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    TF 130 Search Results

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    TF 130 Price and Stock

    Amphenol Sine Systems ATF13-08PB-BM01

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    DigiKey ATF13-08PB-BM01 Bulk 67 1
    • 1 $19.87
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    Interstate Connecting Components ATF13-08PB-BM01
    • 1 $13.2339
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    Powell Electronics ATF13-08PB-BM01 231
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    Master Electronics ATF13-08PB-BM01
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    Amphenol Sine Systems ATF13-08PD-BM13

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    DigiKey ATF13-08PD-BM13 Bulk 50 1
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    Newark ATF13-08PD-BM13 Bulk 50 1
    • 1 $2.35
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    Interstate Connecting Components ATF13-08PD-BM13
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    Master Electronics ATF13-08PD-BM13
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    Amphenol Sine Systems ATF13-08PD-BM11

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    DigiKey ATF13-08PD-BM11 Bulk 47 1
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    Newark ATF13-08PD-BM11 Bulk 50 1
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    Interstate Connecting Components ATF13-08PD-BM11
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    Master Electronics ATF13-08PD-BM11
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    Amphenol Sine Systems ATF13-08PD-BM01

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    DigiKey ATF13-08PD-BM01 Bulk 40 1
    • 1 $19.63
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    Newark ATF13-08PD-BM01 Bulk 50 1
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    Interstate Connecting Components ATF13-08PD-BM01
    • 1 $13.2339
    • 10 $13.2339
    • 100 $12.3632
    • 1000 $9.8743
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    Master Electronics ATF13-08PD-BM01
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    Amphenol Sine Systems ATF13-08PC-BM01

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    DigiKey ATF13-08PC-BM01 Bulk 37 1
    • 1 $19.63
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    Newark ATF13-08PC-BM01 Bulk 50 1
    • 1 $3.85
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    Interstate Connecting Components ATF13-08PC-BM01
    • 1 $13.2339
    • 10 $13.2339
    • 100 $12.3632
    • 1000 $9.8743
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    Master Electronics ATF13-08PC-BM01
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    TF 130 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TF130 Greenlee Textron Equipment - Specialty, Test and Measurement, SENSOR PRESSURE-130KN Original PDF
    TF1301610000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 13POS TOP ENT 3.5MM PCB Original PDF

    TF 130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    15268

    Abstract: AM150MX-TF
    Text: AM150MX-TF September 2002 Rev. 3 DESCRIPTION AMCOM’s AM150MX-TF is a part of the TF series of GaAs MESFETs. This part has a total gate width of 15.0mm. The AM150MX-TF is designed for high power microwave applications, operating up to 6 GHz. The TF series is in a drop-in mounting style. The bottom of the


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    PDF AM150MX-TF AM150MX-TF 36dBm 15268

    AC101TF

    Abstract: Altima Communications Altima AC101QF TP125 561b
    Text: Altima Communications Inc. AC101QF/TF Ultra Low Power 10/100 Ethernet Transceiver GENERAL DESCRIPTION FEATURES The AC101QF/TF is a highly integrated, 3.3V, low power, 10Base-T/100Base-TX/FX, Ethernet transceiver implemented in 0.35µm CMOS technology. Multiple modes of operation, including


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    PDF AC101QF/TF AC101QF/TF 10Base-T/100Base-TX/FX, 100FX 80TQFP 100PQFP 280mW AC101TF Altima Communications Altima AC101QF TP125 561b

    Untitled

    Abstract: No abstract text available
    Text: BRIGHT VIEW ELECTRONICS CO.,LTD LED TAPE AND REEL LAMP BVQ-5M1RS1 -TF PACKAGE CONFIGURATION Processive direction H DESCRIPTION P2 P1 Dice Material : Light Color : Lens Color : Stand-Off P/N : GaAlAs/GaAs Red Red Color Red Diffused BVQ-5M1RS1 R-TF ANODE W2


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    PDF

    USW-2

    Abstract: Thermal CUTOFF thermal-cutoff USW-215T E126429 USW-225T USW-210T 216t US ELECTRONICS
    Text: Thermal Cutoff USW-2 series Thermal Cutoff Fuses U.S. Electronics Inc Ph: 314 423 7550 USW-2 SERIES Fax: (314) 423 0585 TEMPERATURE Part No. Tf Tf Tolerance USW-211T 102°C(241.2°F) 70°C(183.6°F) USW-210T 115°C(264.6°F) 85°C(210.6°F) USW-215T 130°C(291.6°F)


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    PDF USW-211T USW-210T USW-215T USW-216T USW-217T USW-225T E126429 250VAC 250VAC, USW-2 Thermal CUTOFF thermal-cutoff USW-215T E126429 USW-225T USW-210T 216t US ELECTRONICS

    AC101TF

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET • AC101 AC101QF/TF Ultra Low Power 10/100 Ethernet Transceiver GENERAL DESCRIPTION FEATURES The AC101QF/TF is a highly integrated, 3.3V, low power, 10BASE-T/100BASE-TX/FX, Ethernet transceiver implemented in 0.35 µm CMOS technology. Multiple modes of operation,


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    PDF AC101 AC101QF/TF 10BASE-T/100BASE-TX/FX, buil6/04/01 AC101-DS01-RÂ AC101TF

    sefuse d6x

    Abstract: SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E
    Text: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*conform since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are


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    PDF AC250V SF70E SF76E SF91E SF96E SF113E SF119E 50Ohm DC32V sefuse d6x SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E

    SEFUSE SF240E

    Abstract: SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x
    Text: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*compliant since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are


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    PDF AC250V SF70E SF76E SF91E SF96E SF113E SF119E 50Ohm DC32V SEFUSE SF240E SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x

    Pt 100 RTD Siemens

    Abstract: circuit diagram for profibus connector siemens Siemens pt100 temperature transmitter Siemens PT100 temperature sensor RTD Thermocouple Type L Thermocouple Type g Siemens PT100 temperature sensor type s thermocouple siemens Pt100 3 wire PT-100 temperature transducer
    Text: TF 212 / TF 212-Ex Field mounted temperature transmitters, PROFIBUS PA, Pt 100 RTD , thermocouples, 1 or 2 independent channels 10/11-8.70 EN P R O F PROCESS FIELD BUS B U S • Input – – – – Resistance thermometer (2, 3, 4-wire method) Thermocouples


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    PDF 212-Ex Pt 100 RTD Siemens circuit diagram for profibus connector siemens Siemens pt100 temperature transmitter Siemens PT100 temperature sensor RTD Thermocouple Type L Thermocouple Type g Siemens PT100 temperature sensor type s thermocouple siemens Pt100 3 wire PT-100 temperature transducer

    MCT2E soic

    Abstract: hma121 H11AG3 moc3041 MOC3051 MOC3043 equivalent MOC3051-M MOC3041-M MOC256-M moc3041 application note
    Text: Optoelectronics Products Optocouplers 4-Pin DIP Part Number Forward Voltage VF V CTR @ 1mA IF (%) Min Max BVCEO Min (V) BVECO Min (V) tR/tF Max (µs) VISO ACRMS (V) 1 Minute 7500 35 6 300 / 250 5300 Max BVCEO Min (V) BVECO Min (V) tR/tF Max (µs) VISO ACRMS (V)


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    PDF H11B815 H11AA814 H11AA814A NumberOC208-M MOC211-M MOC212-M MOC213-M MOC215-M MOC216-M MOC217-M MCT2E soic hma121 H11AG3 moc3041 MOC3051 MOC3043 equivalent MOC3051-M MOC3041-M MOC256-M moc3041 application note

    LR26550

    Abstract: No abstract text available
    Text: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting


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    PDF E43149; LR26550 LR26550

    latching relay

    Abstract: 12v dc relay 8 pin 12V RELAY PIN DIAGRAM 5 pin relay 12v 5 V DC RELAY ac relay Matsushita polarized relay 7 pin RELAY 1500 V LR26550 TF224 8 pin SMD relay
    Text: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting


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    PDF E43149; LR26550 latching relay 12v dc relay 8 pin 12V RELAY PIN DIAGRAM 5 pin relay 12v 5 V DC RELAY ac relay Matsushita polarized relay 7 pin RELAY 1500 V LR26550 TF224 8 pin SMD relay

    1838 t

    Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
    Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf


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    PDF IRGPH50MD2 C-481 1838 t 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485

    D-10

    Abstract: IRGPH50MD2 1838t
    Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf


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    PDF IRGPH50MD2 C-481 D-10 IRGPH50MD2 1838t

    2SK3046

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


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    PDF 2SK3046 130mJ O-220D 2SK3046

    ENH064V1-1300

    Abstract: No abstract text available
    Text: ENH064V1-1300 ENH064V1-1300 Color TF eatures TFTT-LCD Module FFeatures PERFORMANCE FEATURES n 16cm [6.4"] VGA Format n High Brightness 1300 cd/m² n Built-in Long Life CCFT Backlight n Index Matching Film (IM) n Wide Viewing Angle Horizontal: 120 Vertical: 90


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    PDF ENH064V1-1300 ENH064V1-1300

    TF915

    Abstract: 800 300 tf91320 10MSA
    Text: o fast switching thyristors > 1OOArms thyristors rapides > lOOAeff TtlOMSON'CSF Tamb = * ° C Types •o V r r M ■tsiwi* 10 ms VDRM V (A) (A) 700 Arm s / Tease = 80°C Tj = 125°C TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 01 02 04 06 08 10


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    PDF TF915 800 300 tf91320 10MSA

    c 828

    Abstract: C828 mu 171 10MSA
    Text: S G S — TH O M SO N 0 | 7 1 2 1 S 3 7 □ □ 0 ‘H S S THOMSON SEMICONDUCTORS 0 I fast switching thyristors ^ 1 0 0 Arms Tomb = 25°C •o Types <TSM* 10 ms V RRM V DRM A 700 A r m s /Tease = 80°C TF 666 TF 666 TF 666 TF 666 TF 666 _TF 666 TF 666 TF 666


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    PDF CB-265) c 828 C828 mu 171 10MSA

    PE1541

    Abstract: PM8943 Philips capacitor 166 Philips electrolytic 132
    Text: Philips Semiconductors Product specification Video driver hybrid amplifier FEATURES PINNING • Typical transition timer, 10 to 90% with C l = 10 pF: - at 35 V (p-p) swing tr = 2.2 ns; tf = 2.0 ns - at 40 V (p-p) swing tr = 2.3 ns; tf = 2.1 ns - CR3424 PIN


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    PDF CR3424 OT115L. 2600B PE1541, PM8943, PE1541 PM8943 Philips capacitor 166 Philips electrolytic 132

    Untitled

    Abstract: No abstract text available
    Text: SMJ4C1024 1 048 576-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS023B-DECEMBER 1988-REVISED MARCH 1992 H J / HL / FQ PA CKA G ESt TOP VIEW Processed to MIL-STD-883, Class B Single 5-V Supply (10% Tolerance) TF c NC c Performance Ranges: W A9 RÄS TF A0 A1 'a(C)


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    PDF SMJ4C1024 576-BIT SGMS023B-DECEMBER 1988-REVISED MIL-STD-883, 4C1024-80 4C1024-10 4C1024-12 4C1024-15

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


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    PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138

    Diode MARKING S37

    Abstract: DIODE A131 ERC38
    Text: E R C 3 8 ia : Outline Drawings « a a ia ^ ^ - K FAST RECOVERY DIODE A • 45^1 I Features • a tf - K tf # # ! ;» » .' ■ Super high speed switching. : Marking • f-'sX'sn&lfikv fit-3 - K; È Low VF in turn on Color COC6 : White n m z High voltage by mesa design.


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    PDF ERC38 Diode MARKING S37 DIODE A131

    2sd 2901

    Abstract: low noise HEMT 2sd 311
    Text: Low Noise HEMT Chip Form JS8901-AS FEATURES: ULTRA LOW NOISE FIGURE I.O d B a tf = 12 GHz 1.3 dB a tf = 18 GHz • 0.3 ¿tm GATE LENGTH SUPER HIGH ASSOCIATED GAIN 11 dB at f = 12 GHz 9 d B a t f = 18 GHz CHIP FORM HIGH MAXIMUM AVAILABLE GAIN 13 dB at f = 12 GHz


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    PDF JS8901-AS 12GHz 18GHz 12GHz 18GHz 2sd 2901 low noise HEMT 2sd 311

    msc 5511

    Abstract: 276 238G TFK 241 d78p238 TFK 082 uPD78P238 uPD78P238GC uPD78P238KF PD78P238GJ sbthi
    Text: M o s » i t m s s M O S Integrated C ircu it //PD78P238 ¿¿PD78P238 Ci, //PD78238 75^/1v 7. ? ROM £ 9 > • ? < A PROM i v ^ ^ P = i > t 0i - ^ T " - r o (i EPROM H t ^ l i / : 8 tf 7 h • v ^ -— tf(Z «t £ 7 ° P 7 = j A *ê& <& .*<nJtÊ& 'fc«>,


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    PDF uPD78P238 PD78P238 //PD78238 PD78234, PD78P238KF 78P238G msc 5511 276 238G TFK 241 d78p238 TFK 082 uPD78P238GC uPD78P238KF PD78P238GJ sbthi

    gs 069 0605

    Abstract: 4210M 8016 nec 5501 gm
    Text: SUPER LOW NOISE HJ FET FEATURES_ NE4210M01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • S U P E R L O W N O IS E F IG U R E : 0.8 dB TYP a tf = 12 GHz • H IG H A S S O C IA T E D G A IN : 11.0 dB TYP a tf = 12 GHz • G A T E W ID T H : W g = 200 jim


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    PDF NE4210M01 NE4210M01 24-Hour gs 069 0605 4210M 8016 nec 5501 gm