mmo-90 14 106
Abstract: w3c2 mmo-90 14 io6 3x82 SOT-227 pcb 9012IO
Text: AC Controller Contents 1600 Type Page 1800 1400 VRRM/VDRM V 600 800 IRMS 1200 AC Controller Circuit configuration A 08 12 14 16 18 1 2 1 2 3 3 4 5 39 86 ● ● ● ● MLO 36-.io1 MLO 75-.io1 G-2 G-5 39 86 ● ● ● ● MMO 36-.io1 MMO 75-.io1 G-2
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2x30-.
2x45-.
2x60-.
mmo-90 14 106
w3c2
mmo-90 14 io6
3x82
SOT-227 pcb
9012IO
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thyristor family
Abstract: diode SOT-82 package P0130AA TN22 TN22-1500 controler 0116
Text: TN22 STARTLIGHT FEATURES VBR : 1200 - 1500V and 1000 - 1600V versions IH > 175 mA IGT < 1.5 mA SOT 194 Plastic DESCRIPTION The TN22 is an high performance asymetrical SCR in high voltage PNPN diffused planar technology. Package either in TO220AB, SOT 82 or SOT 194,
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O220AB,
O220AB
thyristor family
diode SOT-82 package
P0130AA
TN22
TN22-1500
controler 0116
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CLA80E1200HF
Abstract: No abstract text available
Text: CLA80E1200HF High Efficiency Thyristor VRRM = 1200 V I TAV = 80 A VT = 1.38 V Single Thyristor Part number CLA80E1200HF Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip
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CLA80E1200HF
PLUS247
60747and
unl17
20121221b
CLA80E1200HF
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CLA50E1200HB
Abstract: CLA50E 2.5/EQUIVALENT OF CLA50E1200HB
Text: CLA50E1200HB High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200HB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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CLA50E1200HB
O-247
60747and
20120830f
CLA50E1200HB
CLA50E
2.5/EQUIVALENT OF CLA50E1200HB
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CLA80E1200HF
Abstract: No abstract text available
Text: CLA80E1200HF High Efficiency Thyristor VRRM = 1200 V I TAV = 80 A VT = 1.38 V Single Thyristor Part number CLA80E1200HF Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip
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CLA80E1200HF
PLUS247
60747and
20121221b
CLA80E1200HF
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CLA30E1200HB
Abstract: marking code E2 and gate CMA30E1600PB
Text: CLA30E1200HB High Efficiency Thyristor VRRM = 1200 V I TAV = 30 A VT = 1.25 V Single Thyristor Part number CLA30E1200HB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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CLA30E1200HB
O-247
60747and
20121221d
CLA30E1200HB
marking code E2 and gate
CMA30E1600PB
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EQUIVALENT OF CLA50E1200HB
Abstract: 2.5/EQUIVALENT OF CLA50E1200HB cla50E1200hb
Text: CLA50E1200HB High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200HB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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CLA50E1200HB
O-247
60747and
20121213g
EQUIVALENT OF CLA50E1200HB
2.5/EQUIVALENT OF CLA50E1200HB
cla50E1200hb
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CLA50E1200HB
Abstract: EQUIVALENT OF CLA50E1200HB CLA50E1200 2.5/EQUIVALENT OF CLA50E1200HB
Text: CLA50E1200HB High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200HB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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CLA50E1200HB
O-247
60747and
20121221g
CLA50E1200HB
EQUIVALENT OF CLA50E1200HB
CLA50E1200
2.5/EQUIVALENT OF CLA50E1200HB
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Untitled
Abstract: No abstract text available
Text: S EM IK R O N zurück V rsm V rrm V drm V V 1300 1200 SKNH 56/12 E 1500 1400 SKNH 56/14 E 1700 1600 SKNH 56/16 E 1900 1800 SKNH 56/18 E SEMIPACK 1 Modules with Thyristor and Free-Wheeling Diode ld P 3/120, Tamb = 45 °C 70 A Symbol Conditions SKNH 56 SKNH 91 1>
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm
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O-220
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CS thyristor cs 6-06
Abstract: CS 23-16 thyristor CS5 thyristor CS 23-06 thyristor CS thyristor cs 3-04 CS thyristor cs 6 CS 23-04 thyristor CS thyristor cs 3-06 cs 8-12 Thyristor CS 23-08 thyristor
Text: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm
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O-220
-TO-48
CS thyristor cs 6-06
CS 23-16 thyristor
CS5 thyristor
CS 23-06 thyristor
CS thyristor cs 3-04
CS thyristor cs 6
CS 23-04 thyristor
CS thyristor cs 3-06
cs 8-12 Thyristor
CS 23-08 thyristor
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ACS 085
Abstract: thyristor cs 550 THYRISTOR cs 550 16 CS 250-12 thyristor CS 250-14 CS thyristor cs 411-23 abb acs 550 CS thyristor cs 6 CS 250-12
Text: A S E A B R O U N / ABB SEMICON A3 D O M flB O a D .□ □ □ □ 1 7 3 3 J " ' T - 2.5 - 0 Phase control thyristors Netzthyristoren Thyristor Vdrm Vrrm Itrms V A * TvD/tvue rAvi/Tc Itavm To = 85°C ATC A 8,3 ms 10 ms TVJ=45°C tvjm A A2s A2s 400 CS 226-04 go 1
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O-200
U-027-J
T0118
ACS 085
thyristor cs 550
THYRISTOR cs 550 16
CS 250-12 thyristor
CS 250-14
CS thyristor
cs 411-23
abb acs 550
CS thyristor cs 6
CS 250-12
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LT 0216 diode
Abstract: 20/LT 0216 diode Diode LT 410
Text: SGS-THOMSON ;[Li MM D(S MDS50 DIODE / THYRISTOR MODULE FEATURES • V qrm = V rrm UP TO 1200 V ■ lT(AV) = 35 A . HIGH SURGE CAPABILITY . INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for
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MDS50
MDS50
LT 0216 diode
20/LT 0216 diode
Diode LT 410
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Diode LT 410
Abstract: No abstract text available
Text: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier
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MDS35
MDS35
Diode LT 410
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LG_03
Abstract: No abstract text available
Text: Three Phase Rectifier Bridge •TAVM with Fast Diodes and "Softstart" Thyristor V RRM dAVM — 39 A 31 A 1200-1600 V VRRM V DSM VDRM V V 1300 1500 1700 1200 1400 1600 Symbol ^dAV ^dAVM ^TAVM ^F S M ’ ^TSM l2t 5 Maxim um Ratings Diode Thyristor Test Conditions
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36-12go2
36-14go2
36-16go2
F2-62
LG_03
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LT 0216 diode
Abstract: 20/LT 0216 diode
Text: SGS-THOMSON HLKSnnSMBgi MDS35 DIODE /THYRISTOR MODULE FEATURES • V qrm = V rrm UP TO 1200 V ■ It AV = 25 A . HIGH SURGE CAPABILITY . INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MDS35 family are constitued of one rectifier diode and general purpose SCR. Suited for
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MDS35
MDS35
LT 0216 diode
20/LT 0216 diode
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Untitled
Abstract: No abstract text available
Text: 4bfibE2b OOO lbbl 7bl *IXY QIXYS MCC44 lTAV=2 x 49 A MCD44 vRRM= 400-1800 V Thyristor Modules Thyristor/Diode Modules > > > 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1800 1800* Ii V r*m Vo«, V Type Version 1 B MCC44-06ÌO1 MCC44-08ÌO1 MCC44-12io1
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MCC44
MCD44
MCC44-06Ã
MCC44-08Ã
MCC44-12io1
14lo1
MCC44-18io1
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Untitled
Abstract: No abstract text available
Text: □IXYS VW 2x30 AC Controller Modules V RSM V RRM V DSM V DRM V V 800 1200 1400 1600 800 1200 1400 1600 Symbol U ms ^TRMS ^TAVM ^TSM l2t VW2x30-08io1 VW2x30-12io1 VW2x30-14io1 VW2x30-16io1 5 7 6 Tc = 85°C, per phase “ T VJy Tc = 85°C; (180° sine ; per thyristor)
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VW2x30-08io1
VW2x30-12io1
VW2x30-14io1
VW2x30-16io1
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LT 220 diode
Abstract: No abstract text available
Text: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1
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220-12io1
220-14io1
220-16io1
4bflb22b
LT 220 diode
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Untitled
Abstract: No abstract text available
Text: inixYS £ — - . Thyristor Modules Thyristor/Diode Modules . . V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCD 72-08io8 B MCD 72-12io8 B MCD 72-14io8 B
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O-240
72-08io8
72-12io8
72-14io8
72-16i08
72-18io8B
72-08io1
72-12io1
72-14io1
72-16io1
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t02-40
Abstract: No abstract text available
Text: DIXYS Thyristor Modules Thyristor/Diode Modules MCC 56 MCD 56 TRMS TAVM = 2x100 A = 2 x 64 A V RRM = 800 -1800 V T0-240 AA V RSM V VDSM VDRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCC MCC
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2x100
T0-240
56-08io1
56-12io1
56-14io1
56-16io1B
56-18io1B
56-08io8
56-12io8
56-14io8B
t02-40
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Untitled
Abstract: No abstract text available
Text: ÖIXYS Thyristor Modules Thyristor/Diode Modules MCC 26 iTRMS = 2 x 50 A MCD 26 ITAVM = 2 x 3 2 A V RRM = 8 - 1 v RRM V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 800 1200 1400 1600 MCC 26-08ÌO1 B MCC 26-12io1 B MCC 26-14io1 B MCC 26-08ÌO8 B
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O-240
26-12io1
26-14io1
26-12io8
26-14io8
26-16io8
26-16io8B
26-16io1
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thyristor st 103
Abstract: mcc95 16 101 CD-951 MCC90 MCC95-12IO1 v06v MCR-SL-S-1/thyristor st 103
Text: 4bE D • 4bfib22b G D Q i n e S » I X V I X V S CORP D IX Y S T - z s Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 >1 >i > V *» V om V 400 600 800 1200 1400 1600 MCC95 i TAV = 2 x 1 1 6 a MCD95 vRRM= 400- I 600 v Type Version 1 Version 8
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4bfib22b
MCC95
MCD95
CD95-04io8
CD95-06io8
CD95-08io8
CD95-12io8
CD95-14io8
CDd5-16io8
-06io1
thyristor st 103
mcc95 16 101
CD-951
MCC90
MCC95-12IO1
v06v
MCR-SL-S-1/thyristor st 103
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MCC72-12I01
Abstract: v06v 06io1 diode c72
Text: 4bE D • 4bôb22b 000116Ö 3 H I X Y I X Y S CORP BIXYS "T “25-Z3 Version 1 400 600 800 1200 1400 1600 MCC72-06ÌO1 MCC72-08ÎO1 MCC72-12Ì01 MCC72-14Ì01 MCC72-16Ì01 Test conditions ImMâi Ifmhs Tvj=T vjm Tc=85°C; 180°sin Itsmi Ifsm (di/dtJc Version 8
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MCC72
MCD72
D72-04io8
D72-06io8
D72-08io8
MCD72-12iofi
D72-14io8
D72-16io8
MCC72-06
MCC72-08
MCC72-12I01
v06v
06io1
diode c72
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