BA1310
Abstract: BAI310 560mVrms 3AA1
Text: . R .o h m QUALITY- RELIABILITY BA i 310 ;l. s P L L JjxK ft iStifFI L t FM 7 JU9 J U v ? ^ (Physical Dimensions U /j f S f c H & B ilC r ? « P L L # j£ t f)fc tfK æ¿ft u % r - r « £ fcs * n « . s . b < K t < r o • « ft (Features) j. PLi.-^^vlîîFnwrwiHiffêv ; i / ; ^ b
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BA1310
BAI310(
10KHz
19KHz
38KHz
560mV
BA1310
BAI310
560mVrms
3AA1
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DSX151G
Abstract: No abstract text available
Text: CRYSTAL RESONATORS SMD Type H ll£tS !!7K IiJS i!i? DSX151G SERIES □ S X I5 lG iz K IltlS ]T -£ tfK U /c tz ^5 + 4 7 The DSX151G is a compact product featuring high resistance to the environment, out standing stability and high reliability. Xs DV/K-Xu
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DSX151G
DSX151GA
DSX151GS
60Qmax.
200sec
rCl83'
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tfk 914
Abstract: TFK 914 D transistor 81 120 w 63 cmi Transistor Mt 100
Text: A tfK Q M m an A M P com pany Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2-1.4 GHz PH1214-30EL V2.00 820 Features • • • • • • • • C20B3 NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d Class C O p e ra tio n
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PH1214-30EL
C20B3)
PH1214-30EL
tfk 914
TFK 914 D
transistor 81 120 w 63
cmi Transistor Mt 100
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Untitled
Abstract: No abstract text available
Text: Toggle sw itch e s TL FE A T U R E S G v tfK c d to m - s - s m • FnvYorm C fitiXoo f sealing • • 1,2, an d 4 p o tc cvcvfty. • Standard ondpvQ to unlock fevers. • 2 an d 3 po sitio n , m atototo* ct an d m o m entary toggle actio n • Temperaturerange: -6 5 "F lo +1&TF
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11GVDC
arr08-l25
Hp-125VAC;
amps-125
amps-120
Hp-125
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TFK U B
Abstract: R75n
Text: Thh dD«urn«n1 re t h i pr«p«rty «f A m pha io l C w p a n rlk n and fs d*nv«r«d an R E V IS IO N S +h« e xp ress c an dR ia n m o i fh ¡e r o + +a be tfk c b s a d , rap ra dM csd o r u s s d . In whale o r In pari, ta r manu Tod urs ar M l« by « ny«i» al hcr m an Am phm nl
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HK2571
5/29/D3
RWC-1600-001
TFK U B
R75n
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transistor Bc 540
Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Text: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt
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TFK 450 B2
Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
Text: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W
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TFK 1n4148
Abstract: TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk
Text: VISHAY ▼ Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Although every effort has been made to assure accurate and reliable substitutions, Vishay Telefunken assumes
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1N3600
1N3604
1N4148
1N914
1N4150
1N4151
1N4153
1N4154
TFK 1n4148
TFK BAV20
TFK BAV21
1N53488
bzx850
BZX85g
BZV85-C6V8 vishay
1N458A substitution
BZXB4-C51
1N4148 tfk
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42t sot-23
Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen
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BCW61B
BCX716
BCX71J
BCW60
42t sot-23
BCD Schalter
TFK BB
transistor BC 458
BCX 458
TFK AF
tfk s 154 p
am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716
tfk 715
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TFK BC
Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:
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BC108
BC109
TFK BC
TFK 110
TFK 309
TFK 727
tfk 4 309
tfk 238
BC109
tfk bc108
BC107
TFK 330
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fr 309
Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Text: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen
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BC179
fr 309
BC307
BC177
BC179
BC 179
BC308
BC 307
bc 308
BC309
tfk 731
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B861
Abstract: TFK S 1 86 P
Text: 3 TM2S DRAKJM3 iS LNPISLJSHED. C0PYR2GHT IS Sf AMP JhCORPCW/MfD. D A AMP J4?J-â ftfV 03WAY94 i_X-JUN-96 15i58r25 oqpZMSJ /fJl^dâpttt23/d^]?23Aj.Æipoi«r/U,i?jfc*-d fiC 1 2 REVISIONS b 86 E R E V IS E D £ REDRAWN PER 0 7 2 0 - 0 8 5 6 - 3 5 17JUNSE QfCS WJV
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15i58r25
pttt23/d^
17JUNSE
07hEftWJS£
-B-S25
B861
TFK S 1 86 P
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TFK um 175
Abstract: tfk 635
Text: Temic S e m i c o n d u c t o r s Tape and Reel Standards T EM IC offers T-l 3 mm and T-I-V4 (5 mm) IR em itters and detectors packaged on tape. The follow ing specifica tion is based on IEC publication 286. taking into account the industrial requirem ents for autom atic insertion.
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BA532
Abstract: IS002 BA521U BA-532 ba521
Text: 1 3 .2 V • BA521U, t -ZV7i. ft - 7 > 7 ” Physical Dimensions) IC'C^o 6W O-y AO-iM v h /\° 7 I fflic ¡ft St L A : • - 5 .8 W BA521 QUALITY RELIABILITY ì f i U G O £ t -, -f=?* y yO *: - * K (!£•(£ : imi) 3.6±C.2 M (Features) 1. ^ m * 5 .8 W (T M D = IO % )x ,V:;ii!i!>(r>5dB)T'«te^„
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BA521U,
J-XBA511A,
BA532.
-68fl
BA532
IS002
BA521U
BA-532
ba521
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ic ta 7699
Abstract: 2SB176 2SB172 2SB177 TC 4863 GE PNP ALLOY JUNCTION
Text: 2 SB17 2 , 2 SB1 76, 2SB177 2SB172, 2SB176, 2SB177 2SB177: PNP ^ /M A IN T E N A N C E PNP Alloy Junction Power Amplifier 4$ ^ /F e a tu r e s • B y^"C 0.4W "fo • 0. 4 W output in class B push-pull amplifier tk'k'M tfk /A b solu te Maximum Ratings (Ta=25°C)
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2SB172,
2SB176,
2SB177
2SBi77:
2SB172
2SB176
2SB172
ic ta 7699
2SB176
2SB177
TC 4863
GE PNP ALLOY JUNCTION
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tfk 731
Abstract: TFK BPW 41 N 74140 CQY 38 CQY 66 Fotodiode TFK 925 diode tfk diode s .* tfk Scans-0010327
Text: CQY 38 H 'W GaUliumarsenid-Lumineszenzdiode GaAs Infrared Emitting Diode Anwendung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere Merkmale: Features: • Metallsockel mit Kunststofflinse • Metal base with plastic lens
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EF50
Abstract: No abstract text available
Text: PHILIPS EF50 PENTODE for use as wide band and measuring amplifier PENTHODE pour utilisation comme amplificatrice à large bande et de mesure PENTODE zur Verwendung als Breitband- und Messver stärker Heating: indirect by A.C. or D.C.; parallel supply Chauffage: indirect par C.A. ou C.C.;
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transistor BF 257
Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
Text: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität
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TFK 715
Abstract: BAW56S
Text: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363
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Q62702-A1253
OT-363
100ns,
TFK 715
BAW56S
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Diode BAY 54
Abstract: tfk 341 Diode BAY 74 TFK 68 diode Diode BAY 45 TFK 341 T 74340 TFK 101 bay 68 diode Diode BAY 68
Text: BAY 68 - BAY 69 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Sehr schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions in mm 01.9 KATHODE CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight
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TFK u 116
Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
Text: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW
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BYV16
Abstract: BYV 200v BYW 56 V BYV12
Text: BYV12 ST BYV16 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z. B. für zeilenfrequenten Betrieb im Fern sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode
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BYV12
BYV16
BYV16
BYV 200v
BYW 56 V
BYV12
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rjr ce
Abstract: BD170 Scans-0010668 BD 166, 168, 170 bd166 JEDECTO126 BD169 BD - 100 V
Text: BD166 • BD168 • BD170 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: • Verlustleistung 20 W Features: • Power dissipation 20 W
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N125A
150mA
500mA
500mA
rjr ce
BD170
Scans-0010668
BD 166, 168, 170
bd166
JEDECTO126
BD169
BD - 100 V
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Untitled
Abstract: No abstract text available
Text: o CO CO o Material and Finish 4 Insulator: 0 High Temp., UL94V-0-Rated *-N CO Contact: Phosphor Bronze O 3. Contact Plating Options: Standard: Gold flash on contact area, tin on soldertails, all over nickel underplate 10 CNI T- 10 30 Option: 30u" Gold on contact area,
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UL94V-0-Rated
2002/95/EC
E134345
LR78160
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