Untitled
Abstract: No abstract text available
Text: SK10/100EL16TA-TD Differential Receiver PRELIMINARY HIGH-PERFORMANCE PRODUCTS Description Features The SK10/100EL16TA-TD are differential receivers with optional input/output terminations. The EL16TA-TD family is pin-to-pin compatible with SK10/100EL16W and
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SK10/100EL16TA-TD
SK10/100EL16TA-TD
EL16TA-TD
SK10/100EL16W
MC10/100EL16
MC10/100LVEL16,
EL16TA-TD
SK10/100EL16TA
wit100EL16TU
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1146 8-pin
Abstract: No abstract text available
Text: SK10/100EL16TA-TD Differential Receiver PRELIMINARY HIGH-PERFORMANCE PRODUCTS Description Features The SK10/100EL16TA-TD are differential receivers with optional input/output terminations. The EL16TA-TD family is pin-to-pin compatible with SK10/100EL16W and
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SK10/100EL16TA-TD
SK10/100EL16TA-TD
EL16TA-TD
SK10/100EL16W
MC10/100EL16
MC10/100LVEL16,
EL16TA-TD
SK10/100EL16TA
1146 8-pin
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TD-SCDMA
Abstract: No abstract text available
Text: PHS/TD-SCDMA Dual-band Combiner The content of this specification may change without notification 9/01/09 PHS/TD-SCDMA Dual-band Combiner ►Applications ● PHS/TD-SCDMA In-building Wireless System ►Features ● High “Q”, Low Insertion Loss -1.0dB typical
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-90dB
1900-1920MHz
2010-2025MHz
TD-SCDMA
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TD-SCDMA
Abstract: 100w gsm 1900 POWER TECHNOLOGY COMPONENTS
Text: GSM/TD-SCDMA Dual-band Combiner The content of this specification may change without notification 9/01/09 GSM/TD-SCDMA Dual-band Combiner ►Applications ● GSM/TD-SCDMA In-building Wireless System ►Features ● High “Q”, Low Insertion Loss -1.0dB typical
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-90dB
890-960MHz
2010-2025MHz
1900-1920MHz
TD-SCDMA
100w
gsm 1900
POWER TECHNOLOGY COMPONENTS
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TD 915
Abstract: 2025
Text: GSM/CDMA/PHS/WCDMA/TD-SCDMA Five-band Combiner The content of this specification may change without notification 9/01/09 GSM/CDMA/PHS/WCDMA/TD-SCDMA Five-band Combiner POI ►Applications ● GSM, CDMA, PHS,WCDMA and TD-SCDMA, etc. Multi-System Combining Platform(POI)
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TDA475K06CB
Abstract: TDA335K06CB TDA685K06CB TDB106K06CB TDE-226 TDK107 476 capacitor 10 k cap 104 TDE156 TD 42 F
Text: Sharma Tantalum Capacitors RoHS Compliant TD SERIES INTRODUCTION The TD Series, due to its good electrical characteristics, is recommended for professional and industrial applications. The extremely stable oxide layer of the TD solid tantalum capacitor allows only a very low leakage current even after long storage. The
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TDE156K16CB
TDA105K35CB
TDF226K16CB
TDA155K35CB
TDF336K16CB
TDB225K35CB
TDJ476K16CB
TDC335K35CB
TDL686K16CB
TDE475K35CB
TDA475K06CB
TDA335K06CB
TDA685K06CB
TDB106K06CB
TDE-226
TDK107
476 capacitor 10 k
cap 104
TDE156
TD 42 F
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Untitled
Abstract: No abstract text available
Text: TD-SCDMA Base Station Filter The content of this specification may change without notification 9/01/09 TD-SCDMA Base Station Filter ►Applications ●TD-SCDMA ►Features ● High “Q”, Low Insertion Loss ● High Rejection at 4GHz-12.75GHz ● It is waterproof and has the lighting protection function
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4GHz-12
75GHz
JXMBLB-T-T15-01-C
2010-2025MHz
1-1365MHz
1365-1914MHz
1914-1962MHz
1962-1990MHz
1990-1994MHz
2045-2110MHz
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13.5MHZ RFID Reader
Abstract: LT5575 LT5570 QFN 9X9 LT5579 Wideband Mixer upconverting and downconverting lw100815ku lt5538 QFN32 5X5 GND AA 14-Bit 160MSPS SAR ADC
Text: VOL 3 Wireless & RF Solutions High Performance Analog ICs Linear Technology offers some of the highest performance RF and signal chain solutions for wireless and cellular infrastructure. These products support worldwide standards LTE, WiMAX, GSM, W-CDMA, TD-SCDMA, CDMA, CDMA2000, etc. Other wireless systems
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CDMA2000,
1-800-4-LINEAR
LW100815KU
13.5MHZ RFID Reader
LT5575
LT5570
QFN 9X9
LT5579
Wideband Mixer upconverting and downconverting
lw100815ku
lt5538
QFN32 5X5 GND AA
14-Bit 160MSPS SAR ADC
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CDMA
Abstract: change WCDMA to CDMA
Text: GSM/CDMA/PHS/WCDMA/WLAN Five-band Combiner POI The content of this specification may change without notification 9/01/09 GSM/CDMA/PHS/WCDMA/WLAN Five-band Combiner(POI) ►Applications ● GSM, CDMA, PHS,WCDMA and TD-SCDMA, etc. Multi-System Combining Platform(POI), mainly applied in large
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1920-1980MHz
825-880MHz
890-960MHz
1900-1910requency
1900-1910MHz
825-960MHz
CDMA
change WCDMA to CDMA
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arm cortex a9
Abstract: data flow model of arm processor "ARM Cortex A9" cortex A9 CEVA-X1641 ARM JTAG cortex a9 m84xxx CPRI LTE baseband chip base station lte
Text: > Product Overview The leading solution for next-generation W-CDMA, WiMAX and LTE wireless base stations Mindspeed’s Transcede 4000/4020 delivers complete Layer 1 and Layer 2 functionality with the performance needed to support base stations ranging in size from macrocells to picocells and the flexibility to support HSPA+, TD-SCDMA,
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M84xxx
84xxx-BRF-001-C
arm cortex a9
data flow model of arm processor
"ARM Cortex A9"
cortex A9
CEVA-X1641
ARM JTAG cortex a9
CPRI
LTE baseband chip
base station lte
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Untitled
Abstract: No abstract text available
Text: PD - 94939A IRG4BC20SDPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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4939A
IRG4BC20SDPbF
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter parameter
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4938A
IRG4BC30FDPbF
20kHz
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD -94908A IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode
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-94908A
IRG4BC20MDPbF
10kHz
O-220AB
10kHz)
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Untitled
Abstract: No abstract text available
Text: PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter parameter
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4938A
IRG4BC30FDPbF
20kHz
O-220AB
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035H
Abstract: IRFPE30
Text: PD - 94911 IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4PC40FDPbF
O-247AC
IRFPE30
035H
IRFPE30
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035H
Abstract: IRFPE30 IRG4PC40
Text: PD - 94911 IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4PC40FDPbF
O-247AC
IRFPE30
035H
IRFPE30
IRG4PC40
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Untitled
Abstract: No abstract text available
Text: PD -94915 IRG4IBC20FDPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • • • • Very Low 1.66V votage drop 2.5kV, 60s insulation voltage
4.8 mm creapage distance to heatsink Fast: Optimized for medium operating
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IRG4IBC20FDPbF
O-220
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Untitled
Abstract: No abstract text available
Text: PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4BC10KDPbF
O-220AB.
O-220AB
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IRG4BC10SDPBF
Abstract: No abstract text available
Text: PD -94904A IRG4BC10SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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-94904A
IRG4BC10SDPbF
O-220AB
IRG4BC10SDPBF
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Untitled
Abstract: No abstract text available
Text: PD -94915 IRG4IBC20FDPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • • • • Very Low 1.66V votage drop 2.5kV, 60s insulation voltage
4.8 mm creapage distance to heatsink Fast: Optimized for medium operating
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IRG4IBC20FDPbF
O-220
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PE-047SR
Abstract: PE44438 PE-SR047AL PE-SR047FL TD 949
Text: MATERIALS BODY CONTACT INSULATOR STAINLESS STEEL GOLD PLATED GOLD PLATED PTFE -.232 ,0930 4 HOLES MOUNTING HOLES PASTERNACK ENTERPRISES, INC. P.O BOX 16759, IRVINE, CA 92623 PHONE (949) 261-1920 FAX (949) 261-7451 ASSEMBLY PROCEDURES , 100 1. STRIP CABLE TD DIMENSION
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PE44438
PE-047SR,
PE-SR047AL
PE-SR047FL
PE-047SR
PE44438
PE-SR047AL
PE-SR047FL
TD 949
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PE-047FL
Abstract: PE-047SR PE44441
Text: MATERIALS BODY CONTACT INSULATOR COUPLING NUT BRASS GOLD PLATED GOLD PLATED PTFE BRASS NICKEL PLATED .0800 PASTERNACK ENTERPRISES, INC. ASSEMBLY PROCEDURES , 100 1. STRIP CABLE TD DIMENSION SHOWN, DD NOT NICK CENTER CDNDUCTDR 8. DIELECTRIC, - -.075 STRIPPING DIMENSIONS
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PE44441
PE-047SR,
PE-SRQ47AL
PE-047FL
0307m
PE-047FL
PE-047SR
PE44441
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Untitled
Abstract: No abstract text available
Text: RED INDICATES ORIGINAL REVISIONS DESCRIPTION REV ECD REVISED; REDRAWN AND GENERAL A 13102 UPDATE; ADDED TOLERANCES; DRAWING NUMBER WAS 1000-0469; SEE ECD DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TD TROMPETER ELECTRONICS INC. AND SHALL NOT BE DISCLOSED, COPIED OR USED
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U/AD28
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PE4132
Abstract: No abstract text available
Text: BODY CONTACT INSULATOR MATERIALS BRASS NICKEL PLATED GOLD PLATED PTFE ASSEMBLY PROCEDURES 1. SLIDE CLAMP NUT CD, WASHER 2 & GASKET (3) OVER CABLE, STRIP CABLE AS SHOWN. DD NOT NICK BRAID WHILE CUTTING JAKET. TAPER END OF BRAID TD PERMIT ASSEMBLY OF BRAID CLAMP <4>,
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PE4132
rg213
rg214
PE4132
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