Untitled
Abstract: No abstract text available
Text: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has
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Untitled
Abstract: No abstract text available
Text: NIP-54021 Thee Dual Du Dua u a l Ports P 10GBASE-T 1 0G 10GBA 10G 0GBA GBA A SE-T ASE-T E-T -TT Network N Neet eetwork rkk Module Modul Mo od d u l e with wit ith h Intel In Intttel® elll® ® X540 X5 X 540 0 LAN LA L N Controller C Co ontrol o ntr on ntrolle r
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NIP-54021
10GBASE-T
10GBA
NIP-54021,
EtherNIP-54021,
AI3-3289
X540-AT2
10GbE
X540-AT2
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78l05f
Abstract: 78L05L 78L08F 78L12F 78L06F 78lxx sot N78L05 N78L08 ksd 180 78L15L
Text: S SN78Lxxxx 3 Term minal Posittive Voltagee Regulatorr Semiconductor Deescription n httpp:// www.auk.co.kr Thee SN78Lxxx series s are threee-terminal possitive regulato ors providing oveer 150mA outp put current witth internal currrent limiting, thermal shutdown and saffe area protecttion. These reegulators are useful
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SN78Lxxx
SN78Lxxx
150mA
N78Lxxx
KSD-I5B007-001
78l05f
78L05L
78L08F
78L12F
78L06F
78lxx sot
N78L05
N78L08
ksd 180
78L15L
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Untitled
Abstract: No abstract text available
Text: SN N317xx [ 1.5 A Adju ustable Outtput ] Posittive Voltagee Regulatorr Semiconductor Deescription n httpp:// www.auk.co.kr Thee SN317 is an adjustable 3-tterminal posittive voltage reegulator capable of supply ying in excesss of 1.5 A overr an output vo oltage range off 1.2
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N317x
SN317
O-220FT
KSD-I0O009-003
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TGS 880
Abstract: No abstract text available
Text: September 1996 Revision 1.0 DATA SHEET EOB2UV6482- 60/70 TG-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 144-pins, small outline dual-in-line (SO DIMM) memory modules.
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EOB2UV6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
MB81V17805A-
MP-DRAMM-DS-20392-9/96
TGS 880
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Untitled
Abstract: No abstract text available
Text: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS
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IEDM2006,
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Untitled
Abstract: No abstract text available
Text: OSSM SSMA High Frequency For 8oml-Rlgld Cablo Theee OSSM oonneoton operate from do to 40 QHz. The mating Interface la Identioaf to the popular OSSM atendard. The Internal deelqn haa been modified to eliminate the propagation of higher order modee below 40
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14MHMI
600-386-22M
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ic shipping tray
Abstract: BG0505 epak shipping tray MSA-3032 msc 140 -10003 ePAK BG0505 ePAK tray drawing EPAK TRAY 309000
Text: REVISIONS REV i r 00 M a n u f a c t u r in g S ite M a rk in g T e x t p r o t r u s i o n 0.15max DESCRIPTION INITIAL RELEASE DATE APPROVED KK Thee 02/01/10 - 3 2 2 .6 ± 0 .5 L - 3 1 5 .0 ± 0 .5 ( A > 80-ND HDLES (VACUUM PICKUP CELL)
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15nax
MSA-3032.
BG0505
MSC17011
2B4-B200
MSC-5891
ic shipping tray
BG0505 epak
shipping tray
MSA-3032
msc 140 -10003
ePAK
ePAK tray drawing
EPAK TRAY
309000
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78xxC
Abstract: 7815C
Text: * THEEii-TEEHINAL POSITIVE VOLTAGE REGULATOR These voltage regulator are monolithic in tegrated circuits designed as fixed-voltage regulators for a wide variety of applications including local,on-card regulation. These re gulators employ internal current limiting,
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D73ic
78xxC
7815C
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D028
Abstract: simm-30 timing EDI8F3265C25MZI t1is 64KX32 D010 D021 I8F3265C25M jedec 64-pin simm
Text: ELECTRONIC DESIGNS INC 51E 1 • 323D11M Ü001058 Sfl7 H E L D EDI8F3265C T -V i -23-/y ^ E D*slD I Bectrofìlc gra Inc." High Speed Two Megabit SRAM Module 64KX32 Static RAM CMOS, High Speed Module Features TheEDI8F3265Cisahighspeed2megabit Static RAM module organized as 64Kx32. This module is constructed
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3B3011W
EDI8F3265C
64KX32
TheEDI8F3265Cisahighspeed2megabit
64Kx32.
64Kx4StaticRAMsinSOJ
EDI8F3265C
T-46-23-14
EDI8F3265C20MZC
EDI8F3265C25MZC
D028
simm-30 timing
EDI8F3265C25MZI
t1is
D010
D021
I8F3265C25M
jedec 64-pin simm
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Untitled
Abstract: No abstract text available
Text: C 8-BIT PARITY THEE MTTL MC4000 series MC4008L,P* I ADVANCE INFORMATION/NEW PRODUCT This device consists of 9even Exclusive NOR gates con nected to check even parity. The o u tp u t will be in the logic " 1 " state as long as the " 1 " state is present on an even
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MC4000
MC4008L
16-bit
DSP56008
DSP56002
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Untitled
Abstract: No abstract text available
Text: EDI8F321024C ^ E D I 11Q24KX32 SRAM Module EL£CTRüNICDE5lSN&INC 10mx32 Static RAM CHIOS, Hicfi Speed Module Features TheEDI8F321024C is a high speed 32 megabit Static RAM 1024Kx32 bit CMOS Static module organized as 1024K words by 32 bits. This module Random Access Memory
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EDI8F321024C
1024Kx32
10mx32
TheEDI8F321024C
1024K
1024Kx4
f1024C
321024C20M
321024C25M
321024C35IVIN
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EDI8834C45MC
Abstract: EDI8834C-35 EDI8834
Text: ^EDI _ EDI8834C Electronic Detlgru Inc. High Speed Monolithic 256K Static RAM 32Kx8 Static RAM CMOS, Monolithic Features TheEDI8834C isa high perfomance, 262,144bitCMOS Static RAM organized as 32K by 8 bits. Combining high speed with low power, this device is ideal
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EDI8834C
32Kx8
TheEDI8834C
144bitCMOS
EDI8834C
EDI8834C35MC
EDI8834C45MC
EDI8834C35RC
EDI8834C45RC
EDI8834C-35
EDI8834
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EDI7F32256C100BAC
Abstract: No abstract text available
Text: W D EDI7F322S6C I El£CTRONC OE5N5NS INC TheEDI7F32256C, EDI7F232256C are organized as 256Kx 32and2 x 256Kx32 respectively. Both modules are based on ATMELAT29C020 -256Kx 8 Flashdevices iiTSOP packages which are mounted on an FR4 substrate. When deselected, the CMOS standby current is less than
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EDI7F322S6C
TheEDI7F32256C,
EDI7F232256C
256Kx
32and2
256Kx32
ATMELAT29C020
-256Kx
100pAperByte
addresslocatio20
EDI7F32256C100BAC
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DWG-48
Abstract: No abstract text available
Text: REVISIONS REV 22 23 TUBE COLOUR: DESCRIPTION DATE 0 4 /1 5 /1 0 0 5 /0 1 /1 0 TO ALLOW TOP SIDE SURFACE PRINTING REMOVE QUARTER COLOR CODE APPROVED KK Thee KK Thee CLEAR PRINTING COLOUR: BLUE jy NOTES : UNLESS OTHERWISE SPECIFIED 1. ALL DIMENSIONS ARE INCHES, UNLESS OTHERWISE SPECIFIED.
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MSA-3049
0-GT9622
0-GT0896
R1-068-000
OL0-GT9622
MSC-3053
MSC17011
DWG-48
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msc1701
Abstract: P1072 Tube 8750
Text: REVISIONS REV 09 10 TUBE COLOUR: m DESCRIPTION TO INCLUDE YEAR CODE tc QUARTERLY COLOR PRINTING CHANGE BLUE COLOR TO GREEN COLOR FOR 1ST QUARTER DATE APPROVED KK Thee 01 / 2 4 / 0 9 0 5 /2 7 /0 9 KK Thee CLEAR DATE CODE: [Y Y ] Y Y= C a le n d e r Y e a r To Be P rin te d F ro m 2 0 1 0 O nw ard
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p1-072
0-FP9624-11
0-FT1172
R1-072-000
MSC17011
P1-072-
MSC-3081
msc1701
P1072
Tube 8750
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Shipping Tray
Abstract: MSA-3032 1.3208.005
Text: REVISIONS REV 00 01 DESCRIPTION INITIAL RELEASE DATE 10/12/07 APPROVED KK Thee REVISED PHONE NUMBER FOR RECYUNG * ADDED RED TRAY 05/11/09 KK Thee TOLERANCES UNLESS OTHERWISE SPECIFIED DECIMAL ANGLE NOTES : UNLESS OTHERWISE SPECIFIED 1. MATERIAL : PPE+CF (BLACK)
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MSA-3032.
TMHT-131804-01B
TMLT-131804-01B
MSC17011
MSC-5759
Shipping Tray
MSA-3032
1.3208.005
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Kostat tray
Abstract: Kostat kostat 6 x 6 Kostat KS-6120 KS-87063 Kostat tray 2 X 2.5 shipping tray MSC-4901 Kostat 87063 MSA-3032
Text: REVISIONS REV 02 03 D ESC RIP TIO N DATE CHANGE TO 140 deq C TRAY ADDED NEW PACKAGE - LG/LGG 64 APPROVED KK Thee KK Thee 03/28/08 05/20/09 7.62 6.35 DETAIL "F" V - œ i 4x2-R2.54 i T7- EEH 1 £ 7 0.76 - A - TRAY STACKING DETAIL LGA 9.0mm x 9.0mm KS - 87063
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MSC17011
MSC-4901
Kostat tray
Kostat
kostat 6 x 6
Kostat KS-6120
KS-87063
Kostat tray 2 X 2.5
shipping tray
MSC-4901
Kostat 87063
MSA-3032
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PDF
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SUP-P30H-EPR-4
Abstract: SUP-P15H-EPR SUP-P10H-EPR Faston FASTON screw 5A-20A SUP-P20H-EPR
Text: SUP-PH-EPR SERIES NOISE FILTER OKAYA M Features ,1 4 • Super high n material. 20~30dB attenuation at 10kHz, more than 25dB at 1.5kV puls • Thee terminal styles (Faston®, solder and screw). • Bleed resistor for electric shock protection. Safety Agency : Standard
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10kHz,
UL-1283
E78644
8-M1986
LR60681
E/0142-21
1000Vrms
50/60Hz
60sec
2000Vrms
SUP-P30H-EPR-4
SUP-P15H-EPR
SUP-P10H-EPR
Faston
FASTON screw
5A-20A
SUP-P20H-EPR
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Untitled
Abstract: No abstract text available
Text: ^ E D I B^ctronlc D««lgnc Inc. . Â IM IO I D iF O M Â T M Features TheEDI82136Cisa1,179,648bitAsynchroriousmemofy core with transparent address and enable latches in the advanced peripheral circuitry. This device is ideally suited for all x32 and x36 bit wide, high-performance memory sub
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32Kx36
DQ0-DQ31
EDI82136C
EDI82136C12GC
EDI82136C15GC
EDI82136C17GC
EDI82136C20GC
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PDF
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Untitled
Abstract: No abstract text available
Text: cP September 1996 Révision 1.0 ~ DATA SHEET - £ OB2U V6482- 60/70 TG-S 16MByte (2Mx 64) CMOS EDO DRAM Module - 3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
V17805A-
144-pin
158x2
0070x2
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PDF
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Untitled
Abstract: No abstract text available
Text: EDI816256CA-RP jl 256KxW Ruggedized Piasric Sfarle ff am 256KX16 Static RAM CMOS, Monolithic Features TheEDI816256CA is a mggedized plastic 256Kx16 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the
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256KX16
EDI816256CA-RP
256KxW
TheEDI816256CA
6256CA
EDI816256CA2GM44I
EDI816256CA25M44I
EDI816256LPA20IVI44I
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PDF
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EDI444096C
Abstract: No abstract text available
Text: EDI444096C 4Megx4Fast Page DRAM 4 Megabitx 4DynamicRAM 5V, FastPage Features TheEDI444096C is a high performance, low power CMOS Dynamic RAM organized as 4 Megabit x 4. During READ and WRITE cycles each bit is addressed 4 Meg x 4 bit CMOS Dynamic through 22 address bits which are entered 11 at a time A0Random Access Memory
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EDI444096C
TheEDI444096C
A0A10)
24/28Ph
EDI444096C
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CABGA 8X8
Abstract: DAEWON tray drawing 12C-0808-E19 BFG 183 MSA-3032 daewon CABGA daewon tray E261 msc1701 daewon
Text: REVISIONS REV 00 01 DESCRIPTION IN IT IA L R ELEASE A DDED NEW PAC KA G E - — 6,35 DATE 0 1 /1 4 /0 5 APPROVED QUAN LUU 0 4 /2 2 /0 9 KK Thee B F /B F G 81 h0-l Q.gQ H I aTxWI — 7,62 -|Q.gQ(H)|A|Z(l 311.15- +0.25 -0.13 -1 3 2 .0 8 • +0.25 -0.13
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83-lOVS
P7-176-000
MSC-1777
MSC17011
CABGA 8X8
DAEWON tray drawing
12C-0808-E19
BFG 183
MSA-3032
daewon CABGA
daewon tray
E261
msc1701
daewon
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PDF
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