Untitled
Abstract: No abstract text available
Text: Bergquist Thermal Clad Technical Data HT-04503 HIGH TEMPERATURE DIELECTRIC Benefits • Very low thermal resistance of 0.05°Cin2/W (0.32°Ccm2/W) • High thermal conductivity of 2.2 W/m-K • High temperature applications • Lead-free solder compatible
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HT-04503
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comparative tracking index ceramic
Abstract: No abstract text available
Text: Bergquist Thermal Clad Technical Data HT-07006 HIGH TEMPERATURE DIELECTRIC Benefits • Very low thermal resistance of 0.11°Cin2/W (0.71°Ccm2/W) • High thermal conductivity of 2.2 W/m-K • High temperature applications • Lead-free solder compatible
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HT-07006
comparative tracking index ceramic
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UL796
Abstract: No abstract text available
Text: Bergquist Thermal Clad Technical Data HPL-03015 HIGH POWER LIGHTING DIELECTRIC Superior Dielectric Lowers Operating Temperatures Benefits • Very low thermal resistance of 0.02°Cin2/W (0.13°Ccm2/W) • High thermal conductivity of 3.0 W/m-K • High temperature applications
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HPL-03015
UL796
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Untitled
Abstract: No abstract text available
Text: Bergquist Thermal Clad Technical Data MP-06503 MULTI-PURPOSE DIELECTRIC Benefits • Thermal resistance 0.09°Cin2/W (0.58°Ccm2/W) • Thermal conductivity of 1.3 W/m-K • Multi-Purpose applications • Lead-free solder compatible • Eutectic AuSn compatible
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MP-06503
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Untitled
Abstract: No abstract text available
Text: CBM-360 Product Datasheet CBM-360 LEDs Features: • Extremely high optical output: Over 5,000 lumens from a single package white Table of Contents • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 6°C/W Technology Overview . . . . . .2
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CBM-360
PDS-001253
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Untitled
Abstract: No abstract text available
Text: CBM-360 Product Datasheet CBM-360 LEDs Features: • Extremely high optical output: Over 5,000 lumens from a single package white Table of Contents • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 6°C/W Technology Overview. . . . . . 2
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CBM-360
PDS-001253
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DWG-001216
Abstract: CBT-90 NCP15XH103J03RC 6500K
Text: PRODUCT DATA SHEET PhlatLight White LED Illumination Products CBT-90 White Features • Extremely high optical output: Over 2,000 lumens from a single chip White • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 ºC/W
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CBT-90
DWG-001216
NCP15XH103J03RC
6500K
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Untitled
Abstract: No abstract text available
Text: CBT-90-UV-405 Product Datasheet CBT-120 Product PreliminaryPreliminary Datasheet CBT-90-UV-405 LEDs Features: •• >6.5 W of optical power from 400 nm to 410 nm. •• High thermal conductivity package . ›› Junction to heat sink thermal resistance of 0.9 °C/W
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CBT-90-UV-405Product
CBT-120
CBT-90-UV-405
PDS-001xxx
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CBT-120
Abstract: PDS-001226 NCP15XH103J03RC LM2500 cbt-120-g-c11 NCP15XH103J03 KF300 RC11B DF-3 dwg001124
Text: PRODUCT DATA SHEET PhlatLight LED Illumination Products CBT-120 Series Features • Extremely high optical output: Over 1225 Red Lumens Over 2000 Green lumens Over 470 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 0.7 ºC/W
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CBT-120
PDS-001226
NCP15XH103J03RC
LM2500
cbt-120-g-c11
NCP15XH103J03
KF300
RC11B
DF-3
dwg001124
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CF 775
Abstract: cf775 JC200 HC100 NCP15XH103J03RC CBT-40-G-C21-JC200 R5631 A 1050 09
Text: PRODUCT DATA SHEET PhlatLight LED Illumination Products CBT-40 Series Features • Extremely high optical output: Over 310 Red Lumens Over 725 Green lumens Over 150 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 1.8 ºC/W
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CBT-40
CF 775
cf775
JC200
HC100
NCP15XH103J03RC
CBT-40-G-C21-JC200
R5631
A 1050 09
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DWG-001216
Abstract: 001216 NCP15XH103J03RC dj bj 810 215R6 CBT-90 DNG14-250FL
Text: PRODUCT DATA SHEET PRELIMINARY PhlatLight LED Illumination Products CBT-90 RGB Features • Extremely high optical output: Over 810 Red Lumens Over 1800 Green lumens Over 450 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 ºC/W
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CBT-90
DWG-001216
001216
NCP15XH103J03RC
dj bj 810
215R6
DNG14-250FL
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Untitled
Abstract: No abstract text available
Text: M/A-COM Passive Component Division offers a wide selection of metallized 9 9 5 + % alumina AlaOa substrates and aluminum nitride ceramic which is an attractive alternative where power and thermal conductivity are a concern. Polished surfaces of less than one microinch
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Abstract: No abstract text available
Text: AfaCßM Metallized Substrates For Microwave Integrated Circuits M/A-COM offers a wide selection of metallized 995 alumina AI2O3 substrates and aluminum nitride ceramic which is an attractive alternative where power and thermal conductivity are a concern. Polished
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MIL-G-45204
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Untitled
Abstract: No abstract text available
Text: Thick Film Chip Resistor High Power Chip Resistor, wide terminal type Industry/Field: Automotive electronics, Industrial equipment Expansion of products line-up Excellent solder junction and high thermal conductivity with wide terminal • Development Target:
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Abstract: No abstract text available
Text: CBT-90-UV Product Datasheet CBT-120 Product Preliminary CBT-90-UV LEDs Features: • Greater than 6.5 W of optical power from 400 nm to 410 nm. • High thermal conductivity package . › Junction to heat sink thermal resistance of 0.9 °C/W • Luminus Big Chip LED technology for very high power density and uniform surface
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CBT-90-UVProduct
CBT-120
CBT-90-UV
CBT-90
PDS-002171
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tyre pressure sensor
Abstract: "electromagnetic pulse"
Text: Small size – Big performance. Microcircuits for Miniaturisation One of the attributes of microcircuits made on ceramic substrates is that very high performance can be achieved in the smallest of sizes. The inherent strength, thermal conductivity and multilayer capabilities can make a ceramic hybrid circuit the choice for the most demanding
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Untitled
Abstract: No abstract text available
Text: CBT-120-UV CBT-120 Product Product Datasheet CBT-120-UV LEDs Features: •• Over 16.0 W of optical power typical from 382 nm to 392 nm. Table of Contents Technology Overview. . . . . . 2 Binning Structure. . . . . . . . . . 3 •• High thermal conductivity package .
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CBT-120-UVProduct
CBT-120
CBT-120-UV
PDS-001574
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wacker silicone paste
Abstract: silicone paste p 12 IEC 326-3 Wacker Silicones P-12 Wacker Silicones pcb board of miniskiip 2 Wacker miniskiip board SEMIKRON BOARD wacker rubber
Text: MiniSKiiP - Technical Explanations Assembly Instructions 1 Preparation, surface specification To obtain the maximum thermal conductivity of the module, heat sink and module must fulfil the following specifications. 1.1 Heat sink ≤ 20 µm Heat sink > 10 µm
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Untitled
Abstract: No abstract text available
Text: CBT-90-UV Product Datasheet CBT-120 Product Preliminary CBT-90-UV LEDs Features: •• Greater than 6.5 W of optical power from 400 nm to 410 nm. •• High thermal conductivity package . ›› Junction to heat sink thermal resistance of 0.9 °C/W •• Luminus Big Chip LED technology for very high power density and uniform surface
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CBT-90-UVProduct
CBT-120
CBT-90-UV
CBT-90
PDS-002171
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1000H
Abstract: No abstract text available
Text: Crystal Plate Crystal Plate for Projectors • Features ● The crystal plate for projectors is large and transparent, and made of high-quality crystal. ● Excellent heat dissipation due to the high thermal conductivity of crystal. ● Processed at an angle that is not affected by double refraction
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450650nm
1000H
1000H
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hfr 20w
Abstract: RFT250 flange RF termination 50 RFT050 RFT010
Text: High Power Flanged RF Terminators IRC Advanced Film Division RFTXXX-1 Series • Flange contruction • High frequency operation to 5GHz • High power dissipation to 250W • Long life, temperature stable thinfilm technology IRC’s RFTXXX-1 series utilizes the combined benefits of flange cooling and the high thermal conductivity of
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RFT010
RFT010;
RFT050;
RFT100;
RFT250
hfr 20w
RFT250
flange RF termination 50
RFT050
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X-band Gan Hemt
Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Text: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2
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AN-011
AN-011:
X-band Gan Hemt
GaN amplifier
Gan on silicon substrate
rf gan amplifier
MMIC X-band amplifier
x-Band Hemt Amplifier
AlGaN/GaN HEMTs
Gan on silicon transistor
Gan transistor
k 1535
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thermal impedance for IMS
Abstract: AB20-4 International Resistive Company
Text: International Resistive Company Advanced Film Division 4222 South Staples Street Corpus Christi, Texas 78411, USA Telephone: +1 361 992-7900 Facsimile: +1(361)992-3377 Email: morrist@irctt.com Website: www.irctt.com Test Report-AnothermTM vs IMS Substrate in Power LED
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27w/m-
thermal impedance for IMS
AB20-4
International Resistive Company
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thermal conductivity sensor
Abstract: CO826
Text: FOR IMMEDIATE RELEASE, CO826 November 28, 2005 For more information, contact: Tom Morris, Applications Engineering Manager IRC, Inc. 361-985-3140 tom.morris@irctt.com Beth Polizzotto, BtB Marketing 919-872-8172 bpolizzotto@btbmarketing.com LEDs and power components keep cool on new substrate material…
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CO826
thermal conductivity sensor
CO826
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