HN4B101J
Abstract: No abstract text available
Text: HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type PCT Process HN4B101J MOS Gate Drive Applications Switching Applications High-speed switching : PNP tf = 45 ns (typ.) : NPN tf = 50 ns (typ.) 1 2 5 0.4±0.1 VCE (sat) = 0.17 V (max) 1.9±0.2 VCE (sat) = −0.20 V (max)
|
Original
|
PDF
|
HN4B101J
HN4B101J
|
LR26550
Abstract: No abstract text available
Text: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting
|
Original
|
PDF
|
E43149;
LR26550
LR26550
|
latching relay
Abstract: 12v dc relay 8 pin 12V RELAY PIN DIAGRAM 5 pin relay 12v 5 V DC RELAY ac relay Matsushita polarized relay 7 pin RELAY 1500 V LR26550 TF224 8 pin SMD relay
Text: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 14 .551 9 .354 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting
|
Original
|
PDF
|
E43149;
LR26550
latching relay
12v dc relay 8 pin
12V RELAY PIN DIAGRAM
5 pin relay 12v
5 V DC RELAY
ac relay
Matsushita polarized relay 7 pin
RELAY 1500 V LR26550
TF224
8 pin SMD relay
|
Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR td tr 1.8 tf IB1=IB2=IC/10 ns 1.6 VCE=-10V 160 1.4 ts 140 ns 1.2 1200 120 1.0 1000 100 0.8 tr td 20 IC/IB=10 0.001 0.01 0.1 1 10 C ABSOLUTE MAXIMUM RATINGS. 40 200 E FZT649 FZT749 B IC/IB=100 0.2 C tf 60 600
|
Original
|
PDF
|
OT223
IC/10
FZT649
FZT749
100ms
|
SGS ISOWATT221
Abstract: SGSF313 SGSF313PI
Text: SGSF313 SGSF313PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY 450V VCEO VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT IC = 2.5A, IB1 = 0.5A, VBEoff = -5V LOW SATURATION VOLTAGE COMPLETE CHARACTERIZATION AT 100 oC
|
Original
|
PDF
|
SGSF313
SGSF313PI
ISOWATT220
E81734
SGSF313
SGSF313PI
O-220
ISOWATT220
SGS ISOWATT221
|
SGS ISOWATT221
Abstract: SGSF313 SGSF313PI SGSF 495 tf 164
Text: SGSF313 SGSF313PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY 450V VCEO VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT IC = 2.5A, IB1 = 0.5A, VBEoff = -5V LOW SATURATION VOLTAGE COMPLETE CHARACTERIZATION AT 100 oC
|
Original
|
PDF
|
SGSF313
SGSF313PI
ISOWATT220
E81734
SGSF313
SGSF313PI
O-220
ISOWATT220
SGS ISOWATT221
SGSF 495
tf 164
|
transistor ad 1v
Abstract: SGSF313
Text: SGSF313 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ HIGH VOLTAGE CAPABILITY 450V VCEO VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT IC = 2.5A, IB1 = 0.5A, VBEoff = -5V LOW SATURATION VOLTAGE COMPLETE CHARACTERIZATION AT 100 oC
|
Original
|
PDF
|
SGSF313
O-220
transistor ad 1v
SGSF313
|
c5368
Abstract: transistor npn C536 2SC5368
Text: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V
|
Original
|
PDF
|
2SC5368
c5368
transistor npn C536
2SC5368
|
Untitled
Abstract: No abstract text available
Text: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V
|
Original
|
PDF
|
2SC5368
|
C5368
Abstract: 2SC5368 transistor npn C536 transistor C536
Text: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • High speed: tr = 0.5 s max , tf = 0.3 μs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V
|
Original
|
PDF
|
2SC5368
C5368
2SC5368
transistor npn C536
transistor C536
|
c5368
Abstract: transistor npn C536 transistor C536 2SC5368 C536* transistor
Text: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • High speed: tr = 0.5 s max , tf = 0.3 μs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V
|
Original
|
PDF
|
2SC5368
c5368
transistor npn C536
transistor C536
2SC5368
C536* transistor
|
c5368
Abstract: No abstract text available
Text: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V
|
Original
|
PDF
|
2SC5368
c5368
|
c5351
Abstract: 2SC5351
Text: 2SC5351 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5351 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • High speed: tr = 0.5 s max , tf = 0.3 μs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V
|
Original
|
PDF
|
2SC5351
c5351
2SC5351
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION 2-03.5 + 0.2 Repetitive Peak Off-State Voltage V d RM = 4500V Note 1 l T ( R M S ) = 1200A(Tf=77°C) R.M.S On-State Current l R ( R M S ) = 900A(Tf=77°C)
|
OCR Scan
|
PDF
|
SGR3000GXH26
|
|
|
toshiba gto
Abstract: GTO 100A 500V gto 100A GTO thyristor SGR3000GXH26 300a 1500v thyristor 300a 1000v thyristor 100a 1000v GTO GTO thyristor 4500V 4000A
Text: TOSHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM —4500V Note 1 R.M.S On-State Current It (RMS)= 1200A (Tf = 77°C) R.M.S Reverse Current I r (RMS) —900A (Tf = 77°C)
|
OCR Scan
|
PDF
|
SGR3000GXH26
toshiba gto
GTO 100A 500V
gto 100A
GTO thyristor
SGR3000GXH26
300a 1500v thyristor
300a 1000v thyristor
100a 1000v GTO
GTO thyristor 4500V 4000A
|
TF2 RELAY
Abstract: TF2-12V TF224
Text: TF SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS UL File No.: E43149; CSA File No.: LR26550 • High sensitivity: 80 mW Nominal operating power Single side stable 3-12 V type • Surge voltage withstand: 1500 V FCC Part 68 • Minimal magnetic interference allows high density mounting
|
OCR Scan
|
PDF
|
E43149;
LR26550
TF2-12V
TF2 RELAY
TF2-12V
TF224
|
NEC D 809 F
Abstract: NEC D 809 L transistor NEC D 986 E7138
Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm
|
OCR Scan
|
PDF
|
NE713
E71383B
NE71383B]
NE71300]
NEC D 809 F
NEC D 809 L
transistor NEC D 986
E7138
|
d191
Abstract: X2D11
Text: 40 E RO HM CO LTD . VTRÆJ IC /IC s for VTR Applications 7 ô 5 ô cl cn » S SRHÏ1 BU2770S — BU27703 ÜQQM6 ? ^ — "7 = 7 7 -2 j VTR Digital Servo • BU2770S (Í, VTFKD-tf-tf v X f A S 1 í 'f J F í ^ ü í S l / ’D im ension s (U n it : m m ) T'ÍSfiST'
|
OCR Scan
|
PDF
|
BU2770S
BU27703
42pin
d191
X2D11
|
Untitled
Abstract: No abstract text available
Text: SGSF313 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . HIGH VOLTAGE CAPABILITY 450V VCEo . VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT lc = 2.5A, Ibi = 0.5A, VBEoff = -5V . LOW SATURATION VOLTAGE . COMPLETE CHARACTERIZATION AT 100 °C APPLICATION
|
OCR Scan
|
PDF
|
SGSF313
|
wehrmacht
Abstract: Scans-0018019 RD12
Text: LORENZ RD12 Tf 7 5 W a tt- S e n d e trio d e fü r D e z im e te rw e lle n V o rlä u fig e A n g a b e n Angaben für Wehrmachtsentwicklungen sind den „Vorläufigen Technischen Lieferbedingungen für die Röhre RD 12 Tf" TL 24 b/7055 herausgegeben vom O.K.H. am 20. 11. 41 zu entnehmen.
|
OCR Scan
|
PDF
|
b/7055
wehrmacht
Scans-0018019
RD12
|
BM11117
Abstract: TMP87PH48 TMP87PH48DF TMP87PH48U TOYOCOM PM48F
Text: TOSHIBA TMP87PH48/PM48 CMOS 8 b f ' y h V ' f ? n = l > h n - 7 TMP87PH48U/DF, TMP87PM48U/DF TMP87PH48 fä 128 K fcf y h , TMP87PM48 fä 256 K tf -y h <D 7 > 9 A PROM £ M L * ÜJÜ, Î b f l t ë 8fcf -7 h V > 7 ° ^ 4 ï U a y }¿ 3- - ? -Ü\ x * ROMPan OTMP87CH48/CM48 1 tf > n >
|
OCR Scan
|
PDF
|
TMP87PH48/PM48
TMP87PH48U/DF,
TMP87PM48U/DF
TMP87PH48
TMP87PM48
TMP87CH48/CM481
TMP87CH48/CM48
TMP87PH48/PM48fi,
TC57256ADh
TMP87PH48U
BM11117
TMP87PH48DF
TMP87PH48U
TOYOCOM
PM48F
|
SGRB000GXH26
Abstract: 4500V 900A GTO thyristor 4500V 4000A
Text: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)
|
OCR Scan
|
PDF
|
SGRB000GXH26
SGR3000GXH26)
SGRB000GXH26
4500V 900A
GTO thyristor 4500V 4000A
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG4000GXH26G DATA LOW SNUBBER TYPE SG4000GXH26G Unit in mm INVERTER APPLICATION Repetitive Peak off-state Voltage V d RM = 4500V (Note 1) R.M.S On-State Current IT (RMS) = 1200A (Tf = 76°C)
|
OCR Scan
|
PDF
|
SG4000GXH26G
SG4000GXH26G)
SG4000GXH26G
|
87CH46
Abstract: 87PH46N TMP87PH46N 32768kHz TMP87PH47LU TMP87PH47U BM1193 87c846 TMP87
Text: TOSHIBA TM P87PH46/47/47L CMOS 8 b f ' y h V ' f ? n = l > h n - 7 TMP87PH46N, TMP87PH47Uf TMP87PH47LU 8 7 P H 4 6 / 4 7 / 4 7 L i á 1 2 8 K fcf y n > tf a. - * T* , 87P H 46N 8 7 C 4 4 7 /8 4 7 /H 4 7 /8 4 7 L /H 4 7 L ¿ h 7 > iä ^ * X tf > a A PR O M
|
OCR Scan
|
PDF
|
PH46/47/47L
TMP87PH46N,
TMP87PH47U#
TMP87PH47LU
87PH46/47/47L
87PH46N
87C446/846/H46
87PH47/47L
87C447/847/H47/847L/H47L
87C446/846/H46/447/847/H47/847L/H47L
87CH46
TMP87PH46N
32768kHz
TMP87PH47U
BM1193
87c846
TMP87
|
