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    THERMAL CONSIDERATIONS FOR SOT89 IN THE GENERAL Search Results

    THERMAL CONSIDERATIONS FOR SOT89 IN THE GENERAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM2195C2A333JE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    THERMAL CONSIDERATIONS FOR SOT89 IN THE GENERAL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SOT89 MARKING CODE B2

    Abstract: MARKING BL SOT89 Thermal considerations for SOT89 SOT89 Marking Code bl BL MARKING CODE SOT89 BL SOT89 SOT89 MARKING CODE 16 Thermal considerations for SOT89 in the General SOT89 MARKING CODE 26 BST16
    Text: Philips Semiconductors Product specification NPN high-voltage transistors BST39; BST40 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 350 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • General purpose switching and amplification.


    OCR Scan     		BST39; BST40 BST15 BST16. BST39 BST40 MAM296 SOT89 MARKING CODE B2 MARKING BL SOT89 Thermal considerations for SOT89 SOT89 Marking Code bl BL MARKING CODE SOT89 BL SOT89 SOT89 MARKING CODE 16 Thermal considerations for SOT89 in the General SOT89 MARKING CODE 26 BST16 PDF

    marking CAC SOT89

    Abstract: MARKING 93 SOT89 sot89 marking 93 SOT89 transistor marking with lb 135 BC868 BC868-25 BC869 BL SOT89 SOT89 MARKING CODE B2 Thermal considerations for SOT89 in the General
    Text: Philips Semiconductors Product specification NPN medium power transistor BC868 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • General purpose switching and amplification


    OCR Scan     		BC868 BC869. BC868-25 mam296 marking CAC SOT89 MARKING 93 SOT89 sot89 marking 93 SOT89 transistor marking with lb 135 BC869 BL SOT89 SOT89 MARKING CODE B2 Thermal considerations for SOT89 in the General PDF

    Thermal considerations for SOT89 in the General P

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP high-voltage transistors BST15; BST16 FEATURES PINNING • Low current max. 200 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • General purpose switching and amplification.


    OCR Scan     		BST15; BST16 BST39 BST40. BST15 Thermal considerations for SOT89 in the General P PDF

    MARKING BL SOT89

    Abstract: marking AL sot89 BCX51 SOT89 MARKING CODE B2 BCX53 sot89 AE pnp PHILIPS BCX52-10 BCX51-10 BCX51-16 BCX52-16
    Text: Philips Semiconductors Product specification PNP medium power transistors BCX51; BCX52; BCX53 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • ivieaium power general purposes


    OCR Scan     		BCX51 BCX52; BCX53 BCX54, BCX55 BCX56. BCX51 BCX52-16 BCX51-10 MARKING BL SOT89 marking AL sot89 SOT89 MARKING CODE B2 sot89 AE pnp PHILIPS BCX52-10 BCX51-16 PDF

    SOT89 transistor marking with lb 135

    Abstract: SOT89 MARKING CODE B2 MARKING 93 SOT89 MARKING BL SOT89 marking BR4 sot89 marking 93 BR2 SOT89 BSR31 BSR33 BSR41
    Text: Philips Semiconductors Product specification PNP medium power transistors BSR30; BSR31 ; BSR33 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Telephony and general industrial applications


    OCR Scan     		BSR30; BSR31 BSR33 BSR40; BSR41 BSR43. BSR30 BSR31 BSR33 SOT89 transistor marking with lb 135 SOT89 MARKING CODE B2 MARKING 93 SOT89 MARKING BL SOT89 marking BR4 sot89 marking 93 BR2 SOT89 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistors BST39; BST40 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 350 V). 1 emitter 2 collector 3 base APPLICATIONS DESCRIPTION • General purpose switching and amplification.


    OCR Scan     		BST15 BST16. BST39 BST40 BST39; BST40 PDF

    bt1 marking

    Abstract: SOT89 transistor marking with lb 135
    Text: Philips Semiconductors Product specification PNP high-voltage transistors BST15; BST16 FEATURES PINNING • Low current max. 200 mA PIN • High voltage (max. 300 V). 1 emitter 2 collector 3 base APPLICATIONS DESCRIPTION • General purpose switching and amplification.


    OCR Scan     		BST39 BST40. BST15 BST16 BST15; BST16 BST15 BST18 bt1 marking SOT89 transistor marking with lb 135 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN medium power transistor BC868 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). 1 APPLICATIONS DESCRIPTION emitter 2 collector 3 base • General purpose switching and amplification


    OCR Scan     		BC869. BC868 BC868-10 BC868-16 BC868-25 BC868 BC868-25 PDF

    marking code VV transistors

    Abstract: PNP TRANSISTOR "SOT89" marking aa
    Text: Philips Semiconductors Product specification PNP medium power transistors BCX51 ; BCX52; BCX53 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Medium power general purposes


    OCR Scan     		BCX51 BCX52; BCX53 BCX54, BCX55 BCX56. BCX51 BCX51-10 BCX51-16 BCX52 marking code VV transistors PNP TRANSISTOR "SOT89" marking aa PDF

    SOT89 marking cec

    Abstract: BRS32 marking BR2 BSR32 marking BR4
    Text: Philips Semiconductors Product specification PNP medium power transistors FEATURES BSR30; BSR31; BSR32; BSR33 PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Telephony and general industrial applications


    OCR Scan     		BSR30; BSR31; BSR32; BSR33 BSR40; BSR41 BSR42 BSR43. BRS30 BRS31 SOT89 marking cec BRS32 marking BR2 BSR32 marking BR4 PDF

    TRANSISTOR p1p

    Abstract: p1p transistor SOT89 MARKING CODE B2 transistor P1P 4 PXT2222A PXT2907A BL SOT89 MARKING BL SOT89
    Text: Philips Semiconductors Product specification NPN switching transistor PXT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base General purpose switching and linear amplification.


    OCR Scan     		PXT2222A PXT2907A. PXT2222A MLB826 TRANSISTOR p1p p1p transistor SOT89 MARKING CODE B2 transistor P1P 4 PXT2907A BL SOT89 MARKING BL SOT89 PDF

    AAT3200

    Abstract: AAT3201
    Text: AAT3200 OmniPower LDO Linear Regulator General Description Features The AAT3200 PowerLinear™ OmniPower Low Dropout Linear Regulator is ideal for systems where a low-cost solution is required. This device features extremely low quiescent current which is


    Original     		AAT3200 AAT3200 200mV. AAT3201 250mA OT-89 OT23-3 PDF

    Linear Regulator sot-89

    Abstract: AAT3200 AAT3201
    Text: AAT3200 OmniPower LDO Linear Regulator General Description Features The AAT3200 PowerLinear™ OmniPower low dropout LDO linear regulator is ideal for systems where a low-cost solution is required. This device features extremely low quiescent current which is


    Original     		AAT3200 AAT3200 200mV. OT-89 Linear Regulator sot-89 AAT3201 PDF

    AAT3200

    Abstract: AAT3201 Linear Regulator sot-89
    Text: AAT3200 OmniPower LDO Linear Regulator General Description Features The AAT3200 PowerLinear™ OmniPower Low Dropout Linear Regulator is ideal for systems where a low-cost solution is required. This device features extremely low quiescent current which is


    Original     		AAT3200 AAT3200 200mV. OT-89 AAT3201 Linear Regulator sot-89 PDF

    HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E

    Abstract: GH sc-59 to-92 hall sensor ultrasonic range meter IC Ultrasonic welding circuit transistor Common collector configuration thermoset plastics Application Note 27703 HALL EFFECT TO 92 leadframe
    Text: GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING by Peter J. Gilbert Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical effect is combined with modern integrated circuit IC


    Original     		PDF

    Loctite 406

    Abstract: HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E Injection mold foam Ultrasonic welding generator FLEX THERMOSET COMPOUND N140 AH010 N140 ALLEGRO
    Text: Application Note 27703.1† GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING by Peter J. Gilbert Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical


    Original     		PDF

    HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E

    Abstract: hall effect sensor GH SC-59 HALL EFFECT Loctite 406 LT HALL SENSOR to-92 hall sensor Ultrasonic welding circuit
    Text: GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING by Peter J. Gilbert Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical effect is combined with modern integrated circuit IC


    Original     		PDF

    N140 ALLEGRO

    Abstract: Ultrasonic welding generator Allegro Hall-Effect ICs GH SC-59 Loctite 406 pressure low die bond sensor RTV HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E FLEX THERMOSET COMPOUND TO-236A TRA-CON
    Text: Application Note 27703.1‡ GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING by Peter J. Gilbert Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical


    Original     		PDF

    N140 ALLEGRO

    Abstract: HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E Allegro Hall-Effect ICs Ultrasonic welding generator GTS2000
    Text: Application Note 27703.1B GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical effect is combined with modern integrated circuit IC


    Original     		1-508-ALLEGRO N140 ALLEGRO HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E Allegro Hall-Effect ICs Ultrasonic welding generator GTS2000 PDF

    apw 7079

    Abstract: apw7079 APW7079-30 APW7079-18DI APW7079-26DI
    Text: APW7079 Low-Supply-Current Synchronous Step-up DC-DC Converter General Description Features • • • • • 0.9V Typical Start-up Input Voltage The APW7079 is a compact, PFM mode, step-up DC-DC converter with low quiescent current. The internal syn- 11µA Typical No Load Quiescent Current


    Original     		APW7079 APW7079 APW707 apw 7079 APW7079-30 APW7079-18DI APW7079-26DI PDF

    APW7079-30D

    Abstract: j fet sot89 APW7079-30DI APW7079 APW7079-18DI APW7079-30 apw 7079
    Text: APW7079 Low-Supply-Current Synchronous Step-up DC-DC Converter General Description Features • • • • • 0.9V Typical Start-up Input Voltage The APW7079 is a compact, PFM mode, and step-up DC-DC converter with low quiescent current. The inter- 11µA Typical No Load Quiescent Current


    Original     		APW7079 APW7079 MIL-STD-883D-2003 MIL-STD-883D-1005 JESD-22-B MIL-STD-883D-1011 MIL-STD-883D-3015 100mA APW7079-30D j fet sot89 APW7079-30DI APW7079-18DI APW7079-30 apw 7079 PDF

    AAT3200

    Abstract: AAT3201 SC59
    Text: AAT3200 OmniPower LDO Linear Regulator General Description Features The AAT3200 PowerLinear OmniPower low dropout LDO linear regulator is ideal for systems where a low-cost solution is required. This device features extremely low quiescent current, typically


    Original     		AAT3200 AAT3200 200mV. OT-89 AAT3201 SC59 PDF

    APL5601-33A

    Abstract: APL5601 APL5601R APL5602 62RX APL5602R APL5601R-50A 30A sot-89 apl56 voltage regulator sot 223
    Text: APL5601/5601R/5602/5602R Low Dropout 600mA Fixed Voltage Linear Regulator Features General Description • Low Dropout Voltage: 220mV typical @600mA • Wide input voltage from 2.9V~6V • Low Quiescent Current: 140µA • Fixed Output Voltage with 2% accuracy


    Original     		APL5601/5601R/5602/5602R 600mA 220mV 600mA OT23-3, OT223 APL5601/5601R/5602/5602R APL5601-33A APL5601 APL5601R APL5602 62RX APL5602R APL5601R-50A 30A sot-89 apl56 voltage regulator sot 223 PDF

    AAT3220

    Abstract: SC59 ez* 5v
    Text: AAT3220 150mA NanoPower LDO Linear Regulator General Description Features The AAT3220 PowerLinear NanoPower low dropout LDO linear regulator is ideal for portable applications where extended battery life is critical. This device features extremely low quiescent current, typically 1.1µA. Dropout voltage is also very


    Original     		AAT3220 150mA AAT3220 225mV 150mA. OT-89 SC59 ez* 5v PDF