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    Micron Technology Inc MTFC16GLTDV-WT

    IC FLASH 128GBIT MMC 169VFBGA
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    DigiKey MTFC16GLTDV-WT Tray
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    Avnet Americas MTFC16GLTDV-WT Bulk 18 Weeks 1,000
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    Micron Technology Inc MTFC16GLTDV-WT-TR

    IC FLASH 128GBIT MMC 169VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTFC16GLTDV-WT-TR Reel 1,000
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    TDVW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS616LV2016 x8/x16 II-44 R0201-BS616LV2016

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns


    Original     		PDF BS62LV1600 115mA R0201-BS62LV1600 220uA 100uA 110uA

    123401

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29LV065U32SJ08-XX 32MB FLASH SIMM, based on AMD Am29LV065D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29LV065U32SJ08-XX is a Flash Memory SIMM, composed of four 64Mbit CMOS flash memories, each organized as 8M X 8 bits mounted on a substrate


    Original     		PDF AVEF29LV065U32SJ08-XX Am29LV065D AVEF29LV065U32SJ08-XX 64Mbit 80-pin 120ns 123401

    AS8S512K3

    Abstract: No abstract text available
    Text: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface


    Original     		PDF AS8S2M32PEC 2Mx32 M0-47AE AS8S2M32 AS8S2M32PEC AS8S512K3

    HIP-66

    Abstract: No abstract text available
    Text: FLASH AS8FLC1M32 FIGURE 1: PIN ASSIGNMENT Top View Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array Available via Applicable Specifications: • MIL-PRF-38534, Class H FEATURES • • • • • • • • • • • •


    Original     		PDF AS8FLC1M32 MIL-PRF-38534, 64Kbyte 1Mx32, AS8FLC1M32B HIP-66

    MICRON BGA PART MARKING

    Abstract: No abstract text available
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


    Original     		PDF AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG

    SMV512K32-SP

    Abstract: No abstract text available
    Text: SMV512K32-SP SLVSA21C – JUNE 2011 – REVISED OCTOBER 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


    Original     		PDF SMV512K32-SP SLVSA21C 16-Mb 20-ns 5e-17 SMV512K32-SP

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		PDF M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


    Original     		PDF Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13

    A29L008

    Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
    Text: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:


    Original     		PDF A29L008 KbyteX15 SA10 SA11 SA12 SA13 SA14 SA15 SA16

    MCR 100-6

    Abstract: IP82C52 MCR 100-6 P M82C52 80C86 82C52 CP82C52 CS82C52 IS82C52
    Text: 82C52 TM CMOS Serial Controller Interface March 1997 Features Description • • • • The Intersil 82C52 is a high performance programmable Universal Asynchronous Receiver/Transmitter UART and Baud Rate Generator (BRG) on a single chip. Utilizing the Intersil advanced Scaled SAJI IV CMOS process, the 82C52 will


    Original     		PDF 82C52 82C52 16MHz RS-232-C 8432Mgranted MCR 100-6 IP82C52 MCR 100-6 P M82C52 80C86 CP82C52 CS82C52 IS82C52

    a29040al-70

    Abstract: A29040A-55 A29040A A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064
    Text: A29040A Series 512K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current


    Original     		PDF A29040A a29040al-70 A29040A-55 A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064

    T-78

    Abstract: No abstract text available
    Text:                   ! "#$ %&' !* +"#$,%&',()!* -./01)2345 06781 ! 9:;<=>?@A78)!          


    Original     		PDF

    am29f400bb

    Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
    Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements


    Original     		PDF Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb am29f400bb v am29f400 known good AM29F400B7 20185 AM29F400BT

    NS41024S25

    Abstract: NS41024S25E-SMD PDM41024W 5962-8959837MMA
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S25-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S25 is a high performance, standard power version CMOS static RAM organized as


    Original     		PDF MDNS41024S25-X NS41024S25 NS41024 NS41024S25 NS41024S25E-SMD PDM41024W 5962-8959837MMA MIL-STD-883, MIL-STD-88341024 NS4A024 NS41024S25E-SMD PDM41024W 5962-8959837MMA

    NS41024S45

    Abstract: NS41024S45E-SMD PDM41024W
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S45-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S45 is a high performance, standard power version CMOS static RAM organized as


    Original     		PDF MDNS41024S45-X NS41024S45 NS41024 NS41024S45 NS41024S45E-SMD PDM41024W 5962-8959835MMA MIL-STD-883, MI41024 NS4A024 NS41024S45E-SMD PDM41024W

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    UC62LV4096

    Abstract: No abstract text available
    Text: Low Power CMOS SRAM 256K X 16 UC62LV4096 -55/-70 Description Features: • Vcc operation voltage : 1.5 V~ 3.6V • Low power consumption : 35mA Max. operating current 2uA (Typ.) CMOS standby current • High Speed Access time : 70ns (Max.) at Vcc = 1.5V


    Original     		PDF UC62LV4096 UC62LV4096 current21

    TE28F640J3C-120

    Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
    Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective


    Original     		PDF 28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead TE28F640J3C-120 TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability

    PSD813F2-90U

    Abstract: HATTELAND intel 80196 microcontroller WSI PSD 813 WSI PSD813F ZPSD813F1-90J 80C251 PSD813F PSD813F1 PSD813F2
    Text: PSD813F Family PSD813F ZPSD813F ZPSD813FV Flash In-System-Programmable Microcontroller Peripherals July, 2000 Preliminary 47280 Kato Road, Fremont, California 94538 Tel: 510-656-5400 Fax: 510-657-8495 800-TEAM-WSI 800-832-6974 Web Site: http://www.waferscale.com


    Original     		PDF PSD813F ZPSD813F ZPSD813FV 800-TEAM-WSI PSD813F2-90U HATTELAND intel 80196 microcontroller WSI PSD 813 WSI PSD813F ZPSD813F1-90J 80C251 PSD813F1 PSD813F2

    smd UJ

    Abstract: CDFP4-F28 GDIP1-T28 SMD MARKING CODE sdp
    Text: DATE DESCRIPTION LTR APPROVED YR-Ho-PA A A d d e d case ou t l i n e le t t e r U t o the drawing. Re m o v e d E S D S r e q u i r e m e n t s froit; drawing. E d i t o r i a l c h an ge s th roughout. 90 -0 1- 26 ' M. A. Frye B R e m o v e d "D e l a y to n e x t wr i t e " \tDVWL, t DV£L) test


    OCR Scan     		PDF BUL-103. MIL-BUL-103 00X07^ smd UJ CDFP4-F28 GDIP1-T28 SMD MARKING CODE sdp

    NCC equivalent

    Abstract: No abstract text available
    Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors


    OCR Scan     		PDF TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 8-Blf/262144 NCC equivalent

    s29f

    Abstract: No abstract text available
    Text: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '


    OCR Scan     		PDF TMS29F040 4194304-BIT 29LF040/ 29VF040 ComJS820A R-PDSO-G32) s29f