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    TESLA SEMICONDUCTOR Search Results

    TESLA SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TESLA SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CurveTracer CT-3100/3200 For High-Power Semiconductor Device Characterization DATA SHEET Emerging energy standards and increasing power consumption demand additional performance capabilities. As such, pressure has been placed on manufacturers to rapidly design, develop and characterize new power devices to develop innovative chipset designs to provide more eficiency.


    Original     		PDF CT-3100/3200 CT-DS-0212 CT3100/3200

    AN3525

    Abstract: magnetic flow meter MAGNETIC METER tesla coil MR2A16A 104Gauss tesla semiconductor
    Text: Freescale Semiconductor Application Note AN3525 Rev. 0, 11/2007 Impact of External Magnetic Fields on MRAM Products by: Jason Janesky Freescale Semiconductor Austin, TX 1 Introduction This application note discusses magnetic fields, the sources and magnitudes of magnetic fields, and their


    Original     		PDF AN3525 AN3525 magnetic flow meter MAGNETIC METER tesla coil MR2A16A 104Gauss tesla semiconductor

    ct scanner

    Abstract: .01 uf disc capacitor EUROFARAD capacitor datasheet EUROFARAD ceramic capacitor nova* kemet ceramic capacitor SSQ21113 murata Ceramic Disc Capacitors SCR SN 101 hv20 "x-ray generator"
    Text: Index Test Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 High Voltage/High Temperature Series . . . . . . . . . . . . . . . . . . . . . .5 High Temperature Ceramic Cases Series C3 . . . . . . . . . . . . . . . .6


    Original     		PDF

    INDUCTION

    Abstract: MAGNETIC METER magnetic transistor Tesla TESLA 1 07960
    Text: Magnetic Units Magnetic Induction vs. Magnetic Field Magnetic induction and magnetic field are often used synonymously. In many cases it is easy to conclude from magnetic induction to magnetic field and vice versa. The magnetic field H describes the field generated by a free current only, the magnetic


    Original     		PDF

    DIODE ON SEMICONDUCTOR B34

    Abstract: NCP1200 CROSS REFERENCE transformer bobbin sectional bobbin LLC N67 transformer core mosfet b38 EE 80 bobbin EI TRANSFORMER LIST EI type bobbin EE CORE
    Text: EBNCP1200/D How to Use the Spreadsheet NCP1200 Discont.xls" By Hector NG ON Semiconductor Singapore Application Engineer Email: hector.ng@onsemi.com http://onsemi.com ENGINEERING BULLETIN This short note describes the necessary steps to efficiently use the NCP1200 design aid file: “NCP1200 Discont.xls”.


    Original     		PDF EBNCP1200/D NCP1200 r14525 EBCNP1200/D DIODE ON SEMICONDUCTOR B34 NCP1200 CROSS REFERENCE transformer bobbin sectional bobbin LLC N67 transformer core mosfet b38 EE 80 bobbin EI TRANSFORMER LIST EI type bobbin EE CORE

    Ferroxcube 3C8

    Abstract: U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note
    Text: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive


    Original     		PDF U-127 UC3724/UC3725, Ferroxcube 3C8 U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note

    KF520

    Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
    Text: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5


    OCR Scan     		PDF 15Blatnà KF520 KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784

    Tesla

    Abstract: SBV525 RHY19 tesla semiconductor asco Q61708 tesla b 100
    Text: R H Y 19, SBV525 Hall probes for small air gaps Hall-effect device RHY 19 and SBV 525 are designed for magnetic field measure­ ments in extremely narrow air gaps semiconductor material InAs . Hall voltage leads: blue tubing; control current leads: red tubing.


    OCR Scan     		PDF RHY19, SBV525 RHY19 Q61708-Y19 Q64099-V Tesla SBV525 tesla semiconductor asco Q61708 tesla b 100

    Tesla

    Abstract: SV210 TESLA 110 SV230S SV230 YV20 tesla b 100
    Text: SV 210, SV 230 S Hall signal probes w ith vapour-deposited layer SV 210, SV 230 S are medium sensitivity Hall devices with a relatively small tem­ perature coefficient. Within the linear region they may be used as multipliers, outside in control and regulating circuits semiconductor material InAs - vapour-deposited


    OCR Scan     		PDF SV210, Q64021-S210 Q64021-S230 150mA V20-f SV210_ SV230S V10/B 500mA Tesla SV210 TESLA 110 SV230S SV230 YV20 tesla b 100

    SV110

    Abstract: Q64021 TESLA 110 S110S hall TESLA 3D Hall device
    Text: SV110 Hall signal probe w ith vapour-deposited layer S V 1 1 0 is a high sensitivity, high internal resistance Hall device for application in control and regulating circuits semiconductor material InSb — vapour-deposited layer . Terminals: Hall voltage red; control current green; wire length 100 mm.


    OCR Scan     		PDF SV110 SV110 -S110-S2 Q64021 -S110-S3 V20/B AV20/V20 TESLA 110 S110S hall TESLA 3D Hall device

    tangential

    Abstract: Tesla Q64003-T21
    Text: TC 21 Tangential probe TC 21 is a Hall effect device for measuring the tangential field intensity of magnetic materials semiconductor material InAs . Hall voltage leads: blue tubing; wire length: 120 mm. Control current leads: red tubing; tubing length: 100 mm.


    OCR Scan     		PDF Q64003-T21 tangential Tesla Q64003-T21

    SV130

    Abstract: 64021-S130-S3 Q64021-S130-S1 Q64021-S
    Text: S V 130 Not for new developm ent Hall signal probe with vapour-deposited layer SV 1 3 0 is a high sensitivity, high internal resistance Hall device, particularly for control and regulating applications semiconductor material InSb — vapour-deposited layer .


    OCR Scan     		PDF SV130 SV130 Q64021-S130-S1 Q64021-S130-S2 64021-S130-S3 64021-S130-S3 Q64021-S

    Tesla

    Abstract: SBV595 Hall 300 Q64099
    Text: SBV595 Hall field probe The field probe SBV 595 w ith an epitaxial semiconductor layer of GaAs is particularly suitable for precision measurements of magnetic fields. The cross-shaped Hall chip ensures a particularly small linearization error. •^electrical system


    OCR Scan     		PDF SBV595 SBV595 Q64099-V595 Tesla Hall 300 Q64099

    Q64001

    Abstract: FA22e EA218 f22e Hall 22e Q64001-F22E Tesla
    Text: EA218, FA 22e Insertion probe EA218, Field probe FA22e E A 218 and F A 2 2 e are Hall generators suitable for measuring AC and DC fields semiconductor material InAs . EA 218 Hall voltage leads: red/yellow, control current leads: green/violet (In mounting the top face (seat of electrode) must be insulated)


    OCR Scan     		PDF EA218, FA22e EA218 FA22e Q64001-E218 Q64001-F22E Q64001 f22e Hall 22e Q64001-F22E Tesla

    RHY17

    Abstract: RHY18 Q61708 tesla semiconductor Hall 300
    Text: R H Y17, RHY18 Low-temperature Hall probes RH Y 17 and R H Y 18 are Hall generators for measuring magnetic fields down to —2 6 9 °C. The flat and cylindrical respectively forms are suitable for universal and axial measurements (respectively). They find application in cryology, i.e. super­


    OCR Scan     		PDF RHY17, RHY18 RHY17 RHY18 Q61708-Y17 Q61708-Y18 OHY18 Q61708 tesla semiconductor Hall 300

    RHY10

    Abstract: RHY11 APP20 Q61708
    Text: R H Y 10, RHY11 Axial field probes RHY 10 and RHY 11 are Hall generators for measuring axiaf magnetic fields in smaller and larger respectively diameter bores (semiconductor material InAs). Hall voltage leads: blue tubing; control current leads: red tubing.


    OCR Scan     		PDF RHY10, RHY11 RHY10 Q61708-Y10 Q61708-Y11 RHY11 APP20 Q61708

    Hall Siemens sbv 525

    Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
    Text: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25


    OCR Scan     		PDF 023SbOS Q01b3 4099-V TCV20 Hall Siemens sbv 525 K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv

    magnetoresistor

    Abstract: No abstract text available
    Text: SÌE D • flaBSbOS DOlbS'te 1 MSIEfi M agnetoresistor FP 30 D 250 E - SIEMENS AKTIEN6ESELLSCHAF Features 0 ,5 î0 .i -Active area • InSb/NiSb semiconductor CuL 0 0 .0 8 • Flux concentrating iron substrate m • High sensitivity r m


    OCR Scan     		PDF fl235b05 magnetoresistor

    FC33

    Abstract: S290 Q64003-F FC34 Fc-34 FC32
    Text: FC 32, FC 33, FC34 Field probes FC 32, FC 33, and FC 34 are designed for high-precision measurements of magnetic fields. Temperature coefficients j8 are minimized semiconductor material InAsP . Type Order number FC 32 FC 33 FC 34 Q 640 03 -F 32 Q 640 03 -F 33


    OCR Scan     		PDF Q64003-F Q64003-F34 FC33 S290 FC34 Fc-34 FC32

    we381

    Abstract: magneto resistor
    Text: Infineon technologies FP 410 L 4 X 80 FM Double Differential Magneto Resistor Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage


    OCR Scan     		PDF Q65410-L80E Q65110-L80F flE35b05 013437b we381 magneto resistor

    siemens hall ferrite

    Abstract: No abstract text available
    Text: SIEMENS Magnetics 1.1 Magnetic units and definitions 1.1.1 Magnetic flux <I> The magnetic flux <1> results as a product of electric voltage and time. The S.l. unit of magnetic flux is the Weber Wb or the Volt-second (Vs). If the magnetic flux <J>changes


    OCR Scan     		PDF

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    SBV579

    Abstract: tesla semiconductor
    Text: SBV579 Hall field probe The field probe SBV 579 is only suited to measure DC magnetic fields. The Hall chip of cross-shaped design ensures a particularly small linearization error semi­ conductor material InAs . The electrical system is protected by a coat of varnish.


    OCR Scan     		PDF SBV579 Q64099-V579 1iO05 SBV579 tesla semiconductor

    SBV566

    Abstract: hall generator sbv 566 SBV570
    Text: SBV570 Hall signal probe The signal probe SB V 570 serves for contactless signal emission or position indication of magnets. Its design and dimensions are similar to those of SB V 566, however, it does not have a ferromagnetic cover and has no ferromagnetic substrate; i.e. there


    OCR Scan     		PDF SBV570 Q64099-V570 SBV566 hall generator sbv 566 SBV570