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    THN5601B Search Results

    THN5601B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    THN5601B AUK SiGe NPN Transistor Original PDF
    THN5601B Tachyonics NPN SiGe RF POWER TRANSISTOR Original PDF

    THN5601B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd transistor zl

    Abstract: rf transistor mar 8 DRF1401 THN5601B
    Text: THN5601B NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application.


    Original
    THN5601B THN5601B OT-223 900MHz Mar-22-2005 100nF 100pF smd transistor zl rf transistor mar 8 DRF1401 PDF

    R1401

    Abstract: THN5601B
    Text: THN5601B Semiconductor SiGe NPN Transistor □ Applications Unit in mm SOT-223 o VHF and UHF band medium power amplifier 6.5 3.0 4 □ Features 3.5 7.0 o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz 1 o GP = 8.5 dB at f = 900 MHz 2 3 2.3 0.7 4.6 Pin Configuration


    Original
    THN5601B OT-223 THN5601 R1401 THN5601B PDF

    transistor 2SC5066

    Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
    Text: Cross Reference RF Product Cross Reference Tachyonics THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z THN4201E THN4201KF THN4201U THN4301E THN4301KF THN4301U THN4501E THN4501KF THN4501U THN6201E THN6201KF THN6201S THN6201U


    Original
    THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z transistor 2SC5066 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450 PDF

    R1401

    Abstract: FR4 dielectric constant 4.6 THN5601B 1695 GP 1 JS 0746 gp 738
    Text: THN5601B Semiconductor SiGe NPN Transistor □ Applications Unit in mm SOT-223 o VHF and UHF band medium power amplifier 6.5 3.0 4 □ Features 3.5 7.0 o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz 1 o GP = 8.5 dB at f = 900 MHz 2 3 2.3 0.7 4.6 Pin Configuration


    Original
    THN5601B OT-223 THN5601 R1401 FR4 dielectric constant 4.6 THN5601B 1695 GP 1 JS 0746 gp 738 PDF