C2162PX2
Abstract: transistor WT4 wt4 transistor Cambridge capacitor capacitors transistor WT5 52 WT2 pnp transistor transistor WT3 E16 CORE TRANSFORMER 6 pin DPSN sot23-6 CAMSEMI
Text: Basic C2160 Design Guide Primary Side Sensing Controller Rapidly Implement Application Circuits Up to 8 W Using CamSemi’s PSS Topology and Advanced Controller ICs C2161PX2 SOT23-6 C2162PX2 (SOT23-6) CamSemi’s PSS topology and advanced controller ICs deliver low cost solutions for flyback power supply
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C2160
C2161PX2
OT23-6)
C2162PX2
DG-3228-0908A
19-Aug-2009
C2162PX2
transistor WT4
wt4 transistor
Cambridge capacitor capacitors
transistor WT5 52
WT2 pnp transistor
transistor WT3
E16 CORE TRANSFORMER 6 pin
DPSN
sot23-6 CAMSEMI
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FTL3-2
Abstract: 8 bit modified booth multipliers S3C3410X 0xc01c IRM bed
Text: 22-S3-C3410X-062001 USER'S MANUAL S3C3410X 16-Bit CMOS Microcontrollers Revision 2 NOTIFICATION OF REVISIONS ORIGINATOR: Samsung Electronics, SOC Development Group, Ki-Heung, South Korea PRODUCT NAME: S3C3410X RISC Microcontroller DOCUMENT NAME: S3C3410X User's Manual, Revision 2
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22-S3-C3410X-062001
S3C3410X
16-Bit
S3C3410X
22-S3-C3410X-06-2001
FTL3-2
8 bit modified booth multipliers
0xc01c
IRM bed
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SPI-237
Abstract: 68HC708MP16 CPU08 M146805 M6805 M68HC05 M68HC08 MC68HC708MP16 Nippon capacitors
Text: General Release Specification A G R E E M E N T 68HC708MP16 R E Q U I R E D HC708MP16GRS/D REV. 2.0 CSIC System Design Group Austin, Texas N O N - D I S C L O S U R E February 17, 1997 A G R E E M E N T R E Q U I R E D General Release Specification N O N - D I S C L O S U R E
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68HC708MP16
HC708MP16GRS/D
SPI-237
68HC708MP16
CPU08
M146805
M6805
M68HC05
M68HC08
MC68HC708MP16
Nippon capacitors
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PDF
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R5F5631
Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f
Text: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D
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RX63N
RX631
100-MHz
32-bit
12-bit
R01DS0098EJ0100
PLQP0176KB-A
PLQP0144KA-A
R5F5631
R5F563NBDDFP
A083H
100-6 p86
A161H
ir127
capacitor PMR 202 DM
IPR200
c04f
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R5F61653RN50FPV
Abstract: Nippon capacitors ir receiver module sj 1838 P012 World transistors R5F61653RFPV R5F61654RFPV IFR 2945 SERVICE MANUAL sc 1287
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8SX/1658R
H8SX/1658M
REJ09B0413-0200
R5F61653RN50FPV
Nippon capacitors
ir receiver module sj 1838
P012
World transistors
R5F61653RFPV
R5F61654RFPV
IFR 2945 SERVICE MANUAL
sc 1287
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74HC
Abstract: DMP16 NJU3101 NJU3101D NJU3101M
Text: NJU3101 PRELIMINARY 4-BIT SINGLE CHIP TINY CONTROLLER • GENERAL DESCRIPTION The NJU3101 is the C-MOS 4-bit Single Chip Tiny Controller consisting of the 4-bit CPU Core, Input / Output Selectable I/O ports, Program ROM, Data RAM, and Oscillator Circuit CR or Ceramic or X'tal . It is packaged
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NJU3101
NJU3101
16-pin
74HC
DMP16
NJU3101D
NJU3101M
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Untitled
Abstract: No abstract text available
Text: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D
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RX64M
R01DS0173EJ0100
120-MHz
32-bit
512-KB
1588-compliant
12-bit
PLQP0176KB-A
PLQP0144KA-A
PLQP0100KB-A
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PDF
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R5F61668RFPV
Abstract: R5F61664RFPV R5F61668RN50FPV R5F61663RFPV A18E A1719 transistor NEC D 587 lsi tms 1951 nl 1117 3.3 DKC mark
Text: REJ09B0412-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 H8SX/1668R Group, H8SX/1668M Group
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REJ09B0412-0200
H8SX/1668R
H8SX/1668M
32-Bit
H8SX/1600
H8SX/1668R
H8SX/1664R
H8SX/1663R
H8SX/1668M
H8SX/1664M
R5F61668RFPV
R5F61664RFPV
R5F61668RN50FPV
R5F61663RFPV
A18E
A1719
transistor NEC D 587
lsi tms 1951 nl
1117 3.3
DKC mark
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LGA144
Abstract: XORB LGA-144 4435* mos A18E SR 2370R ic 555 block diagram 1041 p26 HD64F2378RVFQ marking 1052
Text: REJ09B0109-0600 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2378, H8S/2378R Group Hardware Manual
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REJ09B0109-0600
H8S/2378,
H8S/2378R
16-Bit
Family/H8S/2300
H8S/2378
H8S/2377
H8S/2375
H8S/2374
H8S/2373
LGA144
XORB
LGA-144
4435* mos
A18E
SR 2370R
ic 555 block diagram
1041 p26
HD64F2378RVFQ
marking 1052
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PDF
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touch-tone decoder
Abstract: No abstract text available
Text: Advance Information This document contains information on a new product. Specifications and information herein are subject to change without notice. A G R E E M E N T MC68HC708AS48 N O N - D I S C L O S U R E HC08 R E Q U I R E D Order this document by MC68HC708AS48/D
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MC68HC708AS48/D
MC68HC708AS48
MC68HC708AS48/D
touch-tone decoder
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PDF
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Untitled
Abstract: No abstract text available
Text: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D
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RX63N
RX631
R01DS0098EJ0100
100-MHz
32-bit
12-bit
PLQP0176KB-A
PLQP0144KA-A
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PDF
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s49e
Abstract: si4949
Text: SÌ4949EY VI^HWW Siliconix Dual Enhancement-Mode MOSFET N-/P-Channel Product Summary tedr DS(on) ( ^ ) Id (A) 0.055 @ V GS = 10 V ± 4 .5 0.075 @ V GS = 4.5 V ± 3 .9 0.053 @ V Gs = - 1 0 V ±5.1 0.095 @ V Gs = - 4 .5 V ±3.8 V d s (V ) N-Channel ,X xvv:v
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4949EY
S-49520--
ec-96
s49e
si4949
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PDF
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YTF640
Abstract: No abstract text available
Text: YTF640 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSII I N DUSTRIAL APPLICATIONS Unit in m m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1 0 .3 M AX. . ¡2 ¡3 .6 ± 0 .2 DRIVE APPLICATIONS. . L o w D r a i n - S o u r ce ON
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YTF640
250jiA
20kil)
00A/u
YTF640
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PDF
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Untitled
Abstract: No abstract text available
Text: PRODUCT CATTALO' N-CHANNEL ENHANCEMENT MOS 500V, 4.5A, 1.5Q SDF430 SDF430 SDF430 JAA JAB JDA FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS:J A A .JAB • L E A D BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE
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SDF430
B4B-4311
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PDF
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A37 diode
Abstract: No abstract text available
Text: ^»litron PRODUCT DEVICES.INC. Se^ SÌSSin"' “Esr -"°li£l'Ä?,ü,?KSI N-CHANNEL ENHANCEMENT MQS FET 800V , 1 . 6A , 7 . 8 0 ABSOLUTE MAXIMUM RATINGS PARAMETER UN IT S SYMBOL Drain- so ur ce Vo 1t . 1 Drain-Gate Voltage VDSS BOO Vdc (RGS=1.0Mo) (1)
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SDFE22
SDFE22
-25-c
REL10/93
A37-1
A37 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: Æ utran p r o d u c t g a t â l q q N-CHANNEL ENHANCEMENT MOS FET 'rLU.&f ABSOLUTE MAXIMUM RATINGS PARAMETER Drain- so ur ce Vo 1t . 1) Dr a in-Ga te Vo 1tage (R gs =1.0M o ) 6 0 0 V, UNITS SYMBOL (1) Gate-Source Voltage Con t inuous Drain Current Co ntinuous
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SDF17N60
MIL-S-1950-
IF-17A
i/dt-100A/
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PDF
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SED1180F
Abstract: SED1190F sed1180f5a SED1181F SED1181F5A sed1181 lcd sed1191f SED1191F SED1190 64x640
Text: SED 1180F/SED1181F CMOS DOT MATRIX HIGH DUTY LCD DRIVER • D ESCRIPTIO N T h e SED 1180F and SED1181F are L C D S e g m en t drivers w h ic h are used in co n ju n ctio n w ith the SED1190F and SED1191F LC D com m on drivers . T h e y c a n d rive a large dot-m atrix L C D d is p la y w ith a duty ratio of 1/64 or higher.
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SED1180F/SED1181F
SED1180F
SED1181F
SED1190F
SED1191F
64-bit
1/64-duty
SED1180Foa/SED1181Fob.
SED1180F5A/SED1181F5A
sed1180f5a
SED1181F5A
sed1181
lcd sed1191f
SED1191F
SED1190
64x640
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PDF
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peo 111
Abstract: 74HC NJU3102 NJU3102G NJU3102L
Text: NJU3102 PRELIMINARY 4-BIT SINGLE C H IP T IN Y CO NTRO LLER • PACKAGE OUTLINE GENERAL DESCRIPTION The NJU3102 is the C-M O S 4-bit Single Chip Tiny Controller consisted o f the 4-bit CPU Core, Input / O utput Selectable I/O ports, Program ROM, Data RAM, and
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NJU3102
NJU3102
22-pin
NJU3102L
NJU3102G
peo 111
74HC
NJU3102G
NJU3102L
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PDF
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IRF232
Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
Text: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re
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IRF220,
IRF221,
IRF222,
IRF223
08TAIN
50KSZ
IRF232
IRF220
IRF221
IRF222
IRF223
IRF230
IRF231
IRF233
varo diode
diode oa 90
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PDF
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CPV363M4F
Abstract: No abstract text available
Text: . . PD -5038 I Interna tion al i R Rectifier CPV363M4F preuminart IGBT SIP MODULE Fast IGBT Features • • • • Fully isolated printed circu it board m ou nt package S w itch in g-lo ss rating includes all "tail" losses HEXFRED so ft u ltra fa st diodes
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CPV363M4F
CPV363M4F
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.779 International S Rectifier IRGP440U INSULATED GATE BIPOLARTRANSISTOR UltraFastlGBT F e a tu re s • S w itch in g-lo ss rating includes all "tail" losses • O ptim ized for high operating frequency over 5kHz See Fig. 1 for C urrent vs. Frequency
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IRGP440U
-247A
O-247AC
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PDF
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Untitled
Abstract: No abstract text available
Text: Æ lltran PRO D UCT DEVICES.INC. 11 77 B L U E H E R O N BLVD. • R I V I E R A B E AC H, F L O R I D A 3 3 4 0 4 T E L : 4 0 7 8 4 8 - 4 3 1 1 • T L X : 5 1 - 3 4 3 5 • F A X : (407) 8 6 3 - 5 9 4 8 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS
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3bflb02
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PDF
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Untitled
Abstract: No abstract text available
Text: Æ iitron 3 3 0 1 E L E C T R O N IC S W A Y . TEL: 407 848-4311 PRODUCT DEVICES.INC. W E S T P A LM B E A C H , F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS PET 100V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1 t . ( 1 )
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300iiS,
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Untitled
Abstract: No abstract text available
Text: [PRODUCT ^litron CÂTÂLO' N-CHANNEL ENHANCEMENT MOS FET 6 0 V , 3 0 A , 0.04 0 ABSOLUTE MAXIMUM RATINGS SDF044 SDF044 PARAMETER JAA JAB FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS
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SDF044
MIL-S-19500
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PDF
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