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    TE53N50E

    Abstract: te53N50 53N50E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet TE53N50E ISOTOP™ TM O S E -FE T ™ P o w er Field E ffe c t Tran sisto r M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate This new high ene rg y device a lso offers a d ra in -to -s o u rc e diode


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