Tekelec Temex
Abstract: Tekelec HP 8753 Tekelec diode WILTRON HP83620A
Text: RF & MICROWAVE MODULES Introduction Introduction TEKELEC TEMEX designs, develops and manufactures standard and custom IF, RF and microwave modules for military and professional applications. TEKELEC TEMEX has the engineering ressources and production capacity of a large company, as well as the flexibility to rapidly deliver small quantities
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3620A
8510B
8515S
Tekelec Temex
Tekelec
HP 8753
Tekelec diode
WILTRON
HP83620A
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Tekelec Temex
Abstract: Tekelec step recovery diodes
Text: MICROWAVE SILICON COMPONENTS Introduction INTRODUCTION This part of the Microwave section presents TEKELEC TEMEX’s product lines including: • receiving diodes • control diodes • tuning varactors • multiplier varactors • step recovery diodes •
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Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODES Microwave applications Attenuator silicon PIN diodes Description The table below presents a single set of values from the variety of customer options available for this series of passivated PIN diodes. TEKELEC TEMEX uses its proprietary technology, which enables the
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F0073
DH40141
DH40144
DH40225
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C82 diode
Abstract: tekelec diode bas32 501 CHB philips zener diode c18 philips zener diode c47 BAS32 sod80 d10/diode diode c82 DIODE C63
Text: Document reference: PCB reference: STEVAL-TDR007V1 Company: STMicroelectronics Index Quantity Reference C81 - C82 - C83 J1 R17 C7 - C34 - C42 - C58 C6 - C33 - C41 - C57 C5 - C32 - C40 - C56 - C78 - C79 C15 - C17 - C18 - C50 - C53 - C63 C38 - C46 - C67 - C71
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STEVAL-TDR007V1
CSC14BZV55C5V1
CSC59PD57002
CSC59PD57018
CSC59PD57060
610R0
PCIR106006
MVK50VC22MH63TP
293D475X9050D2T
GRH111
C82 diode
tekelec
diode bas32
501 CHB
philips zener diode c18
philips zener diode c47
BAS32 sod80
d10/diode
diode c82
DIODE C63
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DH80055-40
Abstract: Tekelec diode Tekelec Temex DH80052 DH80050-40 tekelec
Text: SILICON PIN DIODES Non magnetic square ceramic package 500 volts PIN diodes NON MAGNETIC SQUARE CERAMIC PACKAGE 500 VOLTS PIN DIODES Features Description • Non magnetic package • Low loss, low distortion • Low inductance • High reliability • Hermetically sealed package
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utH80050-40
DH80051-40
DH80052-40
DH80053-40
DH80054-40
DH80055-40
DH80055-40
Tekelec diode
Tekelec Temex
DH80052
DH80050-40
tekelec
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SQM1150
Abstract: SQM1450 Tekelec Temex SMD-4 sqm1250 Tekelec diode Tekelec Temex Components
Text: SILICON PIN DIODES Low cost square ceramic package PIN diodes LOW COST SQUARE CERAMIC PACKAGE PIN DIODES Features Description • Low loss, low distortion • Low inductance • High reliability • Hermetically sealed package • Non rolling MELF design •
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SQM1050
SQM1150
SQM1250
SQM1350
SQM1450
SQM1450
Tekelec Temex
SMD-4
Tekelec diode
Tekelec Temex Components
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AT27273
Abstract: DSA00344764 k3224 1206 cms diode cms capacitor gsm Booster 22 pf TEKELEC TEKELEC tekelec 630 VJ1206Y104KXAT
Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 12 W min. with 12 dB gain over 875 - 915 MHz • 10:1 LOAD VSWR CAPABILITY
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DB-915-12W
PD55015S
DB-915-12W
AT27273
DSA00344764
k3224
1206 cms diode
cms capacitor
gsm Booster
22 pf TEKELEC
TEKELEC
tekelec 630
VJ1206Y104KXAT
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TEKELEC 302
Abstract: Tekelec Temex
Text: SILICON PIN DIODES SOT23 surface mount switching silicon PIN diodes SOT23 SURFACE MOUNT SWITCHING SILICON PIN DIODES Features Description • Low series resistance • Low capacitance • Fast switching diodes • Surface mount package • Tape and reel packaging available
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DH50XXX
TEKELEC 302
Tekelec Temex
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transistor SMD 12W
Abstract: smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor transistor smd hq Tekelec TA smd transistor 12W 74
Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER
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DB-915-12W
PD55015S
DB-915-12W
transistor SMD 12W
smd transistor code 12w
smd transistor 12W 55
smd 501 transistor
smd transistor 12W
VJ1206Y104KXAT
12W smd transistor
transistor smd hq
Tekelec TA
smd transistor 12W 74
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VJ1206Y104KXAT
Abstract: 501-CHB-100-JVLE 501 CHB SPECIFICATIONS 3224W103 3224W-103 501-CHB CMS TANTALE 501chb100jvle 501 CHB AT27273
Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER
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DB-915-12W
PD55015S
DB-915-12W
VJ1206Y104KXAT
501-CHB-100-JVLE
501 CHB SPECIFICATIONS
3224W103
3224W-103
501-CHB
CMS TANTALE
501chb100jvle
501 CHB
AT27273
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VJ1206Y104KXAT
Abstract: AT27273 501-CHB-470-JVLE 500-CHA-101-JVLE 3224W-103 501 CHB vj1206y104kxa 100NF 63V 501chb100jvle 3224W103
Text: DB-960-60W 60W / 26V / 925-960 MHz PA using 1x PD57070S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 13 dB GAIN OVER 925 960 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER
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DB-960-60W
PD57070S
DB-960-60W
VJ1206Y104KXAT
AT27273
501-CHB-470-JVLE
500-CHA-101-JVLE
3224W-103
501 CHB
vj1206y104kxa
100NF 63V
501chb100jvle
3224W103
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9858A
Abstract: No abstract text available
Text: TEKELEC PRODUCTION AND QUALITY The basis of TEKELEC MICROWAVE Quality Assurance is MIL Q 9858, via its set of Quality Program Requirements. Beyond these written requirements, TEKELEC MICROWAVE conceives “quality" as satisfaction of the Custom er and the End-User of the Customer's services. To this end, the
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MIC32-1
1038/cond.
9858A
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Untitled
Abstract: No abstract text available
Text: TEKELEC COMPONENTS bflE D MË ^ 0 0 3 7 6 7 00GG231 PIN DIODES ••SMS ATTENUATING SILICON PIN DIODES CHIP AND PACKAGED WOOES I 1 The table below presents a single set of values from the variety of customer options available for this series of passivated PIN diodes. TEKELEC MICROWAVE uses Its proprietary technology, which enables
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00GG231
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Tekelec
Abstract: No abstract text available
Text: Bill TEKELEC MICROWAVE conceives, develops, manufactures and markets its own broad range of microwave components and devices for telecommunications, radar, scientific and industrial applications : • • • • • • microwave silicon semiconductor diodes
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SI-340
Abstract: No abstract text available
Text: DESIGN AID Unpacking chips from waffle-pack containers For maximum protection in transit, TEKELEC MICROWAVE regularly uses waffle-pack containers see figure 1 to hold product-bearing chips. TO AVOID DAMAGE OR LOSS when unpacking, proceed as follows. Opening the container
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JM SOT23
Abstract: 4C SOT23-4
Text: ATTENUATOR SILICON PIN DIODES The table below presents a single set of values from the variety of customer options available for this series of passivated PIN diodes. TEKELEC COMPONENTS uses Its proprietary technology, which enables the customer to Incorporate characteristics specific to the application involved, e.g. c a p a
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\0Q37
000Cm70
JM SOT23
4C SOT23-4
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tekelec
Abstract: No abstract text available
Text: I FK E I FC M IC . ’O U A V E This c a ta lo g presents TEKELEC MICROWAVE p ro d u c t lines including : • receiving diodes • control diodes • tuning varactors • m ultiplier varactors • step recovery diodes • high v o lta g e PIN a n d NIP diodes
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C1156
Abstract: No abstract text available
Text: bflE I> TEKELEC COMPONENTS • T G 0 3 7 Û 7 D D G D B M M 0T4 SILICON SCHOTTKY DIODES Q U A D SILICO N BEAM LEAD SCHOTTKY BARRIER DIODES Q uad silicon beam lead Schottky barrier diodes are available In star and ring configurations low drive level versions , principally for use In double balanced mixers. Their monolithic construction ensures close
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DH493
Abstract: 40144 DH-493 EH40144 DH40144
Text: PIN DIODES The ta b le b e lo w presents a single set o f values fro m th e v a rie ty o f c u s to m e r o p tio n s a v a ila b le fo r this series o f pa ssiva te d PIN diodes. TEKELEC MICROWAVE uses its p ro p rie ta ry te c h n o lo g y , w h ic h enab le s
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snap-off diode
Abstract: No abstract text available
Text: TEKELEC V u C R O w iw r PARAMETER MEASUREMENTS Measurement principle M easurem ent aims to characterise the le a kag e current in reverse vo lta g e conditions as specified. Diagram / 1 Voltage generator V Diode under a test DUT V ; vr Explanation The v o lta g e d ro p (a t the a m m e te r plugs used for m easurem ent o f le a ka g e current lR) must be negligible
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gold metal detectors
Abstract: Schottky diode wafer
Text: Schottky barrier diode technology Signal conditioning is the major application field for Schottky barrier d io d e s : speed switching, mixing, detecting, clipping and clamping. Frequency ranges from digital to m icrowave are supported. The outstanding characteristic of Schottky diode construction Is the barrier: a metal layer deposited
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TRIMMER capacitor 160 pF
Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Text: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e
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b3t72SM
100A101JP50
1N4007
BC337
BD135
TPV5055B
TRIMMER capacitor 160 pF
transistor BC337
TRIMMER capacitor 10-40 pf
22 pf trimmer capacitor
1n4007 mttf
linear amplifier 470-860
Zener diode 9.1
470-860 mhz Power amplifier 5 w
capacitor c3b
TPV5055B
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diode LT 1n4007
Abstract: transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 100A101JP50 3 pin TRIMMER capacitor 1n4007 mttf
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5055B The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR NPN SILICON . . . designed fo r o u tp u t stages in Band IV & V TV tra n s m itte r a m plifiers. Interna! m a tch
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5055B
BC337
BD135
1N4007
100A101JP50
diode LT 1n4007
transistor BC337
bc337 transistor
Zener diode 9.1
22 pf trimmer
100A1R3BP50
22 pf trimmer capacitor
3 pin TRIMMER capacitor
1n4007 mttf
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Untitled
Abstract: No abstract text available
Text: SILICON BEAM-LEAD SCHOTTKY MIXER DIODES, LOW BARRIER These diodes are glassed to reduce parasitic capacitance and strengthen the leads. The jf are offered In single or double diode configuration, C haracteristics at 25° C Test Conditions TYPE CASE 1 Single Double
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T0037
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