tf 216 10a 250v
Abstract: W01-01H 10Amp 250V Thermal CUTOFF K10B-142 thermal cutoff fuse 5050 ir led tf 77 10a 250v thermal-cutoff K10B-103
Text: Type K10B Thermal Cutoff Temperature rated Fuse 10Amp Axial Leaded www.optifuse.com (619) 593-5050 Ratings: Ampere Rating: 10A Axial Leaded Voltage Rating: 250V AC Agency Standards and Listings: Part Number K10B-077 K10B-087 K10B-094 K10B-099 K10B-103 K10B-113
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10Amp
K10B-077
K10B-087
K10B-094
K10B-099
K10B-103
K10B-113
K10B-116
K10B-121
K10B-128
tf 216 10a 250v
W01-01H
10Amp 250V
Thermal CUTOFF
K10B-142
thermal cutoff fuse
5050 ir led
tf 77 10a 250v
thermal-cutoff
K10B-103
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usw-1
Abstract: thermal cutoff fuse USW-104T USW-122T USW-110T f 161 USW-139T USW-102T USW-109T USW-108T
Text: Thermal cutoff fuse. USW-1 U.S. Electronics Inc Thermal Cutoff Fuses Ph: 314 423 7550 USW-1 SERIES Fax: (314) 423 0585 TEMPERATURE Part No. Tf Cutoff Temperature Th USW-102T 72°C(161.6°F) 70°C+2°C-2°C 47°C(116.6°F) USW-105T 77°C(170.6°F) 76°C+0°C-4°C
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USW-102T
USW-105T
USW-109T*
USW-104T
USW-108T*
USW-110T*
USW-111T
USW-115T
USW-129T
10tion
usw-1
thermal cutoff fuse
USW-104T
USW-122T
USW-110T
f 161
USW-139T
USW-102T
USW-109T
USW-108T
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IRFD224
Abstract: No abstract text available
Text: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer
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IRFD224
RFD224
IRFD224
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IRFD224
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω
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IRFD224
IRFD224
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mosfet 20a 300v
Abstract: fmi20n50e
Text: FMI20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMI20N50E
mosfet 20a 300v
fmi20n50e
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fmh20n50e
Abstract: No abstract text available
Text: FMH20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMH20N50E
fmh20n50e
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fmp20n50e
Abstract: No abstract text available
Text: FMP20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMP20N50E
O-220AB
fmp20n50e
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mosfet 20a 300v
Abstract: No abstract text available
Text: FMC20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMC20N50E
mosfet 20a 300v
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Untitled
Abstract: No abstract text available
Text: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer
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IRFD224
08-Mar-07
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IRFD224
Abstract: 90165
Text: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer
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IRFD224
12-Mar-07
IRFD224
90165
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DF184S
Abstract: DF128S SDF DF141S DF170S tf 216 10a 250v DF240S E117626 DF141S DF66S DF216S
Text: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts
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E117626
JET2926-32001-1001-1009
HH05009-2004A-2019A
2010/Nov
DF184S
DF128S
SDF DF141S
DF170S
tf 216 10a 250v
DF240S
E117626
DF141S
DF66S
DF216S
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DF216S
Abstract: DF98S DF280S
Text: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts
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E117626
JET2926-32001-1001-1009
HH05009-2004A-2019A
2013/Feb
DF216S
DF98S
DF280S
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FMV20N50E
Abstract: No abstract text available
Text: FMV20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMV20N50E
O-220F
FMV20N50E
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Thermal Cutoff Fuses
Abstract: tf 115 250v 2a thermal fuse 115 250V 2A thermal fuse 5A 250VAC 150C thermal-cutoff thermal fuse 115 thermal cutoff fuse tf 115 250v 15a USW-110T Thermal Cutoffs
Text: Thermal cutoffs Thermal Cutoff Fuses U.S. Electronics Inc Ph: 314 423 7550 USW SERIES Fax: (314) 423 0585 PRODUCTS USW -1 Series USW-2 Series OVERVIEW The thermal cutoffs (TCO) are non resetting, thermally sensitive, single pole, normally closed devices and
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22mH 400v inductor
Abstract: IRFB16N50K TO-220aB DIODE 11A
Text: PD - 95855A IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive
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5855A
IRFB16N50K
O-220AB
O-220AB
22mH 400v inductor
IRFB16N50K
TO-220aB DIODE 11A
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035H
Abstract: IRFP23N50L IRFPE30
Text: PD - 94230 SMPS MOSFET IRFP23N50L HEXFET Power MOSFET Applications VDSS RDS on typ. l Switch Mode Power Supply (SMPS) 500V 0.190Ω l UninterruptIble Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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IRFP23N50L
170ns
O-247AC
O-247AC
IRFPE30
035H
IRFP23N50L
IRFPE30
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tf 216 10a 250v
Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
Text: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly
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TJ142D
TJ152D
TJ78D
TJ99D
tf 216 10a 250v
DYE*TCO
DF184S
ISO 8015 tolerance
DYE DF84S
ISO 8015
tf 115 250v 15a
DF240S
250V 10A TF 106
thermoresistor
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IRFB16N50K
Abstract: No abstract text available
Text: PD - 95855 IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive
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IRFB16N50K
O-220AB
O-220AB
IRFB16N50K
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Untitled
Abstract: No abstract text available
Text: PD - 95855A IRFB16N50K SMPS MOSFET Applications l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits VDSS RDS(on) typ. 285m: 500V Benefits l l l l Low Gate Charge Qg results in Simple Drive
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5855A
IRFB16N50K
O-220AB
08-Mar-07
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B1470
Abstract: K775 mitsubishi MOSFET F3005 FS20KM5 FS20KM-5 MAX240 MITSUBISHI MOSFET FS
Text: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 1 0 ± 0 .3 • V d s s . 2 .8 ± 0 . 2 250V • rDS ON (MAX) . 0 .1 9 Q
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FS20KM-5
-220FN
T0-220S,
MAX240Â
MAX60S
O-220,
O-220FN,
O-220C,
O-220S
B1470
K775
mitsubishi MOSFET
F3005
FS20KM5
FS20KM-5
MAX240
MITSUBISHI MOSFET FS
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sgsp473
Abstract: RS2040 sgsp573 SGSP477
Text: S G S-THOMSON G?E J> g 7^5^53? dOl?^ ^ g : 73C 17426 D /•3^13 \{\l% S6SP473/P573 1 n Pi N-OHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIOIMS These products are diffused m ulti-cell silicon gate N-Channel enhancement mode Power-Mos field e ffect transistors.
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S6SP473/P573
SGSP477/P577
OT-93
SGSP473
SGSP573
SGSP477
SGSP577
C-155
0Q17c
SGSP473/P573
RS2040
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IRF624
Abstract: RG-185 9472
Text: PD-9.472B International S Rectifier IRF624 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V R DS on = 1 - 1 ^ lD = 4.4A Description Third Generation HEXFETs from International Rectifier provide the designer
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IRF624
O-220
IRF624
RG-185
9472
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IRFI624G
Abstract: diode IN 34A
Text: International S Rectifier PD-9.833 IRFI624G HEXFET P ow er M O S F E T • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage D¡st,= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss = 250V ^DS on lD = 3.4A
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IRFI624G
O-220
IRFI624G
diode IN 34A
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D64VS3
Abstract: D64VS5 in5626 2N6676 D64VS4
Text: HIGH VOLTAGE/HIGH SPEED D64VS3 ,4,5 NPN POWER TRANSISTORS 300-400 VOLÍt S 15 AMP, 195 WATTS JEDEC EQUIVALENT - 2N6676, 77, 78 The D64VS series of N P N power transistors is designed for use in power switching applications requiring high-voltage capability, fast switching speeds and low-saturation voltages.
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2N6676,
D64VS
D64VS3
D64VS5
in5626
2N6676
D64VS4
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