Untitled
Abstract: No abstract text available
Text: TFR4N,TFR4T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR4N, TFR4T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.3 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 4 µs
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TFR4N
Abstract: No abstract text available
Text: TFR4N,TFR4T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR4N, TFR4T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.3 A · Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V · Reverse Recovery Time: trr = 4 µs
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Untitled
Abstract: No abstract text available
Text: TFR4N,TFR4T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR4N, TFR4T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.3 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 4 µs
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Untitled
Abstract: No abstract text available
Text: TFR4N,TFR4T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR4N, TFR4T Strobo Flasher Applications fast recovery • Average Forward Current: IF (AV) = 0.3 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 4 µs
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000707EAA1
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Untitled
Abstract: No abstract text available
Text: TFR4N,TFR4T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR4N,TFR4T Strobe Applications Fast Recovery • Unit: mm Average forward current: IF (AV) = 0.3 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 4 µs
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DIODE i2t
Abstract: No abstract text available
Text: TFR4N,TFR4T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR4N,TFR4T Strobe Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.3 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 4 µs
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Untitled
Abstract: No abstract text available
Text: TFR4N,TFR4T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR4N,TFR4T Strobe Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.3 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 4 µs
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zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:
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BCE0001A
BCE0001B
zener diode 1NU 9F
diode 1NU
DLA DIODE TOSHIBA
diode 1NU 7.1
NH5 Diode
Schottky diode TO220 15A 1000V
diode 1NU 5.1
diode 1NU 6F
10lc48
GU 1R5
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S6A35
Abstract: SF3G42 SF10JZ47 S6785G SF3J42 1R5GU41 S6A37 SCR S6A37 GT8G132 SM3GZ47
Text: [ 9 ] 応用回路例 [ 9 ] 応用回路例 1. スイッチング電源 1 自励式シングルフライバック方式 (RCC) 応用回路例 交 交流入力 二次整流 ダイオード 流 フィルタ + 直流出力 − 差動増幅 回 路 駆動用
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AC100
1JU42
AC200
05NU42
CMS04,
CMS05
5FWJ2CZ47M
5FWJ2C48M
10FWJ2CZ47M
10FWJ2C48M
S6A35
SF3G42
SF10JZ47
S6785G
SF3J42
1R5GU41
S6A37
SCR S6A37
GT8G132
SM3GZ47
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SR400FV-70
Abstract: SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Text: - M m s SR400FH-60 SR400FV-70 SR400FV—80 SRH25C SWH2-16 SWH2-20 SWH2-25ED SffH-08 SWH-10 SWHD2-16 SWHD2-20 SWHD2-25 S*HD3-16 SWHD3-20 T51A T51B T51C T52A T52B T52C TD-13 TD-15 TD-15H TFR1L TFR1N TFR1Q TFR1T TFR2L TFR2N TFR2Q TFR2T TFR4L TFR4N TFR4Q TFR4T
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SR400FK-60
SR400FV-70
SR400FV-80
SRH25C
SWH2-16
SWH2-25ED
SKH-08
HI539
EI540
E1542
SR400FV-80
SRH25C
SWH-10
SWH2-16
SWH2-25ED
SWHD2-16
SWHD2-20
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6B4B41
Abstract: 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42
Text: Rectifiers Average Forward Current «- General Purpose Rectifiers High-Speed Rectifiers -> Peak Repetitive Reverse Voltage Average Forward Current <- \ A \ Package trr 100V 400V 600V C2.F2 1000V 1500V 0.2A DO-41 S 1.5 ms TFR3N TRF3T 0.3A DO-41 SS 4 ms TFR4N
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DO-41
DO-15
D041SS
6B4B41
1J4B41
1B4B41
6J4B41
6G4B41
1G4B41
4b4b41
4G4B41
10G4B41
15B4B42
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TFR4N,TFR4T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR4N, TFR4T Unit in mm STROBO FLASHER APPLICATIONS FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time ÏF (AV) = 0.3 A V r r m = 1000, 1500 V
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TFR4N,TFR4T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR4N, TFR4T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward Current : Ip (AV) —0.3A • Repetitive Peak Reverse Voltage : V rrm = 1000, 1500V • Reverse Recovery Time
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26MIN.
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TFR4N,TFR4T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR4N, TFR4T STROBO FLASHER APPLICATIONS. FAST RECOVERY Unit in mm • Average Forward Current : Ijr (AV) = 0.3A • Repetitive Peak Reverse Voltage : Vr rm = 1000, 1500V • Reverse Recovery Time
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1ZB36
Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
Text: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47
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15J4B42
160G2G43
160L2G43
160Q2G43
160U2G43
160DL2C41A
16FL2C41A
16DL2CZ47A
16FL2CZ47A
1B4B41
1ZB36
2z47
1J4B41
1B4B42
100L6P43
1Z16
6G4B41
3Z150
30L6P45
10GL2CZ
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SWH2-16
Abstract: TVRIG SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-25ED SWHD2-16 SWHD2-20
Text: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250
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SR400FK-60
SR400FV-70
SR400FV-80
SRH25C
SWH2-16
SWH2-25ED
SKH-08
SWH2-16
TVRIG
SR400FV-80
SRH25C
SWH-10
SWH2-25ED
SWHD2-16
SWHD2-20
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SRH25C
Abstract: nl 545 SR400FV-70 SR400FV-80 SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Text: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250
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SR400FK-60
SR400FV-70
SR400FV-80
SRH25C
SWH2-16
SWH2-25ED
SKH-08
SRH25C
nl 545
SR400FV-80
SWH-10
SWH2-16
SWH2-25ED
SWHD2-16
SWHD2-20
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TVR2D
Abstract: GT 50 30M 20E SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Text: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250
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SR400FK-60
SR400FV-70
SR400FV-80
SRH25C
SWH2-16
SWH2-25ED
SKH-08
TVR2D
GT 50 30M 20E
SR400FV-80
SRH25C
SWH-10
SWH2-16
SWH2-25ED
SWHD2-16
SWHD2-20
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c 335 16k
Abstract: IS4550 SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Text: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250
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SR400FK-60
SR400FV-70
SR400FV-80
SRH25C
SWH2-16
SWH2-25ED
SKH-08
c 335 16k
IS4550
SR400FV-80
SRH25C
SWH-10
SWH2-16
SWH2-25ED
SWHD2-16
SWHD2-20
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TVR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR4J, TVR4N Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • • • Repetitive Peak Reverse Voltage : V r r m = 600, 1000 V Average Forward Current : If (AV) = 1.2 A (Ta = 55°C)
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TVR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR4J, TVR4N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Unit in mm Repetitive Peak Reverse Voltage : Vrrm = 600, 1000V Average Forward Current : Ip(AV) = 1-2A (Ta = 55°C)
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SR400FV-80
Abstract: SR400FV-70 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Text: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250
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SR400FK-60
SR400FV-70
SR400FV-80
SRH25C
SWH2-16
SWH2-25ED
SKH-08
--16MAXâ
S3B20
S3B100
SR400FV-80
SRH25C
SWH-10
SWH2-16
SWH2-25ED
SWHD2-16
SWHD2-20
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TVRIG
Abstract: SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Text: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250
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SR400FK-60
SR400FV-70
SR400FV-80
SRH25C
SWH2-16
SWH2-25ED
SKH-08
TVRIG
SR400FV-80
SRH25C
SWH-10
SWH2-16
SWH2-25ED
SWHD2-16
SWHD2-20
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3-3F2A
Abstract: TFR4N
Text: SILICON DIFFUSED TYPE FAST RECOVERY DIODE STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward C urrent Repetitive Peak Reverse Voltage Reverse Recovery Time U n it in m m !F(AV) =0.3A V r r m = 1 ° oo . 1500V } 1 tj-j-= 4 //S 2 a<o M A X IM U M RATING
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