Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CR12CM-12A R07DS1035EJ0300 Previous: REJ03G0350-0200 Rev.3.00 Feb 25, 2013 600V - 12A - Thyristor Medium Power Use Features • Non-Insulated Type Planar Passivation Type IT (AV) : 12 A VDRM : 600 V IGT : 30 mA Outline
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CR12CM-12A
R07DS1035EJ0300
REJ03G0350-0200)
PRSS0004AG-A
O-220AB)
PRSS0004AA-A
O-220)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CR12CM-12A R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A
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CR12CM-12A
R07DS1035EJ0400
PRSS0004AG-A
O-220AB)
PRSS0004AA-A
O-220)
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PDF
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DTM12C-N
Abstract: DTM12E-N DTM12G-N DTM12-N
Text: Ordering number:EN1880B DTM12-N Silicon Planar Type 12A Bidirectional Thyristor Features Package Dimensions • Insulation type. · Peak OFF-state voltagte : 200 to 600V. · RMS ON-state current : 12A. · TO-220 package. unit:mm 1144 [DTM12-N] * : The gate trigger mode is shown below.
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EN1880B
DTM12-N
O-220
DTM12-N]
DTM12C-N
DTM12E-N
DTM12G-N
1mst10ms
f50Hz,
DTM12C-N
DTM12E-N
DTM12G-N
DTM12-N
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T12A6CI
Abstract: No abstract text available
Text: T12A6CI SEMICONDUCTOR Bi-Directional Triode Thyristor 12A Mold TRIAC TECHNICAL DATA AC POWER CONTROL APPLICATION. A C DIM A B C D E F P F U FEATURES E S B ᴌRepetitive Peak Off-state Voltage : VDRM=600V. G ᴌR.M.S On-State Current : IT RMS =12A. ᴌHigh Commutaing (dv/dt)
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T12A6CI
E166398)
T12A6CI
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M12J45
Abstract: T M12J45 m12g45 M12J45 OR EQUIVELENT SM12J45A m12g SM12G45 SM12G45A SM12J45 M12-j45
Text: SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage : VDRM = 400, 600V R.M.S On−State Current : IT RMS = 12A
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SM12G45
SM12J45
SM12G45A
SM12J45A
SM12G45
SM12G45A
M12J45
T M12J45
m12g45
M12J45 OR EQUIVELENT
SM12J45A
m12g
M12-j45
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Untitled
Abstract: No abstract text available
Text: SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current : IT RMS = 12A
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SM12G45
SM12J45
SM12G45A
SM12J45A
SM12G45
SM12G45A
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CR8CM-12A
Abstract: No abstract text available
Text: Preliminary Datasheet CR8CM-12A R07DS1034EJ0200 Previous: REJ03G1707-0100 Rev.2.00 Feb 25, 2013 600V - 8A - Thyristor Medium Power Use Features • Non-Insulated Type Planar Passivation Type IT (AV) : 8 A VDRM : 600 V IGT : 15 mA Outline
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CR8CM-12A
R07DS1034EJ0200
REJ03G1707-0100)
PRSS0004AG-A
O-220AB)
PRSS0004AA-A
O-220)
CR8CM-12A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CR6CM-12A R07DS1033EJ0200 Previous: REJ03G1706-0100 Rev.2.00 Feb 25, 2013 600V - 6A - Thyristor Medium Power Use Features • Non-Insulated Type Planar Passivation Type IT (AV) : 6 A VDRM : 600 V IGT : 10 mA Outline
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CR6CM-12A
R07DS1033EJ0200
REJ03G1706-0100)
PRSS0004AG-A
O-220AB)
PRSS0004AA-A
O-220)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CR05BM-12A R07DS0992EJ0100 Rev.1.00 Dec 20, 2012 600V - 0.5A - Thyristor Low Power Use Features • IT AV : 0.5 A VDRM : 600 V IGT : 100 A Planar Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92*)
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CR05BM-12A
R07DS0992EJ0100
PRSS0003EA-A
48sas
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CR8CM-12A R07DS1034EJ0300 Rev.3.00 Jul 30, 2013 600V - 8A - Thyristor Medium Power Use Features • IT AV : 8 A • VDRM : 600 V • IGT : 15 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A
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CR8CM-12A
R07DS1034EJ0300
PRSS0004AG-A
O-220AB)
PRSS0004AA-A
O-220)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CR12CM-12B 600V - 12A - Thyristor R07DS0232EJ0200 Rev.2.00 Feb 25, 2013 Medium Power Use Features • IT AV : 12 A VDRM : 600 V IGT : 30 mA The product guaranteed maximum junction temperature of 150°C Non-Insulated Type
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CR12CM-12B
R07DS0232EJ0200
PRSS0004AG-A
O-220AB)
PRSS0004AA-A
O-220)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CR12CM-12B R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • The product guaranteed maximum junction temperature of 150°C • Non-Insulated Type
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CR12CM-12B
R07DS0232EJ0300
PRSS0004AG-A
O-220AB)
PRSS0004AA-A
O-220)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CR6CM-12A 600V - 6A - Thyristor R07DS1033EJ0300 Rev.3.00 Jul 30, 2013 Medium Power Use Features • IT AV : 6 A • VDRM : 600 V • IGT : 10 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A
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CR6CM-12A
R07DS1033EJ0300
PRSS0004AG-A
O-220AB)
PRSS0004AA-A
O-220)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CR12FM-12B R07DS1100EJ0100 Rev.1.00 Aug 02, 2013 600V-12A-Thyristor Medium Power Use Features • • • • • Insulated Type • Planar Passivation Type IT AV : 12 A VDRM : 600 V IGT : 30 mA Viso : 2000 V Outline RENESAS Package code: PRSS0003AG-A
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CR12FM-12B
R07DS1100EJ0100
00V-12A-Thyristor
PRSS0003AG-A
O-220FP)
R07DS1100EJ0100
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CR5AS12A
Abstract: CR5AS-12A 20-100 general semiconductor mp3a CR3AS-12A
Text: Preliminary Datasheet CR5AS-12A 600V - 5A - Thyristor Medium Power Use R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 Features • Non-Insulated Type Plannar Type IT AV : 5 A VDRM : 600 V IGT : 100 A Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A)
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CR5AS-12A
R07DS0332EJ0300
PRSS0004ZG-A
PRSS0004ZD-D
CR5AS12A
CR5AS-12A
20-100 general semiconductor
mp3a
CR3AS-12A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CR04AM-12A R07DS0636EJ0200 Rev.2.00 Aug 20, 2014 600V - 0.4A - Thyristor Low Power Use Features • • • • IT AV : 0.4 A VDRM : 600 V IGT: 100 A Planar Type Outline RENESAS Package code: PRSS0003EA-A PRSS0003DE-A (Package name: TO-92*) (Package name: TO-92(3)
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CR04AM-12A
R07DS0636EJ0200
PRSS0003EA-A
PRSS0003DE-A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR THYRISTOR CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR12AM It (AV). 12A V d r m . 400V/600V
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CR12AM
00V/600V
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PDF
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DTC12-N
Abstract: No abstract text available
Text: Ordering number : EN1883B N0.1883B _ P T C 1 -2 - N Silicon Planar Type 12A Bidirectional Thyristor F eatu re s •Peak OFF-state voltage : 200 to 600V • RMS ON-state current ; 12A ■TO-220 package A bsolute M axim um R atings at Ta = 25°C
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EN1883B
l883B
T0-220
12C-N
12E-N
12G-N
DTC12-N
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PDF
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BX703
Abstract: DTN12 DTN12E DTN12G BX70
Text: Ordering number: EN 473? DTN12 No.4732 Silicon Diffused Junction Type 12A Bidirectional Thyristor Features • AC power control. - Peak O FF-state voltage : 400, 600V. • RMS ON -state current : 12A. A b so lu te M axim um R a tin g s at Ta = 25°C Repetitive Peak
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DTN12
DTN12E
DTN12G
BX703
DTN12
DTN12E
BX70
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR THYRISTOR CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR12BM V \ V v>. . • It ( a v ) . . 12A • V d r m . . 400V/600V • IGT .
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OCR Scan
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CR12BM
00V/600V
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PDF
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30X30
Abstract: DTM12-N S 80 W
Text: Ordering number : EN1880B DTM12-N Silicon Planar Type 12A Bidirectional Thyristor F e atu re s •Insulation type •Peak OFF-state voltage : 200 to 600V •R M S ON-state current : 12A ■TO-220 package DTM 12C-N 200 A bso lu te M ax im u m R atin g s a tT a = 25°C
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EN1880B
DTM12-N
O-220
12C-N
12E-N
12G-N
30X30
DTM12-N
S 80 W
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PDF
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DTM12C-N
Abstract: DTM12E-N DTM12-N
Text: Ordering number:EN1880B _ DTM12-N Silicon Planar Type IS A 0 Y O I 12A Thyristor - Bidirectional ^ €._ Package Dimensions jtg^ Features • Insulation type* • Peak O FF-state voltagte : 200 to 600V. unit:m m / / 1144 / / * RMS ON'State current : I2A.
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EN1880B
DTM12-N
T0-220
DTM12C-N
DTM12E-N
OTM12G-N
DTM12E-N
DTM12-N
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PDF
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thyristor t 718 n
Abstract: No abstract text available
Text: BI-DIRECTIONAL TRIODE THYRISTOR SM12 D, G,J 45A SILICON PLANAR TYPE AC P O WER C O NTROL A P PL I C AT I O N S. . Repetitive Peak Off-State Voltage : V[)RM= 200 ~ 600V . R.M.S On-State Current : It (RMS)= 12A . 4 Trigger Mode Guarantee . High Commutating (dv/dt)
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SM12D45A
SM12C45A
SM12J45A
thyristor t 718 n
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PDF
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SM12D41
Abstract: SM12J41 TOSHIBA THYRISTOR
Text: BI-DIRECTIONAL TRIODE THYRISTOR SM12 D,G,J 41 SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit in mm FEATURES: 1Û3MAX. . Repetitive Peak Off-State Voltage : V d r m = 2 0 0 — 600V . R.M.S On-State Current : It (RMS)=12A jzia6 ± az . Suitable for Heating Controls, Motor Controls,
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SM12D41
SM12G41
SM12J41
SM12J41
TOSHIBA THYRISTOR
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