Untitled
Abstract: No abstract text available
Text: Agilent EEsof EDA W2349EP/ET ADS Electro-Thermal Simulator Data Sheet Temperature-Aware Circuit Simulation for RFIC and MMIC Design As higher power devices are integrated into smaller packages, thermal issues cause performance degradation, reliability problems, and even failures. Modeling thermal
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W2349EP/ET
5991-1522EN
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TDA4601
Abstract: BY295 BY258 TDA 4601 BY258/200 tda 2032 C2540 i c tda 4601 voltage TDA4601B 4601
Text: TDA4601 SWITCH-MODE POWER SUPPLY CONTROLLER . . . LOW START-UP CURRENT DIRECT CONTROL OF SWITCHING TRANSISTOR COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT REVERSE-GOING LINEAR OVERLOAD CHARACTERISTIC CURVE SIP9 Plastic Package ORDER CODE : TDA4601
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TDA4601
TDA4601
TDA4601B
DIP18PW
PMDIP18W
BY295
BY258
TDA 4601
BY258/200
tda 2032
C2540
i c tda 4601 voltage
TDA4601B
4601
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TRANSISTOR MARKING YB
Abstract: TSFP-4 BFP405F CJE marking diode
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
100MHz.
EHA07307
Dec-07-2001
TRANSISTOR MARKING YB
TSFP-4
BFP405F
CJE marking diode
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marking ams
Abstract: TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07
Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420F
100MHz.
EHA07307
Dec-07-2001
marking ams
TRANSISTOR MARKING YB
BFP420F
EHA07307
transistor bI 240
nh TRANSISTOR
DEC07
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an9922
Abstract: mlf 0.3mm pitch JESD51-3 JESD51-5 JESD51-7 MO220 TB379
Text: Thermal Characterization and Board Level Modeling of the RSLIC18 in the MLFP Package TM Application Note October 2001 AN9922 Author: Doug Bruss Introduction In most circuit designs realestate is a premium. This is especially true for the new generation of Home
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RSLIC18
AN9922
CH-1009
an9922
mlf 0.3mm pitch
JESD51-3
JESD51-5
JESD51-7
MO220
TB379
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TRANSISTOR MARKING FA
Abstract: EHA07307 CJE marking diode
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
TRANSISTOR MARKING FA
EHA07307
CJE marking diode
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EHA07307
Abstract: CJE marking diode
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
EHA07307
CJE marking diode
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Untitled
Abstract: No abstract text available
Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420F
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55 ic Sot-343
Abstract: marking 17 sot343 START499ETR st P 1806 START499E start499etr spice
Text: START499ETR NPN RF silicon transistor Features • High efficiency ■ High gain ■ Linear and non linear operation ■ Transition frequency 42 GHz ■ Ultra miniature SOT-343 SC70 lead free package SOT-343 Applications ■ PA for dect or PHS ■ PA stage for wireless LAN
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START499ETR
OT-343
START499ETR
OT-343
55 ic Sot-343
marking 17 sot343
st P 1806
START499E
start499etr spice
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Untitled
Abstract: No abstract text available
Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420F
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TRANSISTOR MARKING YB
Abstract: BFP405F marking al
Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
100MHz.
EHA07307
May-29-2001
TRANSISTOR MARKING YB
BFP405F
marking al
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7661 infineon
Abstract: BFP420F
Text: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP420F
7661 infineon
BFP420F
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BFP405F
Abstract: BFP420F
Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP405F
BFP405F
BFP420F
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BFP420F
Abstract: No abstract text available
Text: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP420F
BFP420F
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BFP405F
Abstract: BFP420F TSFP-4
Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP405F
BFP405F
BFP420F
TSFP-4
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TRANSISTOR MARKING YB
Abstract: BFP420F MARKING 1G TRANSISTOR
Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420F
100MHz.
EHA07307
May-29-2001
TRANSISTOR MARKING YB
BFP420F
MARKING 1G TRANSISTOR
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74ls111
Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 hitachi mosfet audio application note 74ls221 Spice 74LS123 spice 2sk2685 spice spice 74ls00
Text: INDEX GENERAL General Information Sales Locations Semiconductor Packages FLAT PANEL CONTROLLER / DRIVER Liquid Crystal Display Controller MICROCONTROLLER Microcontroller General Micro. Shortform Micro. Overview Micro. Hardware Manual Micro. Program. Manual
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Switchin2SC3512
2SC3513
2SC3793
2SC3867
2SC4126
2SC4196
2SC4197
2SC4260
2SC4261
2SC4262
74ls111
2SA872 spice
74LS122 spice model
hitachi mosfet power amplifier audio application
BC240
hitachi mosfet audio application note
74ls221 Spice
74LS123 spice
2sk2685 spice
spice 74ls00
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LDMOS PA Driver IC, Motorola
Abstract: MHVIC910HR2 AN1949 RO4350
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1949/D AN1949 Mounting Method for the MHVIC910HR2 PFP-16 and Similar Surface Mount Packages Prepared by: Wendi Stemmons, Richard Wetz, Mahesh Shah, Eddie Mares, Jin–Wook Jang and Lynn Frye
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AN1949/D
AN1949
MHVIC910HR2
PFP-16)
LDMOS PA Driver IC, Motorola
MHVIC910HR2
AN1949
RO4350
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VMMK-2303
Abstract: VMMK-2503 microwave propagation VMMK-2203 VMMK-2403 ka band gaas fet Package E-band mmic ka band lna VMMK-2103 VMMK-2x03
Text: GaAs-Based Surface Mount Wafer Scale Package MMICs for DC to 45 GHz Applications White Paper By: Henrik Morkner I. Introduction Packaging has always been the “Achilles Heal” of extracting the maximum microwave performance out of any IC technology. The inherent parasitic capacitance and inductance associated with bond wires, lead frames, and
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800MHz
AV02-2103EN
VMMK-2303
VMMK-2503
microwave propagation
VMMK-2203
VMMK-2403
ka band gaas fet Package
E-band mmic
ka band lna
VMMK-2103
VMMK-2x03
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FG676
Abstract: PCB footprint cqfp 132 741 smd ic cb228 footprint PCB footprint cqfp 100
Text: DataSource CD-ROM Q1-02 Contents Packaging and Thermal Characteristics Package Drawings Thermal Application Note Package Information Package Electrical Characterization Component Mass by Package Type Thermally Enhanced Packaging Moisture Sensitivity Tape and Reel
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Q1-02
TQ100
TQ128
TQ144
TQ176
VQ100
FG676
PCB footprint cqfp 132
741 smd ic
cb228 footprint
PCB footprint cqfp 100
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infineon AN077
Abstract: AN077 BFR193L3 BFR380L3
Text: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package
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BFR380L3
infineon AN077
AN077
BFR193L3
BFR380L3
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Untitled
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package
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BFR380L3
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Untitled
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package
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BFR380L3
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NTE7154
Abstract: I2 200-5 transistor 1005 oj
Text: NTE7154 Integrated Circuit Control Circuit for Switch Mode Power Supplies using MOS Transistors Description: The NTE7154 is an integrated circuit in an 8–Lead DIP type package which controls the MOS power transistor and performs all necessary regulation and monitoring functions in free running flyback converters. Since good load regulation over a wide load range is attained, this device is particularly suitable for consumer as well as industrial power supplies.
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NTE7154
NTE7154
I2 200-5
transistor 1005 oj
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