Untitled
Abstract: No abstract text available
Text: TES Low ESR – QPL ESCC Low ESR Tantalum Chip Capacitor • QPL ESCC approved series • Manufactured in EU, ESA qualified plant, according to ESCC 3012 • Detailed specification 3012/004 • Low ESR designed parts, multianode D and E case included • Robust against higher thermo-mechanical stresses during assembly process
|
Original
|
PDF
|
470uF/6
J-STD-020.
120Hz,
|
Untitled
Abstract: No abstract text available
Text: TES Low ESR - EPPL 2 Low ESR Tantalum Chip Capacitor • EPPL 2 ESCC approved series • Manufactured in EU, ESA qualified plant, according to ESCC 3012 • Detailed specification 3012/004 • Low ESR designed parts, multianode D and E case included • Robust against higher thermo-mechanical stresses during assembly process
|
Original
|
PDF
|
470uF/6
J-STD-020.
120Hz,
|
tes 3012
Abstract: ESCC3012
Text: TES Low ESR - EPPL 2 Low ESR Tantalum Chip Capacitor • EPPL 2 ESCC approved series • Manufactured in EU, ESA qualified plant, according to ESCC 3012 • Detailed specification 3012/004 • Low ESR designed parts, multianode D and E case included • Robust against higher thermo-mechanical stresses during assembly process
|
Original
|
PDF
|
470uF/6
J-STD-020.
120Hz,
tes 3012
ESCC3012
|
TES 262
Abstract: capacitor 226 20V 476 capacitor 10 k e106050 B0035 tes 3012 E0065 D0055 TES 165 d0045
Text: TES Low ESR - EPPL 2 Low ESR Tantalum Chip Capacitor • EPPL 2 ESCC approved series • Manufactured in EU, ESA qualified plant, according to ESCC 3012 • Detailed specification 3012/004 • Low ESR designed parts, multianode D and E case included • Robust against higher thermo-mechanical stresses during assembly process
|
Original
|
PDF
|
470uF/6
J-STD-020.
120Hz,
TES 262
capacitor 226 20V
476 capacitor 10 k
e106050
B0035
tes 3012
E0065
D0055
TES 165
d0045
|
TSR 1-2450
Abstract: TMR 6-2411WI 12-0-12 transformer 500ma TRACOPOWER ten 5-1211 TEN 3-1213 TRACO POWER traco tma 1212d traco ten5 application note TSR 3-2450 tmr2e TEP-160
Text: Company Profile TRACO ELECTRONIC AG is a Swiss company with headquarter based in Zurich, Switzerland. As a leading power supply specialist with more than 30 years of experience we are dedicated to the design and manufacturing of high quality DC/DC and AC/DC
|
Original
|
PDF
|
|
TRACOPOWER ten 5-1211
Abstract: traco ten5 application note traco tma 1212d TRACO POWER TEL 3-0522 tracopower ESP 36-24SN TEL 5-2411 SMD MARKING CODE AH smd marking a60 ESP 18-05SN traco power 5-2423
Text: Company Profile TRACO ELECTRONIC AG is a Swiss company with headquarters based in Zurich, Switzerland. As a leading power supply specialist with more than 30 years of experience we are dedicated to the design and manufacturing of high quality DC/DC and AC/DC power conversion products. We are
|
Original
|
PDF
|
|
HRC5000
Abstract: No abstract text available
Text: Tantalum and Niobium Road Map Tantalum SMD Chip Standard TAJ Commercial TAJ Low Profile F93 F92 Low Profile F95 Conformal TAJ Automotive F93-AJ6 Professional TRJ F97 Low ESR TPS Low ESR Polymer TCJ TCM Multianode TCN Undertab TPM Ultra Low ESR F91 F38 TPS
|
Original
|
PDF
|
F93-AJ6
F72/F75
HRC5000
HRC6000
HRC5000
|
b626
Abstract: No abstract text available
Text: 2 4 6 7 REVISIONS ISS ZONE DESCRIPTION\PER REGUEST\DATE 5.5 — F F RECOMMENDED C A B L E S T R I P P I N G D I M ’S E E D D 1 HE C C N O TES FINISH PLATING THICKNESS IN MICRO-INCHES) 1 BRAS5 PER QQ- B—626 2 . BRASS PER GG- B—613 NICKEL P L 100 MIN, THICK OVER COPPER 5TRIKE
|
OCR Scan
|
PDF
|
B--626
B--613
B5210-7-50
B500QQ--5
B52QQ-2-A
B5000Q
b626
|
PAN 3501
Abstract: 740004 28X28
Text: 3 4 REVISIONS ISS DESCRIPTIONS^ ER REQUEST\DATE ZONE RECOMMENDED C A B L E S T R IP P IN G Dl CRIMPED FERRU LE HEX CRIMP SIZE .1 7 8 ” CRIMPED CONTACT PIN HEX CRIMP SIZE .0 6 8 ” MAX. PAN EL TH IC K N E S S = 3 .5 m m 6 HE N O TES 1 2 3 4 5 FINISH PLATING THICKNESS IN MICRO-INCHES
|
OCR Scan
|
PDF
|
QQ-B-626
QQ-B-613
QQ-B-750
--28X28
B6421E1-ND3G
B74000B74000DRAWING
PAN 3501
740004
28X28
|
Untitled
Abstract: No abstract text available
Text: 4 6 7 REVISIONS I5S D ESC RI PTI0 N\PER REQUEST\DATE ZONE RECOMMENDED CABDE STRIPPING D I M ’S RECOMMENDED 6 PE MOUNTING HOLE CD 'S 1.8 N O TES; 1. 2 3. +. 5, F IN IS H P L A T IN G T H IC K N E S S IN M IC R O - IN C H E S BRASS P ER Q Q - B - 6 2 6
|
OCR Scan
|
PDF
|
B74000-2
B6421
|
Untitled
Abstract: No abstract text available
Text: DIMENSIONS In m .M . DO NOT SCALE PRINT R E V IS IO N S p LTR D E S C R IP T IO N F1 n o tes 1. DATE E C R -0 8 -0 1 5 3 0 4 DWN 30-12-08 APVD AEG WRV : CONTACT IS DESIGNED FOR FLEXIBLE ETCHED CIRCUITS ACC. TO VDO-SPEC. M V -4 5 1 1 . T H IS PftR T N R . TO B E ORDERED WHEN TH E GERMAN X -Y APPLICATION
|
OCR Scan
|
PDF
|
|
STR 30120
Abstract: 223U
Text: 5 4 2 7 REVISIONS ISS ZONE DE5CRIPTI0N\PER REQUEST\DATE F RECOM M ENDED CABLE STR IP P IN G DIM ’S E D c N O TES: I . 2. 3 4. F IN IS H 'PLATIN G T H IC K N E S S IN M IC R O —IN C H E 5 BRASS PER Q Q - B - 6 2 6 N IC K E L P L. 1 0 0 M IN . THICh O V E R C O P P E R S T R IK E
|
OCR Scan
|
PDF
|
E6121A1-48
FME61
FME612
FME6121A1
--223U
STR 30120
223U
|
Untitled
Abstract: No abstract text available
Text: ISSI' IS 4 2 S 1 6 1 2 8 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION DECEMBER 1997 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as
|
OCR Scan
|
PDF
|
IS42S16128
131072-word
16-bit
IS42S16128
005-0B
|
Untitled
Abstract: No abstract text available
Text: IS 4 2 S 1 6 1 0 0 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JULY 1999 DESCRIPTION FEATURES C lock frequency: 1 6 6 ,1 4 3 , 125, 100 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated sim ultaneously and
|
OCR Scan
|
PDF
|
16-MBIT)
IS42S16100
288-word
16-bit
50-Pin
DR010-0B
IS42S16100
143MHz
124MHz
IS42S16100-6T
|
|
|
kje x6
Abstract: kje y4 KJE T5 256x16e KJE T3 kje y9 KJE T4 Y1 kje
Text: IS 42S 16128 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION MAY 1998 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's4M b Synchronous DRAM IS42S16128 is organized as
|
OCR Scan
|
PDF
|
400-mil
50-pin
IS42S16128
131072-word
16-bit
performanS42S16128
DR005-OC
IS42S16128
DR005-OC
kje x6
kje y4
KJE T5
256x16e
KJE T3
kje y9
KJE T4
Y1 kje
|
Untitled
Abstract: No abstract text available
Text: ISSI' IS 4 2 S 1 6 1 2 8 ADVANCE INFORMATION MAY 1998 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as
|
OCR Scan
|
PDF
|
IS42S16128
131072-word
16-bit
PK13197T2
|
Untitled
Abstract: No abstract text available
Text: IS 4 2 S 1 6 1 0 0 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM ISSI ADVANCE INFORMATION SEPTEMBER 1998 DESCRIPTION FEATURES Clock frequency: 100 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated simultaneously and
|
OCR Scan
|
PDF
|
16-MBIT)
IS42S16100
288-w
16-bit
50-Pin
Programm83
PK13197T2
T004404
|
A2XD
Abstract: Silicon Integrated System IS42S16128 kjg x6 0020665
Text: ISSI’ IS 4 2 S 1 6 1 2 8 _ 12ÔK Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION DECEMBER 1997 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply
|
OCR Scan
|
PDF
|
IS42S16128_
400-mil
50-pin
DR005-OB
A2XD
Silicon Integrated System
IS42S16128
kjg x6
0020665
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MT20D840 8 MEG x 40 DRAM MODULE I^ IC Z R O N DRAM _ MODULE 8 MEG x 40 DRAM FAST-PAGE-MODE PIN ASSIGNMENT Top View • • • • • Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% power supply
|
OCR Scan
|
PDF
|
MT20D840
72-pin
048-cycle
096-cycle
DE-21)
A0-A11
A0-A11,
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 1 4 MEG DRAM •MODULE 36, 8 MEG X 4 MEG X X MT12D436 18 DRAM MODULE 36, 8 MEG 18 X FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process • Low profile 1.00" height DM and DG packages only
|
OCR Scan
|
PDF
|
MT12D436
72-pin
048-cycle
A0-A10;
A0-A10
|
TMS3012
Abstract: TO100 package 8 bit shift register
Text: • ■ T M S 3012 JC, N C -D U A L 128-BIT ACCUMULATOR MOS LSI r TM S 3028 LC-DUAL 128-BIT SHIFT REGISTER ■n m features 03 30 c > • 256 bits of storage • Single clock phase n < • Static logic tO • T T L compatible • DC to 1 MHz operation • Push-pull output buffers
|
OCR Scan
|
PDF
|
128-bit
16-pin
16-ceramic
300-inch
O-100
TMS3012
TO100 package
8 bit shift register
|
tdq4-M
Abstract: HP 2231 IS42S16128
Text: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.
|
OCR Scan
|
PDF
|
131072-word
16-bit
50-pin
DR005-0A
tdq4-M
HP 2231
IS42S16128
|
M 50556
Abstract: 50556 act mx hf nu
Text: [Ordering number : EN5055A ~| CMOS LSI No. 5055A SAXYO L C 3 8 2 1 6 1 T - 1 7 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382I61T is a 3.3 V single-voltage power supply unit: mm synchronous D RAM s with a 65536-word x 16-bii x 2-
|
OCR Scan
|
PDF
|
LC382161T-17
LC382I61T
65536-word
16-bii
LC382161T
50-pin
M 50556
50556
act mx hf nu
|
V11J
Abstract: ba7k 500C LC382161T-17
Text: [Ordering number : EN5055A ~| CMOS LSI No. 5055A SAXYO L C 3 8 2 1 6 1 T - 1 7 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382I61T is a 3.3 V single-voltage power supply unit: mm synchronous D RAM s with a 65536-word x 16-bii x 2-
|
OCR Scan
|
PDF
|
LC382161T-17
LC382I61T
65536-word
16-bit
LC382161T
50-pin
V11J
ba7k
500C
LC382161T-17
|
