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    TEST TRANSISTORS Search Results

    TEST TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TEST TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Willamette

    Abstract: project transistor tester
    Text: Intel Technology Journal Q1’99 Defect-Based Test: A Key Enabler for Successful Migration to Structural Test Sanjay Sengupta, MPG Test Technology, Intel Corp. Sandip Kundu, MPG Test Technology, Intel Corp. Sreejit Chakravarty, MPG Test Technology, Intel Corp.


    Original     		PDF A4/T11 Willamette project transistor tester

    107D

    Abstract: No abstract text available
    Text: CHIP LED LAMPS GENERAL INFORMATION QUALITY CONTROL AND ASSURANCE Classification Endurance Test Environmental Test Test Item Reference Standard Test Conditions Operation Life MIL-STD-750 : 1026 MIL-STD-883 : 1005 JIS C 7021 : B-1 High Temperature High Humidity


    Original     		PDF MIL-STD-202 MIL-STD-883 JIS-C-7021 MIL-STD-750 107D

    Untitled

    Abstract: No abstract text available
    Text: TestStation LX In-Circuit Test System Highest Quality In-Circuit Test ½ Configurable from 256 to 7680 test pins ½ Capable of testing large, complex, and heavily integrated PCBs ½ Safe, accurate, and reliable electrical test with SafeTest™ Protection


    Original     		PDF AT-169-1004

    107D

    Abstract: HX2040
    Text: CHIP LED LAMPS GENERAL INFORMATION QUALITY CONTROL AND ASSURANCE Classification Endurance Test Environmental Test Test Item Reference Standard Test Conditions Result Operation Life MIL-STD-750 : 1026 MIL-STD-883 : 1005 JIS C 7021 : B-1 Connect with a power If = 20mA


    Original     		PDF MIL-STD-202 240hrs MIL-STD-883 000hrs JIS-C-7021 MIL-STD-750 60min 107D HX2040

    BU-2143-D-48-0

    Abstract: BU-2241-D-48-0 BU-65621 BU-00225-2 BU225 BU302 BU-656-2 002070 BU-00243-2 BU326
    Text: 118-2012:QuarkCatalogTempNew 8/14/12 7:34 AM Page 118 INTERCONNECT TEST & MEASUREMENT 1 Test Accessories and DMM Kits BU-26101 and BU-26106 Insulated Plug-On Test Prod with Stainless Steel Tip DMM Replacement Leads and Probes BU-2143-D-48 Variable Length Test Prods


    Original     		PDF BU-2143-D-48 BU-00285 BU-00286 BU-00287 BU-31602-0 BU-31602-2 BU-31603-0 BU-31603-2 BU-32603-0 BU-32603-2 BU-2143-D-48-0 BU-2241-D-48-0 BU-65621 BU-00225-2 BU225 BU302 BU-656-2 002070 BU-00243-2 BU326

    S5 100 B112 MT RELAY

    Abstract: konica IR sensor DVB-T Schematic set top box MIL-STD-291C Digital Panel Meter PM 428 S5 100 B112 RELAY DVB-C receiver schematic diagram service manual tv seg pacific
    Text: Test & Measurement Catalog 2015 Chapter Contents Page Company profile ❙❙ Our business fields and products 2 1 Aerospace and defense test solutions ❙❙ Radar test systems ❙❙ ILS test system 6 2 Wireless ­communications testers and systems ❙❙ Wireless device testers


    Original     		PDF ZV-Z170/-Z135/-Z129 ZN-Z15x S5 100 B112 MT RELAY konica IR sensor DVB-T Schematic set top box MIL-STD-291C Digital Panel Meter PM 428 S5 100 B112 RELAY DVB-C receiver schematic diagram service manual tv seg pacific

    Untitled

    Abstract: No abstract text available
    Text: AP1114 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)90ö V(BR)CBO (V)150 I(C) Max. (A)30 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF AP1114 Freq80M

    Untitled

    Abstract: No abstract text available
    Text: AP1112 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)90ö V(BR)CBO (V)120 I(C) Max. (A)50 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF AP1112 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: DTL3503 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF DTL3503 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: DTL3509 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF DTL3509 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: AP1111 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)100 I(C) Max. (A)60 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF AP1111 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: DTL3426 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)9 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF DTL3426 Freq40M

    Untitled

    Abstract: No abstract text available
    Text: BDY58A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF BDY58A

    2SC5147

    Abstract: No abstract text available
    Text: 2SC5147 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SC5147

    Untitled

    Abstract: No abstract text available
    Text: 2SC4937A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SC4937A

    Untitled

    Abstract: No abstract text available
    Text: SK3846 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)10 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF SK3846 Freq14MÃ

    Untitled

    Abstract: No abstract text available
    Text: 2SB1386 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SB1386

    Untitled

    Abstract: No abstract text available
    Text: AP1011 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)350ö V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF AP1011 Freq25M

    Untitled

    Abstract: No abstract text available
    Text: 2SD1897 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SD1897

    Untitled

    Abstract: No abstract text available
    Text: PT3691 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)70 I(C) Max. (A).50 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF PT3691

    Untitled

    Abstract: No abstract text available
    Text: SK3929 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF SK3929 Freq15M

    Untitled

    Abstract: No abstract text available
    Text: 2SD2396 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SD2396

    tunnel diode General Electric

    Abstract: tc4011bp
    Text: 1. Test Results A. Life Test Results Table 1 shows the life test results of B Series C2MOS IC. B Series is classified into SSI Family less than 100 transistors and MSI Family (More than transistors). Table 1 TEST TIME (hrs) EQUIVALENT NUMBER OF FAILURES


    OCR Scan     		PDF 83x106 tunnel diode General Electric tc4011bp

    TC4011BP equivalent

    Abstract: No abstract text available
    Text: 1. Test Results A. Life Test Results Table 1 shows the life test results of B Series C2M0S IC. B Series is classified into SSI Family less than 100 transistors and MSI Family (More than transistSfs). Table 1 B Series CJM0S (SSI Family) TYPE TEST ITEMS CONDITION


    OCR Scan     		PDF FP-14pins FP-16pins 20Hrs 15pins -14pins TC4011BP equivalent