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    TF 011 Search Results

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    TF 011 Price and Stock

    Bel Fuse 0ZTF0110FF2C

    PTC RESET FUSE 16V 1.1A 2920
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    DigiKey 0ZTF0110FF2C Reel 2,000
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    0ZTF0110FF2C Digi-Reel 1
    • 1 $1.18
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    0ZTF0110FF2C Cut Tape 1
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    Avnet Americas 0ZTF0110FF2C Ammo Pack 12 Weeks, 3 Days 1
    • 1 $0.615
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    0ZTF0110FF2C Reel 12 Weeks 2,000
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    Newark 0ZTF0110FF2C Cut Tape 1,482 1
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    0ZTF0110FF2C Reel 2,000
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    Bourns Inc PTF01-152A-103B1

    SLIDE POT 10K OHM 0.5W TOP 100MM
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    DigiKey PTF01-152A-103B1 Tray
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    Bourns Inc PTF01-152A-104B2

    SLIDE POT 100KOHM 0.5W TOP 100MM
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    DigiKey PTF01-152A-104B2 Bulk 375
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    Master Electronics PTF01-152A-104B2 734
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    Bourns Inc PTF01-152A-102B2

    SLIDE POT 1K OHM 0.5W TOP 100MM
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    Newark PTF01-152A-102B2 Bulk 375
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    Bourns Inc PTF01-151A-504B2

    SLIDE POT 500KOHM 0.5W TOP 100MM
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    TF 011 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AC101TF

    Abstract: Altima Communications Altima AC101QF TP125 561b
    Text: Altima Communications Inc. AC101QF/TF Ultra Low Power 10/100 Ethernet Transceiver GENERAL DESCRIPTION FEATURES The AC101QF/TF is a highly integrated, 3.3V, low power, 10Base-T/100Base-TX/FX, Ethernet transceiver implemented in 0.35µm CMOS technology. Multiple modes of operation, including


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    AC101QF/TF AC101QF/TF 10Base-T/100Base-TX/FX, 100FX 80TQFP 100PQFP 280mW AC101TF Altima Communications Altima AC101QF TP125 561b PDF

    AC101TF

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET • AC101 AC101QF/TF Ultra Low Power 10/100 Ethernet Transceiver GENERAL DESCRIPTION FEATURES The AC101QF/TF is a highly integrated, 3.3V, low power, 10BASE-T/100BASE-TX/FX, Ethernet transceiver implemented in 0.35 µm CMOS technology. Multiple modes of operation,


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    AC101 AC101QF/TF 10BASE-T/100BASE-TX/FX, buil6/04/01 AC101-DS01-RÂ AC101TF PDF

    Untitled

    Abstract: No abstract text available
    Text: 7GHz, 1:2 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION Micrel Precision Edge SY58011U SY58011U FEATURES Precision 1:2, 400mV CML fanout buffer Guaranteed AC performance over temperature/ voltage: • > 7GHz fMAX clock • < 60ps tr / tf times


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    SY58011U 400mV 250ps SY58011U PDF

    011U

    Abstract: SY58011U SY58011UMG SY58011UMI SY58011UMITR SY58012U SY58013U
    Text: Micrel, Inc. 7GHz, 1:2 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION SY58011U Precision Edge SY58011U FEATURES Precision 1:2, 400mV CML fanout buffer Guaranteed AC performance over temperature/ voltage: • > 7GHz fMAX clock • < 60ps tr / tf times


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    SY58011U 400mV 250ps 10psPP SY58011U M9999-051408 011U SY58011UMG SY58011UMI SY58011UMITR SY58012U SY58013U PDF

    Untitled

    Abstract: No abstract text available
    Text: Micrel, Inc. 7GHz, 1:2 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION SY58011U Precision Edge SY58011U FEATURES Precision 1:2, 400mV CML fanout buffer Guaranteed AC performance over temperature/ voltage: • > 7GHz fMAX clock • < 60ps tr / tf times


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    SY58011U 400mV 250ps 10psPP 100mV 16-pin M9999-020207 PDF

    Untitled

    Abstract: No abstract text available
    Text: Micrel, Inc. 7GHz, 1:2 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION SY58011U Precision Edge SY58011U FEATURES Precision 1:2, 400mV CML fanout buffer Guaranteed AC performance over temperature/ voltage: • > 7GHz fMAX clock • < 60ps tr / tf times


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    SY58011U 400mV 250ps 10psPP SY58011U M9999-110905 PDF

    Untitled

    Abstract: No abstract text available
    Text: INCHES MILLIMETERS CUSTOMER DRAWINGS AVAILABLE UPON REQUEST Type N Jack Termination CP-ETN-TF 50 Ohm 1 Watt Cambridge Products, P.O. Box 1732, Waseca, MN 56093-0832 • 1-800-243-8814 • Fax: 507-833-6287 • www.cambridgeproducts.com N Connectors Specifications


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    -65OC 165OC MIL-STD-202 RG-58 PDF

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


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    NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138 PDF

    vlt 2900

    Abstract: uPD78P334 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334
    Text: • 5/— h M osm m m s& M O S Integrated Circuit /¿PD78P334 1 6 / 8 tf "y V • > > //PD 78P334 It, "y~? • v> f ^ □ ¿«PD 78334C Q rtg|$v*;? ROM •7> • i '- f A P R O M S S . B , —J tf c 'I t fc, EPROM S n M i, b° zl — 9 • ? -f A PROM i f c t i EPROM U S # f t x . / c n nn 'C f „


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    uPD78P334 78P334 78334C PD78334 32768X8 J2T43Bt\ 24-i- vlt 2900 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334 PDF

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number: EN 2 4 2 5 2SD1878 No.2425 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features . High speed tf=100ns


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    2SD1878 100ns 2039D T03PML 2207TA 2425-l/3 PDF

    10gd1

    Abstract: LM11p M11-P
    Text: tfûPulse S Electronics www.pulseelectronics.com NOTES: U N L E SS OTHERWISE SPEC IFIED NOTICE: RoHS / v / THIS IS A Ro H S COMPLIANT COMPONENT/PRODUCT. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER. 2. PLASTIC HOUSING: THERMOPLASTIC MATERIAL WITH FLAMMABILITY


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    007--C 10gd1 LM11p M11-P PDF

    la7200

    Abstract: MG50N2YS
    Text: MG50N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=1.Oys Max. trr=0.5<Js(Max.) . Low Saturation Voltage: VcE(sat)= 5.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One


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    MG50N2YS1 El/08 la7200 MG50N2YS PDF

    2SC4430

    Abstract: No abstract text available
    Text: Ordering number: EN 2853 _ 2 S C 4 4 3 0 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F e a tu re s . High breakdown voltage, high reliability •F ast switching speed tf: 0.1 ps typ • Wide ASO • Adoption of MBIT process


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    2SC4430 300ps 2SC4430 PDF

    TCS 4199

    Abstract: M80C186
    Text: tF ^ m L O G M M V in te i M28F010 1024K 128K x 8 CMOS FLASH MEMORY ETOX-III Flash-Memory Technology — EPROM-Compatible Process Base — High-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts 10,000 Program/Erase Cycles Minimum


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    M28F010 1024K M28F010 TCS 4199 M80C186 PDF

    k302p

    Abstract: No abstract text available
    Text: K3020P G Series v rn m ▼ Vishay Telefunken tf Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


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    K3020P k302p PDF

    2SC5352

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5352 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5352 Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS 03.2 ±0.2 1 5.9 MAX. HIGH SPEED DC-DC CONVERTER APPLICATIONS • Excellent Switching Times : tr = 0.5 jus Max. , tf = 0.3 jus (Max.) (l£ = 4 A)


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    2SC5352 2SC5352 PDF

    acc01

    Abstract: No abstract text available
    Text: RED INDICATES ORIGINAL DATA CONTAINS] IN THIS OOCLMBfT IS PROPRIETARY TD TFD TETBi ELH-IHJNICS D C . AM SHALL HOT BE DISCLDSH), CIPIBJ CR USS} F tF PRXURBENT DR MAMJFACTUS WITHO/T EXPRESS W I T T » PSMISSION. -002 -003 -004 -005 -006 -007 -008 -009 -010


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    -013A -015A RG-178 RG-174 RG-179 RG-188 GRUMMAN-GCB75GPI RG-187 RG-195 YR23023 acc01 PDF

    jt 7081

    Abstract: No abstract text available
    Text: K3010P G Series v r n m ▼ Vishay Telefunken tf Optocoupler with Phototriac Output Description The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


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    K3010P jt 7081 PDF

    Untitled

    Abstract: No abstract text available
    Text: ß R lIÜ M M tf In te l 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 ¡xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical


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    28F020 2048K X28F020-90 ER-20, ER-24, RR-60, AP-316, AP-325, PDF

    Untitled

    Abstract: No abstract text available
    Text: A W Â M ! D M IF iO ^G töA TF O !^ in te i SPECIAL ENVIRONMENT lntel386TM EX EMBEDDED MICROPROCESSOR • Static ln tel38 6 T M CPU Core — Low Power Consumption — 5V ± 5% Operating Power Supply — 25 MHz Operating Frequency ■ Transparent Power-management


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    lntel386TM tel38 32-bit Intel386 16-bit 168-lead 164-lead PDF

    2222 031 capacitor philips

    Abstract: TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor
    Text: P hilips Sem iconductors VHF linear push-pull power MOS transistor PH ILIPS T - tf- lZ INTERNATIONAL 5bE D 711 005b BLF348 D0M3RD3 031 H P H I N PIN CONFIGURATIO N FE A T U R E S • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


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    BLF348 711005b 2222 031 capacitor philips TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor PDF

    2SC3994

    Abstract: No abstract text available
    Text: Ordering number: EN 2828 2 S C 3 9 94 No.2828 NPN Triple Diffused P la n ar Silicon T ransistor Switching Regulator Applications F eatures • High breakdow n voltage, high reliability • F a st sw itching speed tf= 0.1ps typ • W ideA SO • Adoption of MBIT process


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    2SC3994 2SC3994 PDF

    t51q

    Abstract: No abstract text available
    Text: <g MOTOROLA Military 10506 Triple 4-3-3 Input NOR Gate ELECTRICALLY TESTED PER: MIL-M-38510/06004 HP0 unni The 10506 is a triple 4-3-3 input NOR gate. • 35 mW Max/Gate No Load) • tp(j = 2.8 ns typ • tr, tf = 2.0 ns typ (20% - 80%) AVAILABLE AS PIN ASSIGNMENTS


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    MIL-M-38510/06004 10506/BXAJC MC12015DR2 t51q PDF

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I TM I tf n U i t HY57V16801 Series 2M I X 8 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16801 is a very high speed 3.3 Volt synchronous dynamic RAM organized 2,097,152x8bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 1,048,576


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    HY57V16801 152x8bits, 1SD02-00-MAY95 4L750fifi 400mil 4b750flfi PDF