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    TDSON-8 MOSFET Search Results

    TDSON-8 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    TDSON-8 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BSC014N04LS

    Abstract: 014N04LS
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,40V BSC014N04LS DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET 40V BSC014N04LS 1Description TDSON-8FL enlargedsourceinterconnection


    Original     		BSC014N04LS BSC014N04LS J-STD20andJESD22 Halogen-freeaccordingtoIEC61249-2-21 014N04LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC080N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 8 mW • Optimized technology for DC/DC converters ID 53 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC080N03LS IEC61249-2-21 080N03LS PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,40V BSC014N04LS DataSheet Rev.2.2 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET 40V BSC014N04LS 1Description TDSON-8FL enlargedsourceinterconnection


    Original     		BSC014N04LS PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,40V BSC014N04LS DataSheet Rev.2.2 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET 40V BSC014N04LS 1Description TDSON-8FL enlargedsourceinterconnection


    Original     		BSC014N04LS BSC014N04LS Halogen-freeaccordingtoIEC61249-2-21 PDF

    Mosfet 080n03ls

    Abstract: GS-25-15 080N03LS BSC080N03LS IEC61249-2-21 JESD22
    Text: BSC080N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 8 mΩ • Optimized technology for DC/DC converters ID 53 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC080N03LS IEC61249-2-21 080N03LS Mosfet 080n03ls GS-25-15 080N03LS IEC61249-2-21 JESD22 PDF

    050N04LS

    Abstract: BSC050N04LS IEC61249-2-21 JESD22
    Text: BSC050N04LS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 5.0 mΩ • Optimized technology for DC/DC converters ID 85 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC050N04LS IEC61249-2-21 050N04LS 050N04LS IEC61249-2-21 JESD22 PDF

    017N04NS

    Abstract: IEC61249-2-21 JESD22
    Text: BSC017N04NS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 1.7 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC017N04NS IEC61249-2-21 017N04NS 017N04NS IEC61249-2-21 JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC016N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 1.6 mΩ ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC016N03LS IEC61249-2-21 016N03LS PDF

    027N04LS

    Abstract: BSC027N04LS G BSC027N04LS IEC61249-2-21 JESD22 BSC027N04
    Text: BSC027N04LS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 2.7 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC027N04LS IEC61249-2-21 027N04LS 027N04LS BSC027N04LS G IEC61249-2-21 JESD22 BSC027N04 PDF

    034N03LS

    Abstract: BSC034N03LSC IEC61249-2-21 JESD22 034n03l
    Text: BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 3.4 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC034N03LS IEC61249-2-21 BSC034N03LSC 034N03LS 034N03LS IEC61249-2-21 JESD22 034n03l PDF

    IEC61249-2-21

    Abstract: JESD22
    Text: BSC054N04NS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 5.4 mΩ • Optimized technology for DC/DC converters ID 81 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC054N04NS IEC61249-2-21 054N04NS IEC61249-2-21 JESD22 PDF

    BSC016N04LS

    Abstract: IEC61249-2-21 JESD22 016N04LS
    Text: BSC016N04LS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 1.6 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC016N04LS IEC61249-2-21 016N04LS IEC61249-2-21 JESD22 016N04LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC014N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 1.4 mΩ ID 100 A PG-TDSON-8


    Original     		BSC014N03LS IEC61249-2-21 014N03LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC018N04LS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 1.8 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC018N04LS IEC61249-2-21 018N04LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC027N04LS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 2.7 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC027N04LS IEC61249-2-21 027N04LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC019N04NS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 1.9 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC019N04NS IEC61249-2-21 019N04NS PDF

    093N04LS

    Abstract: BSC093N04LS BSC093N04LS G IEC61249-2-21 JESD22
    Text: BSC093N04LS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 9.3 mΩ • Optimized technology for DC/DC converters ID 49 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC093N04LS IEC61249-2-21 093N04LS 093N04LS BSC093N04LS G IEC61249-2-21 JESD22 PDF

    018N04LS

    Abstract: BSC018N04LS IEC61249-2-21 JESD22
    Text: BSC018N04LS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 1.8 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC018N04LS IEC61249-2-21 018N04LS 018N04LS IEC61249-2-21 JESD22 PDF

    016N03LS

    Abstract: Mosfet 016n03ls BSC016N03LS IEC61249-2-21 JESD22 bsc016n03l BSC016N03LS G BSC016N03LSG
    Text: BSC016N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 1.6 mΩ ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC016N03LS IEC61249-2-21 016N03LS 016N03LS Mosfet 016n03ls IEC61249-2-21 JESD22 bsc016n03l BSC016N03LS G BSC016N03LSG PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC030N04NS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 3.0 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC030N04NS IEC61249-2-21 030N04NS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC016N04LS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 1.6 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC016N04LS IEC61249-2-21 016N04LS PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC042N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 4.2 mW • Optimized technology for DC/DC converters ID 93 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		BSC042N03LS IEC61249-2-21 042N03LS PDF

    BSC030N04NS

    Abstract: IEC61249-2-21 JESD22 030N04NS
    Text: BSC030N04NS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 3.0 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC030N04NS IEC61249-2-21 030N04NS IEC61249-2-21 JESD22 030N04NS PDF

    019N04NS

    Abstract: IEC-61249-2-21 BSC019N04NS IEC61249-2-21 JESD22 019n04
    Text: BSC019N04NS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 1.9 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original     		BSC019N04NS IEC61249-2-21 019N04NS 019N04NS IEC-61249-2-21 IEC61249-2-21 JESD22 019n04 PDF