Untitled
Abstract: No abstract text available
Text: Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch Recessed V ^ m gate structure Description
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TGA8300
18-GHz
18-dBm
TGA8300
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R , I N C TGA8300-SCC 2 to 18GHz Fr equency Range 20-dBm Typical Output Power at 1-dB Gain Compression 7.5-dB Typical Gain Input/Output SWR 1.5:1 On-Chip Blocking Capacitor Allows Easy Cascading # 2,362 x 1,625 x 0,152 mm 0.093 x 0.064 x 0.006 in.
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TGA8300-SCC
18GHz
20-dBm
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Untitled
Abstract: No abstract text available
Text: S E M I C TGA8300-SCC O N D U C Gain Block Amplifier O 2to 18GHz Fr equency Range T O R , I N C 8300 20-dBm Typical Output Power at 1-dB Gain Compression # 7.5-dB Typical Gain Input/Output SWR 1.5:1 On-Chip Blocking Capacitor Allows Easy Cascading # 2,362 x 1,625 x 0,152 mm 0.093 x 0.064 x 0.006 in.
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TGA8300-SCC
18GHz
20-dBm
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Untitled
Abstract: No abstract text available
Text: T R I Q U I N T S E M I TGA8300- SCC C O N D U C Gain Block Amplifier ● ● ● ● ● ● 2 to 18- GHz Fr equency Range T O R , I N C . 8300 20- dBm Typical Output Power at 1 -dB Gain Compr ession 7.5- dB Typical Gain Input/Output SWR 1.5:1 On - Chip Blocking Capacitor Allows Easy Cascading
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TGA8300-
TGA8300
18-GHz.
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TGA8300-SCC
Abstract: 5.5 GHz power amplifier
Text: Microwave/Millimeter-Wave Products TGA8300-SCC 2 – 18 GHz Gain Block Amplifier The TriQuint TGA8300-SCC is a GaAs monolithic distributed amplifier designed for use as a multi-octave, general-purpose gain block. Four 189 µm gate-width FETs provide 7.5 dB nominal gain and 5.5 dB noise figure
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TGA8300-SCC
TGA8300-SCC
TGA8310-SCC
5.5 GHz power amplifier
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TGA8300
Abstract: 12-GHz
Text: A D V A N C E I N F O R M A T I O N Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ o 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch
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TGA8300
18-GHz
18-dBm
TGA8300
189-jum
TGA8300-S
12-GHz
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Untitled
Abstract: No abstract text available
Text: T R I Q U I N T S E M I TGA8300- SCC C O N D U C Gain Block Amplifier ● ● ● ● ● ● 2 to 18- GHz Fr equency Range T O R , I N C . 8300 20- dBm Typical Output Power at 1 -dB Gain Compr ession 7.5- dB Typical Gain Input/Output SWR 1.5:1 On - Chip Blocking Capacitor Allows Easy Cascading
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GP 023 DIODE
Abstract: Three bond tga8300-scc
Text: TGA8300-SCC 2- TO 18-GHz AMPLIFIER A PP R O V AL 4356 • 20-dBm Typical Output Power at 1-dB Gain Compression • 7.5-dB Typical Gain • Input/Output SWR 1.5:1 • On-Chip Blocking Capacitor Allows Easy Cascading • Size: 2,362 x 1,625 x 0,152 mm 0.093 x 0.064 x 0.006 inch
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TGA8300-SCC
18-GHz
20-dBm
GP 023 DIODE
Three bond
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TGA8300-SCC
Abstract: TGA8300
Text: T R I Q U I N T S E M I TGA8300- SCC C O N D U C Gain Block Amplifier ● ● ● ● ● ● 2 to 18- GHz Fr equency Range T O R , I N C . 8300 20- dBm Typical Output Power at 1 -dB Gain Compr ession 7.5- dB Typical Gain Input/Output SWR 1.5:1 On - Chip Blocking Capacitor Allows Easy Cascading
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TGA8300-
TGA8300
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet November 21, 2002 2 - 20 GHz Power Amplifier TGA8334-SCC Key Features and Performance • • • • • • • 2 to 20 GHz Frequency Range 0.4-W Output Power at 1 dB Gain Compression at Midband Positive Gain Slope Across Frequency On-Chip Input DC-Blocking Capacitor
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TGA8334-SCC
TGA8334-SCC
600um
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VCT 492 x
Abstract: TGA8220-SCC TGA8300-SCC TGA8334-SCC TGA8622-SCC
Text: Product Data Sheet 2 - 20 GHz Power Amplifier TGA8334-SCC Key Features and Performance • • • • • • • 2 to 20 GHz Frequency Range 0.4-W Output Power at 1 dB Gain Compression at Midband Positive Gain Slope Across Frequency On-Chip Input DC-Blocking Capacitor
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TGA8334-SCC
TGA8334-SCC
600um
25-mil-length
VCT 492 x
TGA8220-SCC
TGA8300-SCC
TGA8622-SCC
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TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint
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cus937
TGA2517
TQP6M9002
TQM653029
TGS4304
SG-O1-16
TGA2503
TAT7469
TGA9092-SCC
854651
AH125
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Untitled
Abstract: No abstract text available
Text: Texas Instruments TGA8220 Monolithic Distributed 2- to 18-GHz Amplifier Features • 0.3-watt output power at 1-dB gain compression ■ 2:1 input/output SWR ■ Via grounds ■ Size: 0.131 x 0.074 x 0.006 inch Description The Texas Instruments TGA8220 is a GaAs
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TGA8220
18-GHz
TGA8220
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tga8300-scc
Abstract: No abstract text available
Text: Product Data Sheet April 25, 2003 2 - 20 GHz Power Amplifier TGA8334-SCC Key Features and Performance • • • • • • • 2 to 20 GHz Frequency Range 0.4-W Output Power at 1 dB Gain Compression at Midband Positive Gain Slope Across Frequency On-Chip Input DC-Blocking Capacitor
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TGA8334-SCC
TGA8334-SCC
600um
TGA8334
27dBm
39dBm.
tga8300-scc
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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Untitled
Abstract: No abstract text available
Text: Power Amplifier TGA8334-SCC 2 to 20-GHz Frequency Range 0.4-W Output Power at 1-dB Gain Compression at Midband Positive Gain Slope Across Frequency On-Chip Input DC-Blocking Capacitor 1.8:1 Input SWR at Midband, 1.3:1 Output SWR at Midband 8-dB Gain with ± 1-dB Flatness
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TGA8334-SCC
20-GHz
TGA8334-SCC
26-dBm
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Untitled
Abstract: No abstract text available
Text: TGA8220-SCC DISTRIBUTED 2- TO 18-GHz AMPLIFIER A PP R O V AL 5026 • Positive Gain Slope • 26-dBm Typical Output Power at 1-dB Gain Compression • 6-dB Typical Gain • 1.6:1 Typical Input/Output SWR • Size: 3,327 x 1,880 x 0,152 mm 0.131 x 0.074x0.006 in
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TGA8220-SCC
18-GHz
26-dBm
074x0
GMGS023A
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gmna002
Abstract: TGA8220-SCC TGA8300-SCC TGA8622-SCC
Text: TGA8220-SCC Power Amplifier ● ● ● ● ● ● 8220 Distributed 2 to 18-GHz Frequency Range Positive Gain Slope 26-dBm Typical Output Power at 1-dB Gain Compression 6-dB Typical Gain 1.6:1 Typical Input/Output SWR 3,327 x 1,880 x 0,152 mm 0.131 x 0.074 x 0.006 in.
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18-GHz
26-dBm
TGA8220-SCC
13-dB.
gmna002
TGA8300-SCC
TGA8622-SCC
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531 amplifier
Abstract: 14 Ghz microwave transceiver power amplifier s band ghz mhz 10 ghz gain block
Text: Component Selection Guide RF Wireless Communications Products Part Description TQ9114 TQ9121 TQ9122 TQ9132 30 – 500 MHz IF/AGC Amplifier 1.2 – 1.6 GHz Low-Noise Amplifier 500 – 2500 MHz Low-Noise Amplifier 800 – 2500 MHz 50-mW Driver Amplifier Gain dB
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50-mW
DCS-1800
GA1110E-20
GA1210E-20
531 amplifier
14 Ghz microwave transceiver
power amplifier s band ghz mhz
10 ghz gain block
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fet amplifier schematic
Abstract: FET differential amplifier circuit TGA8300-SCC gaas mesfet "design kit" GaAs MESFET amplifier high power fet amplifier schematic monolithic amplifier 11 MONOLITHIC AMPLIFIERS MESFET Application fet differential amplifier schematic
Text: 0.5-µm Intermediate-Profile, High-Current MesFET IPHC Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.5-µm 2MI Process Cross Section
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TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4
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DALLAS 2501
Abstract: TGA8622SCC TL 2521
Text: TGA8334-SCC 2- TO 20-GHz POWER AMPLIFIER APPROVAL 5026 • 0.4-W Output Power at 1-dB Gain Compression at Midband • Positive Gain Slope Across Frequency • On-Chip Input DC-Blocking Capacitor • 1.8:1 Input SWR at Midband, 1.3:1 Output SWR at Midband •
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TGA8334-SCC
20-GHz
125x0
26-dBm
DALLAS 2501
TGA8622SCC
TL 2521
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet April 25, 2003 2 - 20 GHz Power Amplifier TGA8334-SCC Key Features and Performance • • • • • • • 2 to 20 GHz Frequency Range 0.4-W Output Power at 1 dB Gain Compression at Midband Positive Gain Slope Across Frequency On-Chip Input DC-Blocking Capacitor
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TGA8334-SCC
TGA8334-SCC
600um
TGA8334
27dBm
39dBm.
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