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    THYRISTOR DTF Search Results

    THYRISTOR DTF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CR8PM-12B-A8#B00 Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    CR3PM-12G-C#B00 Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    5P4J-Z-AZ Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    CR3PM-12G-AT#B00 Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    5P4J-ZK-E2-AZ Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation

    THYRISTOR DTF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mxt 2410 sx

    Abstract: PTC MZ 5 pot 3296 BDXXX lm 7914 pot 3296 small thermo-disc 4011 5106a therm-o-disc lm 3751
    Text: RoHS-COMPLIANT INFORMATION CHART RoHS-compliant refers to no Pb, Cd, Cr+6, Hg, PBB or PBDE unless use exempted or within allowable limits. RoHS 5/6 refers to no Cd, Cr+6, Hg, PBB or PBDE – Pb solder or Pb plating present Telecom exemption . Bourns Product Line


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    PDF CD0402, OD323, CD214A-F, 14A-R, 214B-F, CD214B-R, 214C-F, 214C-R, CD214L-TxxA/CA CD214A-B, mxt 2410 sx PTC MZ 5 pot 3296 BDXXX lm 7914 pot 3296 small thermo-disc 4011 5106a therm-o-disc lm 3751

    smd-transistor DATA BOOK

    Abstract: triac ansteuerung smd-transistor SMD transistors Relais datenblatt RGS 13 simple circuit diagram of electronic choke SITAC P-Channel Depletion Mode Field Effect Transistor SMD transistor Mo Siemens varistor family
    Text: Technische Angaben Technical Information SIPMOS Kleinsignal-Bauelemente SIPMOS Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.


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    SF HD60

    Abstract: ic temperaturregler CMRD4865 miniatur linear potentiometer and gatter CXE DIODE D2425 H12WD4890 hd4850 LR1200480D25R
    Text: DER WELTMARKTEXPERTE FÜR HALBLEITERRELAISTECHNIK Platinenmontage Schaltschrankmontage DIN-Schienenmontage Zusatzmodule E/A-Module Halbleiterrelais • Zusatzmodule • E/A Module C rydom hat einen ausgezeichneten Ruf als Lieferant fortschrittlicher und hochwertiger


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    PDF Bangalore-560001 SF HD60 ic temperaturregler CMRD4865 miniatur linear potentiometer and gatter CXE DIODE D2425 H12WD4890 hd4850 LR1200480D25R

    ATS22C17S6

    Abstract: ATS22C59Q ATS22C48Q schneider star delta timer S1A14738 ATS22C11Q ATS22D62Q 3 phase motor soft starter circuit diagram
    Text: 2354235 11/2008 Altistart 22 Soft start - soft stop unit User manual BBV51330 01/2014 www.schneider-electric.com The information provided in this documentation contains general descriptions and/or technical characteristics of the performance of the products contained herein. This documentation is not intended as a substitute for and is not to be used for determining suitability


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    PDF BBV51330 be/2014 UL508 ATS22â BBV51330 ATS22C17S6 ATS22C59Q ATS22C48Q schneider star delta timer S1A14738 ATS22C11Q ATS22D62Q 3 phase motor soft starter circuit diagram

    SKiip 83 EC 125 T1

    Abstract: SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1 SKiiP 24 NAB 063 T12 skiip 83 ac 128 BUZ78 equivalent SKIIP 81 AC 12 I T1
    Text: 0 Betriebsweise von Leistungshalbleitern Betriebsweise von Leistungshalbleitern 0.1 Elementare Schaltvorgänge Leistungshalbleiter arbeiten bis auf wenige Sonderanwendungen im Schalterbetrieb. Daraus resultieren grundlegende Prinzipien und Funktionsweisen, die in allen leistungselektronischen


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    GCT mitsubishi

    Abstract: TSH-102 TSH-402 FGC400A-130DS symmetrical gate commutated thyristor gct thyristor power inverter CS thyristor MITSUBISHI INVERTER HIGH POWER INVERTER
    Text: Preliminary MITSUBISHI GCT Gate Commutated Turn-ofO THYRISTOR FGC400A130DS HIGH POWER INVERTER USE PRESS PACK TYPE FGC400A- 130DS •Symmetrical GCT Thyristor • I tqrm Repetitive controllable on state current 400A • I t (av :Average on-state current. 180A


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    PDF FGC400A-130DS FGC400A- 130DS 125deg TSH-402 FGC400A GCT mitsubishi TSH-102 TSH-402 FGC400A-130DS symmetrical gate commutated thyristor gct thyristor power inverter CS thyristor MITSUBISHI INVERTER HIGH POWER INVERTER

    power inverter

    Abstract: symmetrical gate commutated thyristor press pack thyristor CS 15 thyristor GATE TURN OFF THYRISTOR 400 V 100 A thyristor cs 52 gct thyristor sinewave inverter circuit Power Thyristor 1500A GCT mitsubishi
    Text: MITSUBISHI GCT Gate Commutated TurirofÖ THYRISTOR FGC1500B-130DS HIGH POWER INVERTER USE PRESS PACK TYPE FGC1500B-130DS •Symmetrical GCT Thyristor •I tqrm Repetitive controllable on state current. 1500A •I t(av :Aver age on-state cu rren t. 500A


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    PDF FGC1500B-130DS 125deg TSH-384 power inverter symmetrical gate commutated thyristor press pack thyristor CS 15 thyristor GATE TURN OFF THYRISTOR 400 V 100 A thyristor cs 52 gct thyristor sinewave inverter circuit Power Thyristor 1500A GCT mitsubishi

    LT 220 diode

    Abstract: No abstract text available
    Text: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1


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    PDF 220-12io1 220-14io1 220-16io1 4bflb22b LT 220 diode

    2N1777A JANTX

    Abstract: 2N1777A 2N1770 2N1774A 4212 triode
    Text: Discrete Semiconductors C10 Series: 2N1770A-2N1777A Semitronics Description Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor sem iconductor devices designed for power switching and phase control applications. They are all-diffused devices


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    PDF 2N1770A-2N1777A IL-PRF-19500/168 AT10H 2N1777A JANTX 2N1777A 2N1770 2N1774A 4212 triode

    BTS115A

    Abstract: No abstract text available
    Text: SIEMENS TEMPFET* • • • • • BTS115A N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints see chapter Technical Information


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    PDF BTS115A O-220AB C67078-S5004-A2 C67078-S5004-A8 BTS115A

    thyristor DTF

    Abstract: BT151 motor speed control BT136 TRIAC equivalent BT136 application note BTA208-600B equivalent om1654 bt138e triac diac rectifier DC motor speed control using diac and triac TRIAC MAC 15A
    Text: Philips Semiconductors Technical Publications Power Thyristors and Triacs Philips Semiconductors publishes many Technical Publications each year on various aspects of power semiconductors. Alt the publications relevant to thyristors and triacs are reproduced in this chapter. They provide


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    34A65

    Abstract: skch4012 P5100 semikron skch 20 12 Semikron SKB b 80 semikron skd 30 P13125 semikron skb 30 semikron skb 60 25A45
    Text: S EM IK R O N D V drm V rsm Tease = .°C, full c o n d u c tio n 40 A (92 °C) 40A (92°C ) 60A (86°C ) 100A(84°C) 400 V SKCH 40/04 SKBT 40/04 SKDT 60/04 SKDT 100/04 800 V 1200 V 1400 V SKCH 40/08 SKCH 40/12 SKCH 40/14 SKBT 40/08 SKBT 40/12 SKBT 40/14


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    PDF SKBT40 1100A2s SKDT60 3600A2s P13/125 P1/120 P1/120 34A65 skch4012 P5100 semikron skch 20 12 Semikron SKB b 80 semikron skd 30 P13125 semikron skb 30 semikron skb 60 25A45

    SC260M

    Abstract: sc260 SC260D SC260M3
    Text: SC260 S C 2 6 0 3 MAC261 Triacs Bidirectional Triode Thyristors . . . designed prim arily for industrial and m ilitary applications for the control of ac loads in applications such as light dimmers, power supplies, heating controls, m otor controls, w elding equipm ent and power switching systems; or wherever


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    PDF SC260 MAC261 SC260M SC260D SC260M3

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 125167/B International S Rectifier s th o s s e rie s PHASE CONTROL THYRISTORS Stud Version Features 110A • C e n te r g a te ■ H e rm e tic m e ta l c a s e with c e ra m ic in s u lato r A lso a v a ila b le w ith g la s s -m e ta l s e a l up to 1 2 0 0 V


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    PDF 125167/B 4A5SM52 ST110S 66ms-

    HSP1072F3

    Abstract: dual Symmetrical Transient Voltage Suppressors
    Text: HSP1072F3, HSP1Q82F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS C o p y rtjftt0 1997. Powgr Innovation» Limited. UK SEPTEMBER 1993 - REVISED SEPTEMBER 1987 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • ton-4mptonted Breakdown Region D PACKAQE TOP View


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    PDF HSP1072F3, HSP1Q82F3 1072F3 FTZR12 VDE0433 K17/K20 PE-60 HSP1072F3 dual Symmetrical Transient Voltage Suppressors

    SL 2128

    Abstract: RA 450 T 20 PE210 SL 2128 8 pin
    Text: TISP7072F3, T1SP7082F3 TRIPLE SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyrights 1997, Power Innovations Umftad, ÜK MARCH 1994 •REV ISED SEPTEM BER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • ton-implanted Breakdown Ragion Precise and Stable Voitags


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    PDF TISP7072F3, T1SP7082F3 7072F3 7082F3 K17/K20 PE-60 SL 2128 RA 450 T 20 PE210 SL 2128 8 pin

    3082f3

    Abstract: No abstract text available
    Text: TISP3072F3, TISP3082F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright 0 1997, Powsf Innovatons Limited, UK MARCH t9 M - REV ISED SEPTEM BER 1*97 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-implanted Breakdown Region Precise and Stable Voltage


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    PDF TISP3072F3, TISP3082F3 3072F3 3082F3 RLM68 FT2R12 VDE0433 K17/K20 PE-60capacitance

    2T33

    Abstract: ty56
    Text: TISP7125F3, TISP7150F3, TISP71S0F3 TDIPLE SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyrights 1997, Power innovators Umftftd, UK MARCH 1994 - REVISEO SEPTEMBER 1987 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-Implanted Breakdown Ragion Prede« and Stable Voltage


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    PDF TISP7125F3, TISP7150F3, TISP71S0F3 7125F3 7180F3 160pS 2T33 ty56

    Untitled

    Abstract: No abstract text available
    Text: T1SP2240F3, TISP2260F3, T1SP2290F3, TISP2320F3, TISP23S0F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS C opyn ÿil 0 1997, Power Innovatori» Limited, UK_ M ARC H 1994 - R E V IS E D SE P T E M B E R 1897 TELECO M M U N IC ATIO N SY ST E M SEC O N O A R Y PRO TEC TIO N


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    PDF T1SP2240F3, TISP2260F3, T1SP2290F3, TISP2320F3, TISP23S0F3 2240F3 2260P3 2290F3 2360F3

    VEB mikroelektronik

    Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
    Text: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden


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    tlc27l41

    Abstract: TLC27L41N tlc27l48c TLC27L4 TLC27L4A TLC27L4B TLC27L4BCD TLC27L4Y TLC27L9 TLC27L9CD
    Text: TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS SLOSQ53C - OCTOBER 1987 - REVISED AUGUST 1994 Trimmed Offset Voltage: TLC27L9 . . . 900 |iV Max at 25°C, VDD = 5 V Input Offset Voltage Drift. . . Typically 0.1 iV/Month, Including the First 30 Days


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    PDF TLC27L4, TLC27L4A, TLC27L4B, TLC27L4Y, TLC27L9 SLOSQ53C 5Vto16V bl724 01QtbT4 tlc27l41 TLC27L41N tlc27l48c TLC27L4 TLC27L4A TLC27L4B TLC27L4BCD TLC27L4Y TLC27L9 TLC27L9CD

    DIL Reed relay RS -349-399

    Abstract: LK NES IEC 292-1 ECG transistor replacement guide book free electrode oven calibration certificate formats dl-1d31 1a. 250v /reed relay rs 349-355 LCD LM 225X Ferroxcube pot core 6656 Semicon volume 1 l/DIL Reed relay RS -349-399 Siemens Optoelectronic Data Book
    Text: Issued November 1987 8420 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system


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    transistor kp 303

    Abstract: KP303A Datenblattsammlung VEB mikroelektronik mikroelektronik datenblattsammlung mikroelektronik DDR D818G KP307A Thyristor T6N KP303D
    Text: In n lD ÍN S r ^ e l e k t r o n l k - B a u e l e m e n t e Mir I r dei Dienstgebrauch !ä SS fil I f ! DATENBLATTSAMMUJNG :Jjj§ •■tai elektronische bauelem ente ìm m ttí H : ■ 51 52 mm i l 11 iS Mm L Â | B « : i ms 1 -% 11 ■IP & 1'86 Die vorliegenden Datenblatt®r d i e n m nur zojp Information« Sie


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    PDF DDR-1035 1/86i 2/84s transistor kp 303 KP303A Datenblattsammlung VEB mikroelektronik mikroelektronik datenblattsammlung mikroelektronik DDR D818G KP307A Thyristor T6N KP303D

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


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