sefuse d6x
Abstract: SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E
Text: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*conform since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are
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AC250V
SF70E
SF76E
SF91E
SF96E
SF113E
SF119E
50Ohm
DC32V
sefuse d6x
SEFUSE d6y
SEFUSE
SEFUSE SF214E
SEFUSE SF240E
SEFUSE SF129E
SFH162E
SFH124E
SF 127c
SFH109E
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SEFUSE SF240E
Abstract: SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x
Text: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*compliant since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are
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AC250V
SF70E
SF76E
SF91E
SF96E
SF113E
SF119E
50Ohm
DC32V
SEFUSE SF240E
SEFUSE SF214E
sefuse d6x
SEFUSE d6y
SM125A0
SF240E
SF113E
SEFUSE SF129E
SF214E
nec d6x
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LR26550
Abstract: No abstract text available
Text: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting
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E43149;
LR26550
LR26550
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latching relay
Abstract: 12v dc relay 8 pin 12V RELAY PIN DIAGRAM 5 pin relay 12v 5 V DC RELAY ac relay Matsushita polarized relay 7 pin RELAY 1500 V LR26550 TF224 8 pin SMD relay
Text: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting
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E43149;
LR26550
latching relay
12v dc relay 8 pin
12V RELAY PIN DIAGRAM
5 pin relay 12v
5 V DC RELAY
ac relay
Matsushita polarized relay 7 pin
RELAY 1500 V LR26550
TF224
8 pin SMD relay
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TF2 RELAY
Abstract: DC/24 v DC relay TF2-L2-12V TF2-12V-3
Text: TESTING SMALL POLARIZED RELAY WITH HIGH SENSITIVITY 14 .551 TF-RELAYS FEATURES 9 .354 • Minimal magnetic interference allows high density mounting • Sealed construction allows automatic cleaning • Self-clinching terminal also available • High sensitivity:
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TF2-12V
TF2 RELAY
DC/24 v DC relay
TF2-L2-12V
TF2-12V-3
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tf2-12v-3
Abstract: TF2-12V TF2-L2-24 TF2-24V tf-245 TF2L5V
Text: TESTING SMALL POLARIZED RELAY WITH HIGH SENSITIVITY 14 .551 TF-RELAYS FEATURES 9 .354 • Minimal magnetic interference allows high density mounting • Sealed construction allows automatic cleaning • Self-clinching terminal also available • High sensitivity:
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TF2-12V
tf2-12v-3
TF2-12V
TF2-L2-24
TF2-24V
tf-245
TF2L5V
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Untitled
Abstract: No abstract text available
Text: TESTING SMALL POLARIZED RELAY WITH HIGH SENSITIVITY 14 .551 TF-RELAYS FEATURES 9 .354 • Minimal magnetic interference allows high density mounting • Sealed construction allows automatic cleaning • Self-clinching terminal also available • High sensitivity:
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TF2-12V
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micro switch t85 10e3
Abstract: ENEC SR T85 T85 50e3 Switch 250vac MICRO SWITCH 250VAC-10E3 R5 Series T85 50e3 T85/50e3 T125U SR T85 ENEC 10 10e3 t90
Text: Snap-acting Product Selection Guide Snap-acting Series Switch Type Poles/Throws Maximum Current TF TM LC LCA LCS MM Miniature Miniature Subminiature Precision Subminiature Sealed Subminiature Subminiature SPST, SPDT SPST, SPDT SPST, SPDT SPDT SPST Subminiature
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5 V DC RELAY
Abstract: magnetic stripe Matsushita polarized relay Matsushita relay 12V pc nais TF2-5V relay
Text: TESTING SMALL POLARIZED RELAY WITH HIGH SENSITIVITY 14 .551 TF-RELAYS FEATURES 9 .354 • Minimal magnetic interference allows high density mounting • Sealed construction allows automatic cleaning • Self-clinching terminal also available • High sensitivity:
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TF2-12V
5 V DC RELAY
magnetic stripe
Matsushita polarized relay
Matsushita relay 12V pc
nais TF2-5V relay
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Transistor 358 to3
Abstract: 2N5038 20A npn transistor 7333
Text: 2N5038 Power Transistor Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features: • High speed -tf = 0.5µs Maximum .
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2N5038
Transistor 358 to3
2N5038
20A npn
transistor 7333
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Untitled
Abstract: No abstract text available
Text: , One. ^E.mL-Conducto'i LPi TELEPHONE: 973 376-2922 (212)227-6005 FAX; (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER TRANSISTORS PT I 1 TYPE NO. MAXIMUM RATINGS ff%TO^ V hri ^M BvB^T V A •""W"^fc &tf Ic MfN MAX A Vet V Sat
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2N1047
2N1048
2N1049
2N1050
2N1768
2N1769
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113 y
Abstract: HA 1329 QN-08 1329 y-448 AO2222
Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.147ns, one fanout (SL = 0.00866pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2 ad4d4 ad5
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147ns,
00866pF)
ao211
ao2111
ao2111d2
ao211d2
ao211d4
ao21d2
ao21d4
ao221
113 y
HA 1329
QN-08 1329
y-448
AO2222
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PN208
Abstract: No abstract text available
Text: Darlington Phototransistors PN208 Darlington Phototransistor Unit : mm For optical control systems 2.9±0.25 1.2 4.5±0.3 0.9 1.7±0.2 0.8 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in
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PN208
PN208
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Untitled
Abstract: No abstract text available
Text: NONLINEAR MODEL UPA861TD BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 8e-17 137e-18 MJC 0.53 0.24 BF 128 129 XCJC 1 0.3 NF 1 0.9992 CJS VAF 17 22.4 VJS 0.75 0.75 IKF 0.18 2.8 MJS ISE 3.3e-15 229e-15 FC 0.37 0.55 NE 1.48 2.5 TF 6e-12
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UPA861TD
8e-17
3e-15
4e-15
415e-12
102e-12
137e-18
229e-15
227e-18
68e-12
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200n60
Abstract: 200N60A
Text: VCES HiPerFAST IGBT ^C25 IXGN 200N60 600V 200A IXGN 200N60A 600V 200A V * CE sat tf. 2.5 V 350ns 2.7 V 200ns G é i V minIBLOC, SOT-227 B T e s t C o n d itio n s V CES T j = 25°C to150°C v CGR ^ v GES v’' gem Continuous ±20 V Transient ±30 V Tc = 25°C
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200N60
200N60A
350ns
200ns
to150
OT-227
E153432
IXGN200N6Q
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Untitled
Abstract: No abstract text available
Text: HARRIS SEfUCOND SECTOR b lE D • 43Ü5571 0 D 4 b n s fflHARRIS SEMICONDUCTOR DIT B H A S CA3588 U A 3 0 0 ,LCA2904 fA 2 9 0 * tf U U LM358*, LM2904* Dual Operational Amplifiers for Commercial Industrial, and Military Applications March 1993 Features Description
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CA3588fA
LCA2904
LM358*
LM2904*
CA158,
CA158A,
CA258,
CA258A,
CA358,
CA358A
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Untitled
Abstract: No abstract text available
Text: NEW FP Series Lug/Snap-in Terminal T y p e }iA /§ l!z M , Long L ife (S tf o p ), Low Impedance(jgpfljn) FEATURES 1. Highly ripple, high reliability 2. Low equivalent series resistance ESR. 3. Different case sizes available for each capacitance value. 4. Load life with ripple current: 5000hrs
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5000hrs
100VDC
33000pF
120Hz,
25x40
25x30
30x35
30x40
30x45
35x35
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thyristors 5000 volt 3000 amperes
Abstract: Lem LT 300 - t CODE 1AM powerex T9G T9G0 Lem LT 300
Text: P0U1EREX INC m u o D5 a x DE 1 7 5 c14bEl QD03DSb S _ T - 2 S *2 tf T9G0 Pow erex, Inc. Hlllls Street, Youngwood, Pennsylvania 15897 412 925 -7 2 7 2 Phase Control SCR P o w e re x Europe, S.A., 4 28 Ave. Q. Durand, BP107, 72003 LeM ana, France (43 ) 72.75.1S
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14bEl
QD03DSb
BP107,
Amperes/2400-4000
AX/10
thyristors 5000 volt 3000 amperes
Lem LT 300 - t
CODE 1AM
powerex T9G
T9G0
Lem LT 300
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AH0008
Abstract: lz-12
Text: - 227- • OEI ft ÄÜ * £ fê Ta = 25°C n£ ^7 AH0008 Vcc # ii ô<j ÎÏ a # V cc(V ) ( 7 7 - 7 h • -fe-y I- U > ? ', ±18 V [ ¡HI te £ Í# f* ¿5 'h ± 8 — + 18 V Vo V GBW V fc Io y,-tf D C , V o = + 10V lc c = TiJV HYB V/ * + 5 / — 10 mW P d
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AH0008
200nS
300nS
450nS
sS100Q
100Hz
fisS100Q
SsS100!
AH0008
lz-12
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Untitled
Abstract: No abstract text available
Text: 2SE D KODENSHI CORP SG-2BClis S 2 4 2 t 0 a 0Q00277 2 Kfc. iS i& J t? * h b ‘f l ' 7 3 DIMENSIONS Unit: mm 5 >y^"5— ^(C(K^LfcS;#fS7=t h-tr>tf"C\ The SG-2BC reflective sensor combines a GaAs IRED with a high-sensitivity phototransistor in a super-mini (4$5)
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0Q00277
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Untitled
Abstract: No abstract text available
Text: m ä h im mee im 8 mimo am u p h o x c tio n THIS ORANINO IS UNPUBLISHED* 00»WU—T tf 1 RgtgAggp POR PUBLICATION •r ANP IlKWHWiWD. ALL MTOMATIOMAL»UNII M «19 LOG oisr AJ 1 6 • REVISIONS cm P yy y y y y A BRASS PER ASTM-B-453. A BRASS PER ASTM-B-76.
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AJ-2716
AJ-S068
AJ-6069
2-23-3S
OQ-Z-363.
ASTM-B-453.
ASTM-B-76.
QQ-N-290,
M1L-G-4520
10-31-S
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b1207
Abstract: tf s 544 a tf s 544
Text: 4 3 THIS OPAMING IS UNPUBLISHED. C | COPYRIGHT 1â RELEASED FÛR PUBLICATION BY AMP INCORPORATED. 1 2 ,19 LOC AJ ALL RiertT5 RESERVED. REVISIONS DIST 16 J REV PER ÛG3Û-Û431-98 28QCT98 MO JC .544 MAX 1. FOR USE WITH: RIGID CABLE 2. SEE *3 R TF E PER A S T M D 1 7 1 0
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28QCT98
RG-402/U
ASTM-A-582
ZZ-R-765
ASTM-B-197
005DEBURR
M39012/79B3307
B-12-07
11JUN37
29-0CT-38
b1207
tf s 544 a
tf s 544
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BCR16DM-12
Abstract: BCR16DM BCR16DM-8 BCR16CM BCR16CM-10 BCR16CM-12 BCR16CM-4 BCR16CM-6 BCR16CM-8 BCR16DM-10
Text: 184 — — = C tf'7 3 > • •/ f £#■'#] 10, 1 2 ? 7 x c i S & t £ T O * - M , K ttiil it ifl'J I drm Vtm t BCR16CM-4 BCR16CM-6 BCR16CM-8 BCR16CM-10 BCR16CM-12 Vdsm 300 400 600 700 800 Vdrm 200 300 400 500 600 16 i r<-=ioo°c, Afflisi ¿S ì» In rm s)
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BCR16CM
125-C.
BCR16CM-4
BCR16CM-6
BCR16CM-8
BCR16CM-10
BCR16CM-12
H-101
BCR16DM-12
BCR16DM
BCR16DM-8
BCR16CM-12
BCR16DM-10
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FSM30C6
Abstract: FSM30C FSM30c2 FSM30C4 H-17 H-18
Text: - 174 - a FSM30C oT0-3fiJl^-77v o77XhyfktWik 07= 7- y 3>-f y7'fëiE OÜLtS^Ä File No. E809771 •*5Ë*S ¡¿ FSM30C2 ($7—V-2.PÆ , AC1500V I'/m T„=25°C' RMS avi Igm di/dl T, Tsig 200 30(Tf=63°C) 275(50Hz, 300(/=2~10m s) 10 0.5 10 3 20[Vd— %V’drm)
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FSM30C
E80977)
FSM30C2
FSM30C4
FSM30C6
H-101
FSM30C6
H-17
H-18
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