Untitled
Abstract: No abstract text available
Text: TST0922 SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0922
TST0922
D-74025
20-May-99
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SSOP16
Abstract: T0786 IF SSOP16
Text: T0786 1800-2200 MHz High Linearity SiGe Active Transmit Mixer Description The T0786 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 1800 to 2200 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the
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T0786
T0786
D-74025
15-Aug-01
SSOP16
IF SSOP16
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T4512
Abstract: TST0913 TST0913-TJQ TST0913-TJS
Text: TST0913 SiGe Power Amplifier for GSM 1800/1900 DCS/PCS Description The TST0913 is a monolithic integrated power amplifier. The device is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0913
TST0913
1800/1900-MHz
D-74025
29-Sep-00
T4512
TST0913-TJQ
TST0913-TJS
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0603 footprint
Abstract: ATMEL 910 Atmel 710 0603 capacitor terminal footprint rfp 540 LL1608-FSR10J SSO16 SSOP16 T0780 R3R40
Text: T0780 800-1000 MHz High Linearity SiGe Active Receive Mixer Description The T0780 is a high-linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 800 to 1000 MHz. It operates from a single 5 V supply and provides 10 dB of conversion gain while requiring only 0 dBm input to the
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T0780
T0780
D-74025
14-Aug-01
0603 footprint
ATMEL 910
Atmel 710
0603 capacitor terminal footprint
rfp 540
LL1608-FSR10J
SSO16
SSOP16
R3R40
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LL1608-FS12NJ
Abstract: SSOP16 T0787
Text: T0787 2300-2700 MHz High Linearity SiGe Active Transmit Mixer Description The T0787 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 2300 to 2700 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the
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T0787
T0787
D-74025
15-Aug-01
LL1608-FS12NJ
SSOP16
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Untitled
Abstract: No abstract text available
Text: T0786 1800-2200 MHz High Linearity SiGe Active Transmit Mixer Description The T0786 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 1800 to 2200 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the
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Original
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T0786
T0786
D-74025
14-Aug-01
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Untitled
Abstract: No abstract text available
Text: T0787 2300-2700 MHz High Linearity SiGe Active Transmit Mixer Description The T0787 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 2300 to 2700 MHz. It operates from a single 5 V supply and provides 9 dB of conversion gain while requiring only 0 dBm input to the
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T0787
T0787
D-74025
13-Aug-01
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rfp 540
Abstract: ATMEL 940 EHFFD1618
Text: T0785 800-1000 MHz High Linearity SiGe Active Transmit Mixer Description The T0785 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 800 to 1000 MHz. It operates from a single 5 V supply and provides 7.5 dB of conversion gain while requiring only 0 dBm input to the
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T0785
T0785
D-74025
13-Aug-01
rfp 540
ATMEL 940
EHFFD1618
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0603 footprint
Abstract: TOKO transformer t9 0603 capacitor terminal footprint "IF transformer"
Text: T0781 1700-2000 MHz High Linearity SiGe Active Receive Mixer Description The T0781 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 1700 - 2000 MHz. It operates from a single 5 V supply and provides 11 dB of conversion gain while requiring only 0 dBm input to the
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T0781
T0781
D-74025
14-Aug-01
0603 footprint
TOKO transformer t9
0603 capacitor terminal footprint
"IF transformer"
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ATMEL 740
Abstract: EHFFD1618 SMA 142-0701-851 ATMEL 940 142-0701-851 SSOP16 T0785 0603 footprint atmel 950
Text: T0785 800-1000 MHz High Linearity SiGe Active Transmit Mixer Description The T0785 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 800 to 1000 MHz. It operates from a single 5 V supply and provides 7.5 dB of conversion gain while requiring only 0 dBm input to the
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T0785
T0785
D-74025
15-Aug-01
ATMEL 740
EHFFD1618
SMA 142-0701-851
ATMEL 940
142-0701-851
SSOP16
0603 footprint
atmel 950
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TST0913
Abstract: TST0913-TJQ TST0913-TJS avx microcontrollers PSSOP-16
Text: TST0913 SiGe-Power Amplifier for GSM 1800/1900 DCS/PCS Description The TST0913 is a monolithic integrated power amplifier. The device is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0913
TST0913
1800/1900-MHz
D-74025
29-Sep-00
TST0913-TJQ
TST0913-TJS
avx microcontrollers
PSSOP-16
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Untitled
Abstract: No abstract text available
Text: T0782 2200-2700 MHz High Linearity SiGe Active Receive Mixer Description The T0782 is a high linearity active mixer which is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium technology. This mixer features a frequency range of 2200 to -2700 MHz. It operates from a single 5 V supply and provides 10 dB of
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T0782
T0782
D-74025
14-Aug-01
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AD149
Abstract: ad 149 valvo transistoren valvo OC 74 germanium transistor valvo oc 26 valvo transistor valvo transistoren germanium AD-149 valvo germanium
Text: AD 149 GERMANIUM - PNP - NF - LEISTUNGSTRANSISTOR Mechanische Da ten; Gehäuse: Metall, JEDEC T0-3 3 A 2 DIN 41 872 Der Kollektor ist mit dem Gehäuse leitend verbunden. Für isolierten Einbau können Gl immerscheibe Typ P und Isolier buchsen (Typ C) gelie
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-0t25
AD149
ad 149
valvo transistoren
valvo
OC 74 germanium transistor
valvo oc 26
valvo transistor
valvo transistoren germanium
AD-149
valvo germanium
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tunnel diodes
Abstract: germanium diode equivalent tunnel diode germanium TUNNEL DIODE germanium diode tunnel junction diode AEY16 AEY13 AEY15 germanium diode junction capacitance
Text: GERMANIUM T U N N EL DIODES AEYI3 AEYI5 AEYI6 TEN TA TIV E DATA Germanium tunnel diodes for use as low noise microwave am plifiers in S-band. QUICK REFERENCE DATA S-band f Operating frequency AEY13 AEY15 f min. r N s R esisitive cut-off frequency 6.0 8.0 Noise m easure
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AEY13
AEY15
AEY16
IB88331
AEY13-Page
tunnel diodes
germanium diode equivalent
tunnel diode
germanium TUNNEL DIODE
germanium diode
tunnel junction diode
AEY16
germanium diode junction capacitance
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germanium transistor pnp
Abstract: Germanium germanium pnp XAI02 pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
Text: MAZDA XAI02 R.F. TRANSISTOR Germanium PNP Junction Type _TEN TATIVE_ G EN ERA L The X A I0 2 is a pnp junction type tran sistor suitable fo r use as a frequency changer and/or oscillator on the medium and long wave bands. Th e elem ent of the tran sistor is herm e
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XAI02
germanium transistor pnp
Germanium
germanium pnp
pnp germanium transistor
germanium pnp transistor
siemens crt
EDISON
transistor germanium
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Germanium Power Devices
Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
Text: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)
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GAV30
GAV40
GAV100
GAV30
GAV100
MIL-I-45208.
Germanium Power Devices
germanium power devices corporation
Germanium Power Diodes
Photodiodes Germanium PIN
Germanium power
Germanium
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germanium power devices corporation
Abstract: Germanium Power Devices Germanium Power Diodes GAV30 GAV300 GAV60 MIL-45208 GAV100 TO46 germanium photodiode PIN
Text: GAV30 GAV60 GAV100 GAV300 OPTOELECTRONIC PRODUCTS Ge Avalanche Photodiodes •OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation • 3147375 DODDbSl ST 1 ■
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GAV30
GAV60
GAV100
GAV300
GAV60
germanium power devices corporation
Germanium Power Devices
Germanium Power Diodes
GAV300
MIL-45208
TO46
germanium photodiode PIN
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ac188k
Abstract: Transistor AC 188 ac188 AC 188 pnp transistor TO 1 valvo valvo transistoren valvo transistor AC 188 Transistor AC 188 k germanium transistor ac 188
Text: N ICH T FÜR N E U E N T W I C K L U N G E N GERMANIUM - P NP - NF - TRANSISTOR fUr Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit A C 18? E als komplementäres Paar Mechanische Daten: Gehäuse: Metall JEDEC TO-1 bzw. 1 A 3 nach D IN 41 871 in Ktthlklotz
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Untitled
Abstract: No abstract text available
Text: Tem ic TST0922 Semiconductors SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0922
TST0922
D-74025
25-Mar-99
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Untitled
Abstract: No abstract text available
Text: Tem ic TST0922 Semiconductors SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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TST0922
TST0922
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: Temic TST0922 S e m i c o n d u c t o r s SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium
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TST0922
TST0922
D-74025
25-Mar-99
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Untitled
Abstract: No abstract text available
Text: Tem ic TST0913 S e m i c o n d u c t o r s SiGe-Power Amplifier for GSM 1800/1900 DCS/PCS Description The TST0913 is a monolithic integrated power amplifier. The device is manufactured using TEMIC Semiconductors’ advanced Silicon-Germanium (SiGe) technology and has been designed for use in GSM
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OCR Scan
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TST0913
TST0913
1800/1900-MHz
D-74025
14-Apr-99
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Untitled
Abstract: No abstract text available
Text: Temic TST0912 S e m i c o n d u c t o r s SiGe Power Amplifier for GSM 900 Description The TST0912 is a monolithic integrated power amplifier IC. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium SiGe technology and has been designed for use in GSM 900-MHz mobile
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TST0912
TST0912
900-MHz
D-74025
01-Mar-99
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UL224D30
Abstract: UB880D radio fernsehen elektronik selen-gleichrichter L6516DG15 selengleichrichter L224D U6516dg bauelemente Kombinat D74LS999DK U6516D L6516DG15
Text: Typbezeichnung u nd K ennzeichnung von H alb le iterb a u e lem e n te n Dipl.-Ing. PETER H A N D R A C K Mitteilung aus dem V EB Kombinat Mikroelektronik Erfurt Ziel der Überarbeitung der TGL 38015 war es, sowohl die bei der A rbeit m it der beste henden Ausgabe gewonnenen Erfahrungen
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