651T TCI antenna balun "2-30 mhz"
Text: SERIES 650 Tactical Antennas Model 650 Model 651 Model 653 The 650 series of tactical antennas is designed to provide the communicator with a group of antennas covering the full 2–30 MHz band to meet most tactical range requirements. The three basic designs, illustrated above, are all available in transportable
|
Original
|
PDF
|
650T-1-N
651T-1-N
653T-1-N
650F-1-N
651F-1-N
653F-1-N
TCI 651 antenna
TCI antenna
651T-1-35
TCI balun
AS-3791
tci model 650
650F-1-03
651T
TCI antenna balun
"2-30 mhz"
|
SFH2701
Abstract: No abstract text available
Text: 2008-12-04 High Speed PIN Photodiode Schnelle PIN-Fotodiode Version 1.0 SFH 2701 Features: Besondere Merkmale: • Especially suitable for applications from 400 nm to 1050 nm • Fast switching time within the specified wavelength • Ultra short decay time "slow tail"
|
Original
|
PDF
|
D-93055
SFH2701
|
intersil DATE CODE MARKING
Abstract: pin diagram details of CD4015 y2010 R4573 B TA3842 wafer fab control plan TA388* transistor ESD test plan ta5142 R4573
Text: Status of Document is: RELEASED Effective from: 07-AUG-2000 09:48:23 to Date Printed: 07-Aug-2000 10:33:38 Controlled Document QML QUALITY MANAGEMENT PLAN Title: QML QUALITY MANAGEMENT PLAN Specification Type: DOCS Specification Number :999015 Issue :24 Page :1 of 100
|
Original
|
PDF
|
07-AUG-2000
28-SEP-1995
03-NOV-1995
21-SEP-1995
28-SEP-1995
intersil DATE CODE MARKING
pin diagram details of CD4015
y2010
R4573 B
TA3842
wafer fab control plan
TA388* transistor
ESD test plan
ta5142
R4573
|
Untitled
Abstract: No abstract text available
Text: Schnelle PIN-Fotodiode High Speed PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 2332 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 350nm bis 780nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer
|
Original
|
PDF
|
350nm
780nm
|
405nm photodiode
Abstract: 780nm led 1 mw SFH2332 photodiode 650nm nep photodiode dvd cd GEOY6653 OHLY0598 405nm LED Q65110A6342 photodiode bluray
Text: Schnelle PIN-Fotodiode High Speed PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 2332 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 350nm bis 780nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer
|
Original
|
PDF
|
350nm
780nm
405nm photodiode
780nm led 1 mw
SFH2332
photodiode 650nm nep
photodiode dvd cd
GEOY6653
OHLY0598
405nm LED
Q65110A6342
photodiode bluray
|
SFH 2302
Abstract: No abstract text available
Text: Schnelle PIN-Fotodiode High Speed PIN-Photodiode Lead Pb Free Product - RoHS Compliant SFH 2302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 400nm bis 1050nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeit bei geringer
|
Original
|
PDF
|
400nm
1050nm
SFH 2302
|
350nm bis 700
Abstract: photodiode bluray
Text: Schnelle PIN-Fotodiode High Speed PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 2332 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 350nm bis 780nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer
|
Original
|
PDF
|
350nm
780nm
Q61150A6342
350nm bis 700
photodiode bluray
|
SFH 2302
Abstract: photodiode dvd cd Q65110A6343 GEOY6653 OHLY0598
Text: Schnelle PIN-Fotodiode High Speed PIN-Photodiode Lead Pb Free Product - RoHS Compliant SFH 2302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 400nm bis 1050nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeit bei geringer
|
Original
|
PDF
|
400nm
1050nm
SFH 2302
photodiode dvd cd
Q65110A6343
GEOY6653
OHLY0598
|
SFH 2302
Abstract: No abstract text available
Text: Schnelle PIN-Fotodiode High Speed PIN-Photodiode Lead Pb Free Product - RoHS Compliant SFH 2302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 400nm bis 1050nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeit bei geringer
|
Original
|
PDF
|
400nm
1050nm
SFH 2302
|
SFH2701
Abstract: photodiode 650nm nep GPLY7034 OHLA0687 OPTO 2701 400nm
Text: Schnelle PIN-Fotodiode High Speed PIN-Photodiode Lead Pb Free Product - RoHS Compliant SFH 2701 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 400nm bis 1050nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer
|
Original
|
PDF
|
400nm
1050nm
SFH2701
photodiode 650nm nep
GPLY7034
OHLA0687
OPTO 2701
400nm
|
SFH2701
Abstract: No abstract text available
Text: Schnelle PIN-Fotodiode High Speed PIN-Photodiode Lead Pb Free Product - RoHS Compliant SFH 2701 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 400nm bis 1050nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer
|
Original
|
PDF
|
400nm
1050nm
Q65110A2960
SFH2701
|
|
|
Untitled
Abstract: No abstract text available
Text: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features ▪ Four Independent Drivers ▪ Rad Hard: 300k Rad Si Total Dose ▪ Single +3.3 V Power Supply ▪ Three-state Outputs ▪ Common Driver Enable Control ▪ Minimum Output Differential Voltage: 2V
|
Original
|
PDF
|
HX422D
RS422
20MHz
HX422D
RS422
ADS-14201
|
197A807
Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)
|
Original
|
PDF
|
197A807
2x105
1x1012
5962R96891
28-Lead
28C256
AT28C256.
AS9000,
197A807
BAE Systems prom 32K x 8
fuse smd code N
WY smd transistor
BAE Systems
b050 TRANSISTOR
PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2
smd atmel
AT28C256 rad
smd transistor a4
|
prom 238A790
Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)
|
Original
|
PDF
|
238A790
2x105
1x1012
28-Lead
28C256
AT28C256.
AS9000,
prom 238A790
238A790
BAE Systems prom 32K x 8
AEFJANTXV1N4100-1-BAE/TR/BAE
ppi interface 1007
S/Stag Programmer Orbit
AS9000
unisite
BAE Systems
|
prom 238A790
Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
Text: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free
|
Original
|
PDF
|
238A790
28-Lead
2x105
1x1012
28C256
AT28C256.
AS9000,
x5040)
prom 238A790
AT28C256 rad
WY smd transistor
238A790
BAE Systems prom 32K x 8
VT101
Atmel PART DATE CODE
K109
AEFJANTXV1N4100-1-BAE/TR/BAE
|
AT28C256 rad
Abstract: 197a8 radiation hardened prom WY smd transistor
Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V Product Description Features Radiation Other • Fabricated with Bulk CMOS 0.8 µm Process • Read/Write Cycle Times ≤45 ns, (TC = -55°C to 125°C) • Total Dose Hardness through 2 × 105 rad(Si)
|
Original
|
PDF
|
5962R96891
197A807
28-Lead
28C256
AT28C256.
AS9000,
PUBS-01-B22-Q-011
MVA01-012
AT28C256 rad
197a8
radiation hardened prom
WY smd transistor
|
5962-07A05
Abstract: HX422D MIL-PRF38535 ES1V
Text: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V
|
Original
|
PDF
|
HX422D
RS422
20MHz
HX422D
RS422
22CFR
N61-0999-000-000
5962-07A05
MIL-PRF38535
ES1V
|
Untitled
Abstract: No abstract text available
Text: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V
|
Original
|
PDF
|
HX422D
RS422
20MHz
HX422D
RS422
22CFR
N61-0999-000-000
|
TC180G21
Abstract: single port ram TC180 TC180G TC160G AM 770 DENSITY TRANSMITTER Toshiba NAND 67 Bga tc8565 toshiba graphics tc183G
Text: TOSHIBA TC180 Series CMOS ASIC Family 3.0V/3.3V, 0.5nm1 The TC180 series increases system performance and device integration while reducing power. Benefits • True 3.0/3,3V 0.5 micron CMOS process with fast 230ps gate delays • Reduced power consumption makes lower cost plastic packag
|
OCR Scan
|
PDF
|
TC180
230ps
TC160G
TC180G21
single port ram
TC180G
AM 770 DENSITY TRANSMITTER
Toshiba NAND 67 Bga
tc8565
toshiba graphics
tc183G
|
transformer ct
Abstract: R3154 5w8r2 ScansU9X23
Text: S P E CI FI C A T I ON S MODEL OUTPUT POWER Continuous @ 1 kHz. re 0.05% T.H.D. Single Both Single Both 2 OHM OUTPUT CAPABILITY @ 1 kHz./ 0.05% T.H.D. Ch. Ch. Ch. Ch. 8 8 4 4 Ohm Ohm Ohm Ohm Single Ch. Both Ch. : AM1600 520 470 900 810 W W W W 1200 W 1100 W
|
OCR Scan
|
PDF
|
AM1600
62X/35
105dB
90kHz.
-20dB
20kHz.
O00uF/1OOV
transformer ct
R3154
5w8r2
ScansU9X23
|
Untitled
Abstract: No abstract text available
Text: RF Transformers Wideband 12.5 to 1800 Q 4 kHz to 1500 MHz FREQUENCY MHz a RATIO MODEL NO. A o — PRI • ) T1-1T-KK81 T1-6T-KK81 T2-1T-KK81 T2.5-6T-KK81 T3-1T-KK81 —O y —O SEC y V,_ — o o — T4-1-KK81 T4-6T-KK81 T5-1T-KK81 T8-1T-KK81 T13-1T-KK81
|
OCR Scan
|
PDF
|
T13-1T-KK81
T16-6T-KK81
|
