RSY160P05
Abstract: No abstract text available
Text: RSY160P05 Transistors 4V Drive Pch MOSFET RSY160P05 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TCPT (2) zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Same land pattern as CPT3 (D-PAK). (1) (3) zApplication Switching
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RSY160P05
RSY160P05
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RQW130N03
Abstract: rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130
Text: Product Catalog MOSFETs Discrete Semiconductors 2007-Dec. www.rohm.com ROHM MOSFETs In the society these days, MOSFET is getting rapidly popular as a key-device in many applications, such as mobile phones and automotive electronics. ROHM will keep developing new devices exactly following the
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2007-Dec.
50P5842E
RQW130N03
rqw200n03
sp8k10s
mosfet rqw 130
SP8K10
RQA200N03
mosfet rqa 130
RQW130
RQA130N03
RQW 130
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SP8M41
Abstract: RRS075P03 white 3528 LED SCR Inverter datasheet RSY200N05 rss065n06 SML-522MU 3528 pwm EEFL SP8M4
Text: RECOMMENDED DEVICES For Indicator For Inverter Circuit For LED Backlight Chip LEDs Schottky Barrier Diodes RSX101M-30㧔30V / 1A / PMDU㧕 RSX101VA-30㧔30V / 1A / TUMD2㧕 㧨High-brightness / High heat-radiation white LED㧪 㧖 Low V F & Low IR World's highest brightness is realized
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RSX101M-30
RSX101VA-30
RB491D
RSX101M-30
SML-521MD
SML-521MY
100mA
SML-522MU
SP8M41
RRS075P03
white 3528 LED
SCR Inverter datasheet
RSY200N05
rss065n06
SML-522MU
3528 pwm
EEFL
SP8M4
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MSM5432126A
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2L0052-17-Y1
MSM5432126A
MSM5432126A
072-Word
32-Bit
MSM5432126A128K
EDO32
5128ms
64525milSSOP
SSOP64-P-525-0
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MSM54V32126A
Abstract: SSOP64-P-525-0 64TSOP L1526
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2L0053-17-Y1
MSM54V32126A
MSM54V32126A
072-Word
32-Bit
MSM54V32126A128K
EDO32
5128ms
64525milSSOP
SSOP64-P-525-0
64TSOP
L1526
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AS4LC4M4F1-50JC
Abstract: AS4LC4M4F1-50JI AS4LC4M4F1-50TC AS4LC4M4F1-50TI AS4LC4M4F1-60JC AS4LC4M4F1-60JI AS4LC4M4F1-60TC
Text: May 2001 AS4LC4M4F1 4Mx4 CMOS DRAM Fast Page 3.3V Family Features • Refresh • Organization: 4,194,304 words × 4 bits • High speed - 2048 refresh cycles, 32 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh - 50/60 ns RAS access time
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24/26-pin
AS4LC4M4F1-50JC
AS4LC4M4F1-50JI
AS4LC4M4F1-50TC
AS4LC4M4F1-50TI
AS4LC4M4F1-60JC
AS4LC4M4F1-60JI
AS4LC4M4F1-60TC
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Untitled
Abstract: No abstract text available
Text: AS4C4M4E1 May 2001 4Mx4 CMOS DRAM EDO family Features • Organization: 4,194,304 words × 4 bits • High speed • TTL-compatible, three-state I/O • JEDEC standard package - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time
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24/26-pin
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Untitled
Abstract: No abstract text available
Text: May 2001 AS4LC4M4E1 4Mx4 CMOS DRAM EDO 3.3V Family Features • Refresh - 2048 refresh cycles, 32 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh • TTL-compatible, three-state I/O • JEDEC standard package - 300 mil, 24/26-pin SOJ
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24/26-pin
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4C4M4FOQ-50JC
Abstract: 4C4M4FOQ-50TC 4C4M4FOQ-60JC TSOP300
Text: March 2001 AS4C4M4FOQ AS4C4M4F1Q 5V 4M X 4 CMOS QuadCAS DRAM fastpage mode Features • Organization: 4,194,304 words x 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption
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28-pin
4C4M4FOQ-50JC
4C4M4FOQ-50TC
4C4M4FOQ-60JC
TSOP300
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AS4C4M4E1-60JC
Abstract: AS4C4M4E1-50JC AS4C4M4E1-50JI AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4M4E1-60JI AS4C4M4E1-60TC AS4C4M4E1-60TI
Text: AS4C4M4E1 May 2001 4Mx4 CMOS DRAM EDO family Features • Organization: 4,194,304 words × 4 bits • High speed • TTL-compatible, three-state I/O • JEDEC standard package - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time
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24/26-pin
AS4C4M4E1-60JC
AS4C4M4E1-50JC
AS4C4M4E1-50JI
AS4C4M4E1-50TC
AS4C4M4E1-50TI
AS4C4M4E1-60JI
AS4C4M4E1-60TC
AS4C4M4E1-60TI
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AS4LC4M4E1-60JC
Abstract: AS4LC4M4E1-50JC AS4LC4M4E1-50JI AS4LC4M4E1-50TC AS4LC4M4E1-50TI AS4LC4M4E1-60JI AS4LC4M4E1-60TC AS4LC4M4E1-60TI
Text: April 2001 AS4LC4M4E1 4Mx4 CMOS DRAM EDO 3.3V Family Features • Refresh - 2048 refresh cycles, 32 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh • TTL-compatible, three-state I/O • JEDEC standard package - 300 mil, 24/26-pin SOJ
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24/26-pin
AS4LC4M4E1-60JC
AS4LC4M4E1-50JC
AS4LC4M4E1-50JI
AS4LC4M4E1-50TC
AS4LC4M4E1-50TI
AS4LC4M4E1-60JI
AS4LC4M4E1-60TC
AS4LC4M4E1-60TI
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rg802
Abstract: RSA4 Register TG802 hdlc DS215 DS2155 DS26502 rcmf
Text: Maxim > App Notes > TELECOM Keywords: DS215, DS26502, BITS, T1, E1, J1, SCT Sep 24, 2004 APPLICATION NOTE 3360 DS2155 and DS26502 Software Comparison Abstract: This application note discusses the differences between the DS2155 T1/E1/J1 Single Chip Transceiver
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DS215,
DS26502,
DS2155
DS26502
T1/E1/J1/64KCC
T1/E1/J1/64kHz
rg802
RSA4
Register
TG802
hdlc
DS215
rcmf
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130mA
Abstract: No abstract text available
Text: G -LINK GLT441L08 512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE Oct 2001 Rev. 1.0 Features : Description : ∗ ∗ ∗ ∗ Fast access time and cycle time. Low power dissipation. ∗ ∗ ∗ ∗ CAS -Before-RAS Refresh, Hidden Refresh and Test Mode Capability.
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GLT441L08
cycles/16ms.
28-pin
400milSOJ/TSOP
GLT441L08
1024-cycle
T00mil
600mil)
130mA
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4C4M4EOQ-50JC
Abstract: 4C4M4EOQ-50TC 4C4M4EOQ-60JC 4C4M4EOQ-60TC AS4C4M4E1Q-50JC
Text: March 2001 AS4C4M4EOQ AS4C4M4E1Q 4M ✕ 4 CMOS QuadCAS DRAM EDO family Features • Organization: 4,194,304 words x 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption
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28-pin
24/26-pin
4C4M4EOQ-50JC
4C4M4EOQ-60JC
4C4M4EOQ-50TC
4C4M4EOQ-60TC
AS4C4M4E1Q-50JC
4C4M4EOQ-50JC
4C4M4EOQ-50TC
4C4M4EOQ-60JC
4C4M4EOQ-60TC
AS4C4M4E1Q-50JC
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AS4LC4M4E1-60JC
Abstract: AS4LC4M4E0-50JC AS4LC4M4E0-50JI AS4LC4M4E0-50TC AS4LC4M4E0-50TI AS4LC4M4E0-60JC AS4LC4M4E0-60JI
Text: March 2001 AS4LC4M4E0 AS4LC4M4E1 4Mx4 CMOS DRAM EDO Family Features • Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4LC4M4E0 - 2048 refresh cycles, 32 ms refresh interval for AS4LC4M4E1 - RAS-only or CAS-before-RAS refresh or self-refresh
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24/26-pin
NC/A11
AS4LC4M4E1-60JC
AS4LC4M4E0-50JC
AS4LC4M4E0-50JI
AS4LC4M4E0-50TC
AS4LC4M4E0-50TI
AS4LC4M4E0-60JC
AS4LC4M4E0-60JI
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Untitled
Abstract: No abstract text available
Text: G -LINK GLT440M04 1M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Apr. 2002 Rev. 2.2 Features : Description : ∗ ∗ ∗ ∗ The GLT440M04 is a high-performance CMOS dynamic random access memory containing 4,194,304 bits organized in a x4 configuration. The GLT440M04 offers page
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GLT440M04
GLT440M04
1024-cycle
-Onl08-15T
128Kx8
300mil
GLT44016-40J4
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Untitled
Abstract: No abstract text available
Text: January 2001 Advance Information AS4VC256K16EO 2.5V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh
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AS4VC256K16EO
40-pin
40/44-pin
I/O15
AS4VC256K16E0-45JC
AS4VC256K16EO-45TC
AS4VC256K16EO-60JC
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Untitled
Abstract: No abstract text available
Text: G -LINK GLT441L04 1M X 4 CMOS DYNAMIC RAM WITH FAST PAGE MODE Nov. 2001 Rev. 1.0 Features : Description : ∗ ∗ ∗ ∗ The GLT441L04 is a high-performance CMOS dynamic random access memory containing 4,194,304 bits organized in a x4 configuration. The GLT4161L04 has 10 row
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GLT441L04
GLT441L04
GLT4161L04
1024-cycle
300mil
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MSM5432126A
Abstract: No abstract text available
Text: Pr E2L0052-17-Y1 el im y 131,072-Word ¥ 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5432126A is a Graphics DRAM organized in a 131,072-word ¥ 32-bit configuration. The technology used to fabricate the MSM5432126A is OKI's CMOS silicon gate process
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E2L0052-17-Y1
072-Word
32-Bit
MSM5432126A
64-pin
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MSM54V32128
Abstract: No abstract text available
Text: Pr E2L0046-17-Y1 el im DESCRIPTION The MSM54V32126/8 is a new generation Graphics DRAM organized in a 131,072-word ¥ 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CMOS silicon gate process technology. The device operates with a single 3.3 V power supply.
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E2L0046-17-Y1
MSM54V32126/8
072-word
32-bit
32-bit
MSM54V32128
64-pin
SSOP64-P-525-0
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Untitled
Abstract: No abstract text available
Text: REV, I.OxND. DF CONTACTS -4.0 2.0 X No. o f Positions ± 0.2 2.0 X No. o f C o n tacts - 2-01.2 OPTIONAL TCpT •cpr If | H u_|_u | 1¡1 | | | 2.0 TtpT DATE RELEASED 07/28/02 1,1 REVISED 10/17/02 OJ s s l [ t l H [ t l [ t l [ t i [ t i ( 1 i [ t i [ t i
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20021017-0KF219A)
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TKF315
Abstract: TKF250 315M355 TMF400 TMF355 TUV1600 32M35-32M63 TC100M200 400M450 bs88 60 amp
Text: List Numbers and Dimensions i ’ t 1 ’v i TF 12 5 -2 0 0 A ra tin g Extended Motor Range 200M 250 & 200M 315t Rating Am p 125 160 200 List rvumDers F orordering purposes Dimensions m millimetres & inches A B D E F G H J M Fixing Centres TF125 mm 70 00 34 90
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25-200A
200M250
200M315Ã
TF125
TF160
TF200
200M250
TF200M250t
200M315
TF200M315t
TKF315
TKF250
315M355
TMF400
TMF355
TUV1600
32M35-32M63
TC100M200
400M450
bs88 60 amp
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512Kx1 DRAM
Abstract: No abstract text available
Text: HY51V4100B Series «HYUNDAI 4M X 1bit CMOS DRAM DESCRIPTION The HY51V4100B is the new generation and fast dynamic RAM organized 4,194,304x1-bit. The HY51V4100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V4100B
304x1-bit.
HY51V4100B
Schottk014
27J8S
50flfl
1AC10-10-MAY95
512Kx1 DRAM
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AN2426
Abstract: No abstract text available
Text: GM71C16100A LG Semicon Co.,Ltd. 16,777,216 W ORDS x I BIT CMOS DYNAMIC RAM Pin Configuration Description The GM 71C16100A is the new generation dynamic RAM organized 16,777,216 x 1 Bit. GM 71C16100A has realized higher density, higher performance and various functions by utilizing advanced CMOS
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GM71C16100A
71C16100A
GM71C16100A
8888M
AN2426
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