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    Abstract: IXTP60N10T 60N10T IXTA60N10T IXTP60N10
    Text: Preliminary Technical Information IXTA60N10T IXTP60N10T TrenchMVTM Power MOSFET RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VGSM Transient


    Original     		PDF IXTA60N10T IXTP60N10T O-263 O-220) O-220 O-263 O-220 60N10T td 130 62706 f IXTP60N10T 60N10T IXTP60N10