THE 2003 IS A COMMON BASE TRANSISTOR Search Results

THE 2003 IS A COMMON BASE TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
SSM10N961L	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TMPM3HMFYAFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003
TMPM3HPFYADFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001

THE 2003 IS A COMMON BASE TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2 watt rf transistor Abstract: No abstract text available Text: 2003 3 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor is	Original	55BT-1, 2 watt rf transistor	PDF
Untitled Abstract: No abstract text available Text: MMBTSC2712LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features ˙High voltage and high current: VCEO=50V, IC=150mA max	Original	MMBTSC2712LT1 150mA OT-23 Junctio30	PDF
Untitled Abstract: No abstract text available Text: MMBTSC2712LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features ˙High voltage and high current: VCEO=50V, IC=150mA max	Original	MMBTSC2712LT1 150mA OT-23	PDF
all transistor book Abstract: mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free transistor and ic equivalent data transistor number code book FREE transistor data book free free download transistor and ic equivalent data Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1999 Aug 16 2003 Apr 15 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A	Original	M3D259 BLS3135-50 BLS3135-50 OT422A BLS313550 all transistor book mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free transistor and ic equivalent data transistor number code book FREE transistor data book free free download transistor and ic equivalent data	PDF
Untitled Abstract: No abstract text available Text: MMBTSA1298LT1 PNP Silicon Epitaxial Planar Transistor for low frequency power amplifier and power switching applications The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors manufactured in different pin configurations.	Original	MMBTSA1298LT1 OT-23	PDF
Untitled Abstract: No abstract text available Text: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA	Original	MMBTSA1505LT1 -400mA OT-23	PDF
Untitled Abstract: No abstract text available Text: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA	Original	MMBTSA1505LT1 -400mA OT-23	PDF
cw 7808 Abstract: BLF0810-180 7808 voltage regulator MDB162 BLF0810S-180 MDB161 gp 538 e/ic 7808 pin out Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 Philips Semiconductors Product specification Base station LDMOS transistors BLF0810-180; BLF0810S-180	Original	M3D379 M3D461 BLF0810-180; BLF0810S-180 SCA75 613524/06/pp16 cw 7808 BLF0810-180 7808 voltage regulator MDB162 BLF0810S-180 MDB161 gp 538 e/ic 7808 pin out	PDF
transistor SMD Z2 Abstract: 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain	Original	M3D438 BLA1011-2 OT538A SCA75 R77/05/pp9 transistor SMD Z2 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 PINNING - SOT538A FEATURES • High power gain	Original	M3D438 BLA1011-2 OT538A SCA75 R77/05/pp9	PDF
st 8050d Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As	Original		PDF
st 8050d Abstract: 8050 TRANSISTOR PNP BR 8050 BR 8050 D transistor br 8050 st8050c st 8050C 8050 pnp transistor NPN transistor 8050d 8050D Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As	Original		PDF
st 8050d Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As	Original		PDF
st 8050d Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As	Original		PDF

cw 7808 Abstract: TRANSISTOR CW 7808 7808 voltage regulator 7808 cw MDB172 BLF0810-90 BLF0810S-90 MDB177 top 8901 gp 647 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 Philips Semiconductors Product specification Base station LDMOS transistors BLF0810-90; BLF0810S-90	Original	M3D379 M3D461 BLF0810-90; BLF0810S-90 SCA75 613524/03/pp16 cw 7808 TRANSISTOR CW 7808 7808 voltage regulator 7808 cw MDB172 BLF0810-90 BLF0810S-90 MDB177 top 8901 gp 647	PDF
2SD965 Abstract: C8010 2sd965 transistor Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SD965 2SD965 C8010 2sd965 transistor	PDF
2sd965 Abstract: C8010 C5001 Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SD965 2sd965 C8010 C5001	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 PINNING - SOT467C FEATURES • High power gain	Original	M3D381 BLA1011-10 OT467C SCA75 R77/05/pp9	PDF
BLA1011-10 Abstract: 200B Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain	Original	M3D381 BLA1011-10 OT467C SCA75 R77/05/pp9 BLA1011-10 200B	PDF
2SD965 Abstract: 2sd965 transistor r10100 C8010 2SD965P Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SD965 2SD965 2sd965 transistor r10100 C8010 2SD965P	PDF
2sd965 transistor Abstract: 2SD965 2SD96 Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SD965 2sd965 transistor 2SD965 2SD96	PDF
MBL105 Abstract: mbl10 top 8901 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Preliminary specification 2003 Sep 22 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF900-110; BLF900S-110 FEATURES APPLICATIONS	Original	M3D379 M3D461 BLF900-110; BLF900S-110 SCA75 613524/03/pp14 MBL105 mbl10 top 8901	PDF
acrian RF POWER TRANSISTOR Abstract: Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc Text: 0 1 8 2 9 9 8 ACRI'AN. INC h, Hü Æ& GENERAL T? SPI ÜP D E ;\| 0 1 0 2 ^ 0 ^!jjj\|jjjgjgg 0DD1403 4 J ^0 \|j\|ijj\|jUp*^ 2003 D E S C R IP T IO N The 2003 is a common base transistor capable of providing 3 Watts of C W RF output power in the 1000-2000 MHz. This hermetically sealed transistor is specifically designed for	OCR Scan	0DD1403 Vcb-28V Ic-100mA Tf-25Â acrian RF POWER TRANSISTOR Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc	PDF
2SC383TM Abstract: 2SC388ATM 2SC388A S100 transistor 025-12S Text: TO SH IB A 2SC383TM,388ATM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 8 3 T M , TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hjrE ' 2 S C 3 8 8 A T M U nit in mm MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC383TM 2SC383TM 388ATM 2SC388ATM SC-43 45MHz 2SC388A S100 transistor 025-12S	PDF

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THE 2003 IS A COMMON BASE TRANSISTOR Search Results

THE 2003 IS A COMMON BASE TRANSISTOR Result Highlights (5)

THE 2003 IS A COMMON BASE TRANSISTOR Datasheets Context Search

2 watt rf transistor

Untitled

Untitled

all transistor book

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Untitled

Untitled

cw 7808

transistor SMD Z2

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st 8050d

st 8050d

st 8050d

st 8050d

cw 7808

2SD965

2sd965

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BLA1011-10

2SD965

2sd965 transistor

MBL105

acrian RF POWER TRANSISTOR

2SC383TM