la2786
Abstract: ua 741 un QQE03/20 NSP2 0407 2x55 telefunken ra 200 telefunken ra 200 amplifier 2X40 QQE03
Text: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung TELEFUNKEN DC-AC-Heating indirectly heated connected In parallel Doppel-Tetrode Twin-tetrode Doppel-Tetrode für HF-Verstärker bis 600 MHz und NF-Verslärker. Twin-tetrode for RF-amplifier and AF-amplifier.
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K 713
Abstract: amplificateur hf amplificateur BF 2X40 2x460
Text: P H ILIP S QBW 5/3500 TETRODE for use as H.P. amplifier, modulator or frequen cy multiplier TETRODE pour utilisation en amplificatrice H.P., modulatrice ou multiplicatrice de fréquence TETRODE zur Verwendung als HF-Verstärker, Modulator oder Frequenzvervielfacher
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7R51078
K 713
amplificateur hf
amplificateur BF
2X40
2x460
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W1A 93
Abstract: W1A 73 CONDENSATEUR PHILIPS HA-107
Text: PHILIPS QEP 20/18 TETRODE for use as pulse modulator in circuits with Induc tive or resistive load TETRODE pour utilisation en modulatrice d'impulsions dans circuits à charge inductive ou résistive TETRODE zur Verwendung als Impuls-liodulator in Stromkreisen
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QEP20/18
W1A 93
W1A 73
CONDENSATEUR PHILIPS
HA-107
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OB 3.5 750
Abstract: QB 3-300 qb 3.5/750 2x15 hp 1458 410 WG2 lp 9257 net185 PHILIPS HP LT 939
Text: PHILIPS QB 3.5/750 TETRODE for use as H.F. amplifier and oscillator TETRODE pour utilisation en amplificatrice H.P. et en oscillatrice TETRODE zur Verwendung als HF-Verstärker und Oszillator Cooling : radiation/low velocity air flow Refroidissement: radiation/léger courant d'air
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5/75G
OB 3.5 750
QB 3-300
qb 3.5/750
2x15
hp 1458
410 WG2
lp 9257
net185
PHILIPS HP
LT 939
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2X15W
Abstract: hct 500 2x55 marconi company marconi tube company 2X40 marconi 2X400
Text: TT20/JAN. 1958 Tetrode Type TT20 U H F A M PLIFIER 46 MAX General. The TT20 is a double tetrode suitable for use as an amplifier at frequencies up to 600 Mc/s. The two tetrode systems are mounted round a common indirectly-heated oxide-coated cathode. Frequency. At frequencies above 150 Mc/s, with only
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TT20/JAN.
2X15W
hct 500
2x55
marconi company
marconi tube company
2X40
marconi
2X400
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Philips schema
Abstract: QQE02 schema preamplificateur 2x45W 2x25W 2X40
Text: PHILIPS 0 0 t 02/5 DOUBLE TETRODE for use as H.F. amplifier, oscillator and frequency multiplier DOUBLE TETRODE pour utilisation enramplificatrice, os cillatrice et multiplicatrice de fréquence H.F. DOPPELTETRODE zur Verwendung als HF-Verstärker, Oszillator
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QQE02/5
Philips schema
QQE02
schema
preamplificateur
2x45W
2x25W
2X40
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Thyratron 5727
Abstract: thyratron tube 2D21 Thyratron 2D21 2D21 thyratron pl 21 PL2D21 2d21 tube thyratron tube operation PL5727 Thyratron
Text: PHILIPS PL 5727 THYRATRON; inert gas filled tetrode with negative control characteristic, specially designed to assure dependable life and reliable operation THYRATRON; tetrode à remplissage de gaz inerte avec caracté ristique de commande negative,_spécialement conçu pour
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PL5727
Thyratron 5727
thyratron tube 2D21
Thyratron 2D21
2D21
thyratron pl 21
PL2D21
2d21 tube
thyratron tube operation
PL5727
Thyratron
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QQE03/12
Abstract: qqe03-12 2X15W QQE03 2x15 2x75W 2X10 Philips schema 2X40 2X39
Text: PHILIPS OQE 03/12 DOUBLE TETRODE for use as H.F. amplifier and oscillator, frequency multiplier and modulator DOUBLE TETRODE pour utilisation en amplificatrice et os culatrice H.F., multiplicatrice de fréquence et modulatrice DOPPELTETRODE zur Verwendung als HF-Verstärker und Os
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QQE03/12
QQE03/12
qqe03-12
2X15W
QQE03
2x15
2x75W
2X10
Philips schema
2X40
2X39
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"Frequency Tripler"
Abstract: 40647 Tripler noval socket philips 9 pin Frequency tripler
Text: PHILIPS QQC03/14 QUICK HEATING DOUBLE TETRODE for use as output tube, frequency multiplier or modulator. The tube has been designed for intermittent filament service in transistorized mobile equipment FILAMENT: oxide coated HEATING: direct; parallel supply
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QQC03/14
"Frequency Tripler"
40647
Tripler
noval socket philips 9 pin
Frequency tripler
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marking G2s
Abstract: No abstract text available
Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF1012S
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BF1012S
BF1012S
Q62702-F1627
OT-143
200MHz
200MHz
marking G2s
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marking code g1s
Abstract: marking g1s marking G2s
Text: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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Q62702-F1774
OT-343
marking code g1s
marking g1s
marking G2s
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SOT 343 MARKING BF
Abstract: 2SM10 marking code g1s
Text: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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Q62702-F1776
OT-343
SOT 343 MARKING BF
2SM10
marking code g1s
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BF965
Abstract: No abstract text available
Text: SIEM ENS BF 965 Silicon N Channel MOSFET Tetrode • Integrated suppression network against spurious VHF oscillations • For VHF applications, especially in TV tuners with extended VHF band, e.g. CATV tuners Type Marking Ordering Code BF 965 - Q62702-F660
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Q62702-F660
235b05
BF965
fl23SbOS
270k2i
A53SbD5
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MOSFET Tetrode
Abstract: No abstract text available
Text: SIEMENS Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution II CM 1 =S Q62702-F1775 II NCs Package
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Q62702-F1775
OT-143
MOSFET Tetrode
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7587 nuvistor
Abstract: nuvistor 7587 nuvistor 7587
Text: SQ PHILIPS 7587 SPECIAL QUALITY, SHOCK AND VIBRATION RESISTANT TETRODE, nuvistor type HEATINGIndirect "by A.C. or D.C. parallel supply Heater voltage Vf - 6.3 V Heater current If = 150 nA - 6.55 _ Dimensions in mm Base: TWELFAR 5 pin LIMITING VALÏÏES Absolute limits
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DB1-822
Abstract: BF1012
Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627
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BF1012S
1012S
Q62702-F1627
OT-143
800MHz
1012S
DB1-822
BF1012
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 1005 Silicon N-Channel MOSFET Tetrode •For low-noise, gain-controlled input stages up to 1GHz ■Operating voltage 5V ■Integrated stabilized bias network Drain AGC o HF o Input HF Output + DC G1 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1498
OT-143
800MHz
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pj 989
Abstract: No abstract text available
Text: 47E J> m S23SbOS 0Q243GS S • S I E G 1^31-35 Silicon N Channel MOSFET Tetrode BF 989 _ SIEMENS AKTIENGESELLSCHAF • • _ For amplifier and mixer stages in UHF and VHF TV tuners Low input and output capacitance Type Marking Ordering code
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S23SbOS
0Q243GS
Q62702-F874
Q62702-F969
fi23Sb05
BF989
pj 989
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marking jls
Abstract: marking code g1s
Text: SIEMENS BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Droin HF Output + DC E H A 0 7 2 Î5 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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1009S
1009S
Q62702-F1628
OT-143
marking jls
marking code g1s
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d 998 transistor circuit
Abstract: No abstract text available
Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998
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Q62702-F1129
T-143
M27ol
BB5151
J8B515
d 998 transistor circuit
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Untitled
Abstract: No abstract text available
Text: SIEMENS flE3SbOS OOTODSa TTl BF 1005 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network i D rain G21 AGC ° - HF °-II— In p u t HF O utp ut
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Q62702-F1498
OT-143
800MHz
BF1005
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13E1
Abstract: 13EI tetrode ediswan beam gm Scans-0017294
Text: I3EI BEAM TET R O D E Indirectly heated— for O.C. Control Applications G ENERAL This Low Impedance Beam Tetrode is intended or general D.C. Control applications and has a centre tapped heater. It is suitable for Triode connection and has a maximum anode dissipation of 90 watts.
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BRY 41
Abstract: BRY21 SIEMENS FAST THYRISTOR Tetrode pnpn
Text: ISIEG ESC D • Ö235b05 G0Q47b7 b PNPN Thyristor Tetrode BRY21 SIEMENS AKTIENGESELLSCHAF The BRY 21 is an extinguishable PNPN silicon planar thyristortetrode in T 0 12 case 5 C 4 DIN 41 873 . The anode gate (Ga ) is electrically connected to the case. The BRY 21 is particularly
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235b05
G0Q47b7
BRY21
Q62702-R81
BRY 41
BRY21
SIEMENS FAST THYRISTOR
Tetrode pnpn
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marking code g1s
Abstract: No abstract text available
Text: BF 1012 SIEMENS Silicon N-Channel MOSFET Tetrode ’ For low-rioise, gain-controlled input stages up to 1GHz •Operating voltage 12V 1Integrated bias network X Oroin 0 -J-G 2 AGC HF o Input G1 1 HF Output + DC > " J gñd" ESD : Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1487
T-143
800MHz
marking code g1s
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