THERMAL Fuse m20
Abstract: QL6600 AA10 QL6250 QL6250-4PQ208C QL6250-4PS484C QL6250-4PT280C QL6325 QL6500 K25 4032
Text: Eclipse Family Data Sheet •••••• Combining Performance, Density, and Embedded RAM Device Highlights Flexible Programmable Logic • 0.25 µ, 5 layer metal CMOS process Programmable I/O • High performance: <3.2 ns Tco • Programmable slew rate control
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304-bit
THERMAL Fuse m20
QL6600
AA10
QL6250
QL6250-4PQ208C
QL6250-4PS484C
QL6250-4PT280C
QL6325
QL6500
K25 4032
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3841 9904
Abstract: 5053 resistor NCE 7190 DR 6236 078
Text: Section 1. Cyclone III Device Datasheet This section includes the following chapter: • Revision History Altera Corporation Chapter 1, DC and Switching Characteristics Refer to each chapter for its own specific revision history. For information on when each chapter was
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CIII52001-2
3841 9904
5053 resistor
NCE 7190
DR 6236 078
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tms 3878
Abstract: No abstract text available
Text: Section 1. Cyclone III Device Datasheet This section includes the following chapter: • Chapter 1, DC and Switching Characteristics Revision History Refer to each chapter for its own specific revision history. For information on when each chapter was updated, refer to the Chapter Revision Dates section, which appears
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CIII52001-2
tms 3878
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4046 PLL Designers Guide
Abstract: 8135 diode
Text: Section 1. Cyclone III Device Datasheet This section includes the following chapter: • Revision History Altera Corporation Chapter 1, Cyclone III Device Datasheet: DC and Switching Characteristics Refer to each chapter for its own specific revision history. For information on when each chapter was
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CIII52001-2
4046 PLL Designers Guide
8135 diode
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i7 3612
Abstract: No abstract text available
Text: 1. DC and Switching Characteristics CIII52001-2.2 Electrical Characteristics Operating Conditions When Cyclone III devices are implemented in a system, they are rated according to a set of defined parameters. To maintain the highest possible performance and
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CIII52001-2
i7 3612
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3841 9904
Abstract: cl 5403 din 7984 c 5296 Horizontal Output transistor, NCE 7190
Text: Cyclone III Device Handbook, Volume 1 Preliminary Information 101 Innovation Drive San Jose, CA 95134 www.altera.com CIII5V1-2.0 Copyright 2008 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos
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EP3C5E144
Abstract: transistor 3866 s din 7984 EP3C16Q240 8108 national instruments
Text: Cyclone III Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 www.altera.com CIII5V1-2.1 Copyright 2008 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other
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5252 F 1105 transistor
Abstract: max 8770 TMS 3617 fa 5571 AS 12308 c 5296 Horizontal Output transistor, transistor c 5936 circuit diagram EP3C25 pin guideline tms 3878
Text: Cyclone III Device Handbook, Volume 1 Preliminary Information 101 Innovation Drive San Jose, CA 95134 www.altera.com CIII5V1-2.0 Copyright 2008 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos
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EM641FT8
Abstract: EM641FT8V
Text: EM641FT8 Low Power, 512Kx8 SRAM Document Title 512K x8 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Nov. 20, 2007 Preliminary 0.1 0.1 Revision IDR Current from 1.5uA to 7uA Dec. 5, 2007 tOE from 25nsec to 30nsec with 55ns part
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EM641FT8
512Kx8
25nsec
30nsec
100ns
120ns
EM641FT8
EM641FT8V
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EM641FT8V
Abstract: No abstract text available
Text: EM641FT8V Series Low Power, 512Kx8 SRAM Document Title 512K x8 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Nov. 20, 2007 Preliminary 0.1 0.1 Revision IDR Current from 1.5uA to 7uA Dec. 5, 2007
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EM641FT8V
512Kx8
25nsec
30nsec
100ns
120ns
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EM641FT8T
Abstract: No abstract text available
Text: EM641FT8T Series Low Power, 512Kx8 SRAM Document Title 512K x8 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Nov. 20, 2007 Preliminary 0.1 0.1 Revision IDR Current from 1.5uA to 7uA Dec. 5, 2007
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EM641FT8T
512Kx8
25nsec
30nsec
100ns
120ns
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EM641FT8S
Abstract: EM641FT8S-55LF
Text: EM641FT8S Series Low Power, 512Kx8 SRAM Document Title 512K x8 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Nov. 20, 2007 Preliminary 0.1 0.1 Revision IDR Current from 1.5uA to 7uA Dec. 5, 2007
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EM641FT8S
512Kx8
25nsec
30nsec
100ns
120ns
EM641FT8S-55LF
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TCO 990
Abstract: TCO-999 TCO-973 tco-993 TCO-994 TCO-981 tco993 tco-97 tco 999 tco-570
Text: T C O -99 3, 9 9 4 0 .2 c c V ' J - X • « fi • /J'>3!iPKG (11.4 X9.6 X 2.0mm height m ax: f t ' i t 0.22cc) • t e iv 'A lit iW M m % TCO-994 TCO-993 u*ffl-ask 12.6 MHz, 12.8 MHz, 13 MHz, 14.4 MHz, 15.36 MHz 16.8 MHZ. 19.2 MHz, 19.44 MHz, 13.68 MHz,
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TCO-993,
TCO-993
TCO-994
kii//10
TCO-993]
TCO-994]
I-32L
TC0-980,
TCO-973,
TCO-991T
TCO 990
TCO-999
TCO-973
TCO-994
TCO-981
tco993
tco-97
tco 999
tco-570
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Untitled
Abstract: No abstract text available
Text: böE D BENCHMARÖ ^ICROELEC 137601^ 0001145 754 H B E N bq2003 BENCHMARQ Fast Charge IC Features General Description > Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2003 Fast Charge IC provides comprehensive fast charge control
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bq2003
bq2003
16-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY C Y 7C 374i UltraLogic 128-Macrocell Flash CPLD Features • • • • 128 macrocells in eight logic blocks 64 I/O pins 5 dedicated inputs including 4 clock pins In-System Reprogrammable ISR™ Flash technology — JTAG interface • Bus Hold capabilities on all l/Os and dedicated inputs
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128-Macrocell
84-pin
100-pin
CY7C373i
CY7C374i
FLASH370iâ
173SR
CY7C374i
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logic block diagram of cypress flash 370 device
Abstract: cypress flash 370 device SEM03 features cypress flash 370 7C371-2
Text: 7C373: Thursday, September 24,1992 .Revision: Monday,January4,1993 S7E D • 2 5 f l T L > t iE 00CH031 41E CYPRESS SEMICONDUCTOR ^ ^ s ts s s s 'Z ^ ^ i is m = ^ 'T'^' ci- PRELIMINARY Q Y PR ESS . • 128 macrocells in eight logic blocks
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7C373:
00CH031
22V10
CY7C374
FLASH370
logic block diagram of cypress flash 370 device
cypress flash 370 device
SEM03
features cypress flash 370
7C371-2
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Untitled
Abstract: No abstract text available
Text: 7C373: Thursday, September 24,1992 Revision: Monday, January 4,1993 I MAR 2 3 1983 CY7C374 p r e l im in a r y S jS ry p p F ^ q — . 11 •■■ • 128 macrocells in eight logic blocks • 64 I/O pins • 6 dedicated inputs including 4 dock pins • No hidden delays
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7C373:
CY7C374
84-pin
CY7C373
CY7C374
FLASH370
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CY7C335-50WMB
Abstract: C3359
Text: = # CY7C335 C YPRESS Universal Synchronous EPLD Features • 100-MHz output registered operation • Twelve I/O macrocells, each having: — Registered, three-state I/O pins — Input and output register clock se lect multiplexer — Feed back multiplexer
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14-controlled)
terms--32
10-ns
28-pin,
300-mil
CY7C335
100-MHz
28-Lead
300-Mil)
28-Pin
CY7C335-50WMB
C3359
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gal16v8a
Abstract: 20V8A gal 16v8 programming specification 20V8A25 16V8A XLXX
Text: Lattice Semiconductor GAL16V8A GAL20V8A Corporation m FE A TU R E S •HIGH PERFORMANCE ELsCMOS TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax = 62.5 MHz — 7 ns Maximum from Clock Input to Data Output — TTL Compatible 24 mA Outputs — UltraMOS III Advanced CMOS Technology
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GAL16V8A
GAL20V8A
16V8A
GAL16
20-pi
L16V8A
L20V8A
20V8A
gal 16v8 programming specification
20V8A25
XLXX
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AX2003
Abstract: A1v9
Text: 19-0371; R e v 1; 7/95 N iC d /N iM H B a tte r y F a s t-C h a rg e C o n tro lle rs The MAX2003/MAX2003A are fast-charge battery charg ers with conditioning for NiCd (nickel cadmium) or NiMH (nickel-metal hydride) rechargeable batteries. The MAX2003A has the same features as the MAX2003 with
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MAX2003/MAX2003A
MAX2003A
MAX2003
5fl7bb51
0D11305
AX2003
A1v9
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Untitled
Abstract: No abstract text available
Text: 10 RIBS LOCATION V A R IE S DEPENDING ON CKT. SIZES CKT n n n n n n n n n NOLEX LOGO X TUBE P A R T NO. 8 9 990- 0007. ON TH E L E F T HAND SIDE OF TUBE . RED ARROW INDICATION A S T CKT 6.30 WINDOW FACING OUTW ARDS - E - REF: ORIEN TATIO N OF P A R T IN TUBE
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UL94V-0,
PS-87831-027
SD-87833-010
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features cypress flash 370
Abstract: cypress flash 370 device cypress flash 370
Text: Revision: Monday, January 4,1993 57E D • 550=1^2 □ D D tlQ21 573 ■ CYP 07 CY7C373 C VPRESS SEMICONDUCTOR PRELIMINARY 7M CYPRESS SEMICONDUCTOR 64-Macrocell Flash PLD perform ance o f the 22V10 to high-density PLD s. Features • 64 m acrocells in four logic blocks
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CY7C373
84-pin
CY7C374
64-Macrocell
CY7C373
features cypress flash 370
cypress flash 370 device
cypress flash 370
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C1573
Abstract: C0043
Text: Revision: Tuesday, December 22,1992 MAR ut WL* C 2 3 I993 CY7C375 PRELIMINARY CYPRESS SEMICONDUCTOR 128-Macrocell FLASH PLD Features Functional Description • 128 macrocells in eight logic blocks • 128 I/O pins • 6 dedicated inputs including 4 clock pins
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CY7C375
128-Macrocell
160-pin
CY7C375
FLASH370
22V10
C1573
C0043
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Untitled
Abstract: No abstract text available
Text: □PM D PS4 1 2 8 8 P 128K X 8 C M O S SRAM M O D U LE •o DESCRIPTION: The DPS41288P-100, -120, -150, -170 is a one megabit Static Random Access Memory SRAM , complete with memory interface logic and on-board capacitors, organized as 128KX 8 bit. The DPS41288P is ideally suited for high
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DPS41288P-100,
128KX
DPS41288P
DPS41288P-100
100ns
DPS41288P-120
120ns
DPS41288P-150
150ns
DPS41288P-170
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