Untitled
Abstract: No abstract text available
Text: Datasheet R2A20056BM Lithium-Ion Battery Charger IC with Auto Load Current Distribution R03DS0075EJ0100 Rev. 1.23 Apr 15,2013 Description R2A20056BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC. Built-in Input current limitation circuit compliant with USB requirements and dual output system and battery
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R2A20056BM
R03DS0075EJ0100
R2A20056BM
mA/1000mA/1500mA/1800mA/Limitless/Suspend
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Untitled
Abstract: No abstract text available
Text: Datasheet R2A20057BM Lithium-Ion Battery Switching Charger IC with Auto Load Current Distribution R03DS0069EJ0100 Rev.1.00 Mar 1, 2013 This is a target specification. Some specs are subject to change. Description R2A20057BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC.
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R2A20057BM
R03DS0069EJ0100
R2A20057BM
TH05-3H103F
NCP15WF104F03RC
R03DS0069EJ0100
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TH05-3H103F
Abstract: OF IC 7812 cv R2A20057BM R2A200 R03DS0069EJ0050 TH053H103F ADR05H
Text: Preliminary Datasheet R2A20057BM Lithium-Ion Battery Switching Charger IC with Auto Load Current Distribution R03DS0069EJ0050 Rev.0.50 Dec 10, 2012 This is a target specification. Some specs are subject to change. Description R2A20057BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC.
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R2A20057BM
R03DS0069EJ0050
R2A20057BM
TH05-3H103F
OF IC 7812 cv
R2A200
TH053H103F
ADR05H
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the
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S7960/S7961-1008
S7960/S7961-1008
SE-171
KMPD1034E06
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S7960-1008
Abstract: S7961-1008
Text: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the
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S7960/S7961-1008
S7960/S7961-1008
SE-171
KMPD1034E07
S7960-1008
S7961-1008
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the
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S7960/S7961-1008
S7960/S7961-1008
SE-171
KMPD1034E06
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1008 transistor
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the
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S7960/S7961-1008
S7960/S7961-1008
SE-171
KMPD1034E08
1008 transistor
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S7171-0909
Abstract: S8844-0909
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
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S8844-0909
SE-171
KMPD1056E02
S7171-0909
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
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S8844-0909
S8844-0909
SE-171
KMPD1056E02
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
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S8844-0909
S8844-0909
SE-171
KMPD1056E04
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Untitled
Abstract: No abstract text available
Text: TSF70 Series Compact External Mount with Temperature Sensing Compact design with temperature sensing Available in Nylon, Polypropylene or PPS 25VA & 100VA versions Many variants are UL recognised components File No. E171218 WRAS Approved versions Technical Specification
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TSF70
100VA
E171218
TSF74
ISO9001
M16x2
TSF76
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S9972/S9973 series Front-illuminated FFT-CCD, high IR sensitivity S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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SE-171
KMPD1092E03
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
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S8844-0909
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KMPD1056E03
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
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S8844-0909
SE-171
KMPD1056E01
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s7172
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7170-0909, S7171-0909 512 x 512 pixels, Back-thinned FFT-CCD Hamamatsu developed Multi Pin-Phase MPP mode back-thinned FFT- CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well as having low dark current and wide
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S7170-0909,
S7171-0909
S7171-0909
S7171-0909,
S7172-0909)
SE-171
KMPD1028E06
s7172
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Untitled
Abstract: No abstract text available
Text: TSF40 Series Compact Internal Mount with Temperature Sensing Compact design with temperature sensing Available in Nylon, Polypropylene or PPS 25VA & 100VA versions Many variants are UL recognised components File No. E171218 WRAS Approved versions Technical Specification
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TSF40
100VA
E171218
ISO9001
TSF46
M16x2
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S9972/S9973 series Front-illuminated FFT-CCD, high IR sensitivity S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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KMPD1092E02
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S9972
Abstract: S9972-1007 S9972-1008 S9973-1007 DNA 1005
Text: IMAGE SENSOR CCD area image sensor S9972/S9973 series Front-illuminated FFT-CCD, high IR sensitivity S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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SE-171
KMPD1092E03
S9972
S9972-1007
S9972-1008
S9973-1007
DNA 1005
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7170-0909, S7171-0909 512 x 512 pixels, Back-thinned FFT-CCD Hamamatsu developed Multi Pin-Phase MPP mode back-thinned FFT- CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well as having low dark current and wide
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S7171-0909
S7171-0909
S7171-0909,
S7172-0909)
SE-171
KMPD1028E04
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PDF
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S7170-0909
Abstract: S7171-0909
Text: IMAGE SENSOR CCD area image sensor S7170-0909, S7171-0909 512 x 512 pixels, Back-thinned FFT-CCD Hamamatsu developed Multi Pin-Phase MPP mode back-thinned FFT- CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well as having low dark current and wide
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S7170-0909,
S7171-0909
S7171-0909
S7171-0909,
S7172-0909)
SE-171
KMPD1028E05
S7170-0909
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S9970/S9971 series Front-illuminated FFT-CCD S9970/S9971 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S9970/S9971 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
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KMPD1089E02
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M1120
Abstract: weinschel thermistor F1119 bolometer f1120
Text: Wcinschel Models 1119, 1119H & 1120 100 kHz to 4.2 GHz COAXIAL POWER STANDARDS THERMISTOR MOUNTS MODEL 1119 (FEEDTHROUGH MOUNT) MODEL 1119H (100 mW FEEDTHROUGH MOUNT) NIST Calibrated or Traceable Weinschel Models 1119,1119H, and 1120 Temperature Stabilized Coaxial Power Standards enable precise
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1119H
1119H,
1119H
1120SWR
F1119)
F1119H)
F1120)
M1120
weinschel thermistor
F1119
bolometer
f1120
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1807a
Abstract: bolometer F1119C
Text: _ We|nsch£l Model Fl 119C lOO kHz to 4.2 GHz Model 1807A o.oi to 18 GHz RF TRANSFER STANDARD Feed-through Models F1119C and 1807A are Thermistor Mount/Power S plitte r com binations (with test port) used as a feedthrough standard for the calibration of terminating
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F1119C
F1119CSg
1807a
bolometer
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S7961-1008
Abstract: thermoelectric peltier S7960-1008 cp1h
Text: IMAGE SENSOR CCD area image sensor S7960/S7961 -1008Z; •■ -.'■ .•“ i Back-thinned FFT-CCDs for high-speed applicatjpS S 7 9 6 0 /S 7 9 6 1 -1 0 0 8 a re F F T -C C D im a ge s e n so rs s p e c ific a lly d e s ig n e d fo r high sp e e d o p e ra tio n . By e m p lo yin g a w id e b and w id th o n -ch ip
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S7960/S7961
S7960/S7961-1008
SE-171
MPD1034E01
S7961-1008
thermoelectric peltier
S7960-1008
cp1h
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