Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55BS8125J-10/12 PRELIMINARY 131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM with Input Registers and Output Registers Description The TC55BS8125J is a 1,048,576 bit synchronous static random access memory fabricated using BiCMOS technology and organized as 131,072 w ords by 8 bits. The TC55BS8125J is similar to the TC55BS8128J but has common data I/O lines and
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TC55BS8125J-10/12
TC55BS8125J
TC55BS8128J
TDT724fi
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC74VHC153F/FN/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC153F, TC74VHC153FN, TC74VHC153FS, TC74VHC153FT DUAL 4 -CHANNEL MULTIPLEXER The TC74VHC153 is an advanced high speed CMOS DUAL 4-CHANNEL MULTIPLEXERS fabricated with silicon gate
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TC74VHC153F/FN/FS/FT
TC74VHC153F,
TC74VHC153FN,
TC74VHC153FS,
TC74VHC153FT
TC74VHC153
16PIN
150mil
SOL16-P-15Q-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC518129AFWI-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power
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TC518129AFWI-10
TC518129AFWI
TC518129AFWI
D-121
D-122
D-123
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TO SH IBA TECHNICAL HEX D -TYPE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT T C 7 4 A C 1 74P/F/FN/FS DATA SILICON MONOLITHIC FLIP FLOP WITH CLEAR The TC74AC174 is an advanced high speed CMOS HEX DTYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.
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74P/F/FN/FS
TC74AC174
16PIN
200mil
S0P16
TC74AC174-
TDT724fi
TC74AC1
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