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    TI 906 KOREA Search Results

    TI 906 KOREA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC16244DGGR Texas Instruments 16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
    74ACT11000DR Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy

    TI 906 KOREA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4260 Silicon NPN Epitaxial REJ03G0718-0300 Previous ADE-208-1098A Rev.3.00 Aug.10.2005 Application UHF frequency converter, Wide band amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note:


    Original     		2SC4260 REJ03G0718-0300 ADE-208-1098A) PTSP0003ZA-A PDF

    TI 906 KOREA

    Abstract: 2SC4260 2SC4260TI-TL-E PTSP0003ZA-A
    Text: 2SC4260 Silicon NPN Epitaxial REJ03G0718-0300 Previous ADE-208-1098A Rev.3.00 Aug.10.2005 Application UHF frequency converter, Wide band amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note:


    Original     		2SC4260 REJ03G0718-0300 ADE-208-1098A) PTSP0003ZA-A TI 906 KOREA 2SC4260 2SC4260TI-TL-E PTSP0003ZA-A PDF

    2SK2684

    Abstract: 2SK2684L-E 2SK2684STL-E PRSS0004AE-A
    Text: 2SK2684 L , 2SK2684(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1022-0200 (Previous: ADE-208-542) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current


    Original     		2SK2684 REJ03G1022-0200 ADE-208-542) PRSS0004AE-A PRSS0004AE-B 2SK2684L-E 2SK2684STL-E PRSS0004AE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP6016JPE 600 V - 40 A- N Channel IGBT High Speed Power Switching R07DS0878EJ0100 Rev.1.00 Sep 19, 2012 Features • For Automotive application  AEC-Q101 compliant  Low collector to emitter saturation voltage. VCE sat = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C)


    Original     		RJP6016JPE AEC-Q101 R07DS0878EJ0100 PRSS0004AE-B PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4197 Silicon NPN Epitaxial REJ03G0717-0300 Previous ADE-208-1097A Rev.3.00 Aug.10.2005 Application UHF frequency converter, wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note:


    Original     		2SC4197 REJ03G0717-0300 ADE-208-1097A) PLSP0003ZB-A PDF

    RJK0394DPA

    Abstract: RJK0394DPA-00-J53
    Text: RJK0394DPA Silicon N Channel Power MOS FET Power Switching REJ03G1785-0200 Rev.2.00 Apr 03, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 4.1 mΩ typ. (at VGS = 10 V)


    Original     		RJK0394DPA REJ03G1785-0200 PWSN0008DA-A RJK0394DPA RJK0394DPA-00-J53 PDF

    i-mag 0124

    Abstract: 2SC4197 2SC4197TI-TL-E SC-59A
    Text: 2SC4197 Silicon NPN Epitaxial REJ03G0717-0300 Previous ADE-208-1097A Rev.3.00 Aug.10.2005 Application UHF frequency converter, wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note:


    Original     		2SC4197 REJ03G0717-0300 ADE-208-1097A) PLSP0003ZB-A i-mag 0124 2SC4197 2SC4197TI-TL-E SC-59A PDF

    RJK0354DSP

    Abstract: RJK0354DSP-00-J0
    Text: Preliminary Datasheet RJK0354DSP Silicon N Channel Power MOS FET Power Switching REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Features •    Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.4 m typ. (at VGS = 10 V)


    Original     		RJK0354DSP REJ03G1661-0200 PRSP0008DD-D RJK0354DSP RJK0354DSP-00-J0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M9DNS Silicon N Channel Power MOS FET Power Switching R07DS0775EJ0120 Rev.1.20 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 9.2 m typ. (at VGS = 10 V)


    Original     		RJK03M9DNS R07DS0775EJ0120 PWSN0008JB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Rev.2.10 May 20, 2010 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.5 m typ. (at VGS = 8 V)


    Original     		RJK03E9DPA REJ03G1933-0210 PWSN0008DC-A ca9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100 Power Switching Rev.1.00 Jun 15, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK0213DPA REJ03G1942-0100 PWSN0008DC-A Chan9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0213DPA 25V, 60A, 2.3m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0943EJ0300 Rev.3.00 Mar 21, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current


    Original     		RJK0213DPA R07DS0943EJ0300 PWSN0008DE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJJ0621DPP-E0 R07DS0797EJ0100 Rev.1.00 Jun 08, 2012 P Channel Power MOS FET High Speed Switching Features •    VDSS : –60 V RDS on : 56 m (MAX) ID : –25 A Lead Mount Type (TO-220FP) Outline RENESAS Package code: PRSS0003AG-A


    Original     		RJJ0621DPP-E0 O-220FP) R07DS0797EJ0100 PRSS0003AG-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0354DSP Silicon N Channel Power MOS FET Power Switching REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Features •    Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.4 m typ. (at VGS = 10 V)


    Original     		RJK0354DSP REJ03G1661-0200 PRSP0008DD-D PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03E9DPA 30 V, 35 A, 4.3 m max. N Channel Power MOS FET High Speed Power Switching R07DS0935EJ0300 Previous: REJ03G1933-0210 Rev.3.00 Nov 09, 2012 Features •       High speed switching Capable of 4.5 V gate drive


    Original     		RJK03E9DPA R07DS0935EJ0300 REJ03G1933-0210) PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03E9DPA 30V, 35A, 4.3m max. N Channel Power MOS FET High Speed Power Switching R07DS0935EJ0400 Rev.4.00 Mar 22, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03E9DPA R07DS0935EJ0400 PWSN0008DE-A PDF

    CANTON ELECTRONICS

    Abstract: 2SC4260 2SC4260TI-TL-E PTSP0003ZA-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    RJK0631

    Abstract: RJK0631JPR
    Text: Preliminary Datasheet RJK0631JPR R07DS0879EJ0100 Rev.1.00 Sep 19, 2012 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features •     For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 m typ. Capable of 4.5 V gate drive


    Original     		RJK0631JPR AEC-Q101 R07DS0879EJ0100 PRSS0003AD-A O-220FM) RJK0631 RJK0631JPR PDF

    M62301

    Abstract: No abstract text available
    Text: M62301SP/FP 10 to 12-bit 4-ch Integrating A/D Converter REJ03D0861-0200 Rev.2.00 Dec 15, 2006 Description M62301 semiconductor integrated circuit forms an integrating A/D converter, being connected to a microcomputer unit. By using selection signals and counter clock signals from the unit, a 10 to 12-bit A/D converter can be created at a low


    Original     		M62301SP/FP 12-bit REJ03D0861-0200 M62301 PDF

    Untitled

    Abstract: No abstract text available
    Text: M62301SP/FP 10 to 12-bit 4-ch Integrating A/D Converter REJ03D0861-0300 Rev.3.00 Mar 25, 2008 Description M62301 semiconductor integrated circuit forms an integrating A/D converter, being connected to a microcomputer unit. By using selection signals and counter clock signals from the unit, a 10 to 12-bit A/D converter can be created at a low


    Original     		M62301SP/FP 12-bit REJ03D0861-0300 M62301 PDF

    TG 0201

    Abstract: No abstract text available
    Text: M62301SP/FP 10 to 12-bit 4-ch Integrating A/D Converter REJ03D0861-0201 Rev.2.01 Dec 27, 2007 Description M62301 semiconductor integrated circuit forms an integrating A/D converter, being connected to a microcomputer unit. By using selection signals and counter clock signals from the unit, a 10 to 12-bit A/D converter can be created at a low


    Original     		M62301SP/FP 12-bit REJ03D0861-0201 M62301 TG 0201 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200 Previous: REJ03G1718-0100 Rev.2.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK)


    Original     		RQJ0305EQDQA R07DS0297EJ0200 REJ03G1718-0100) PLSP0003ZB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0300 Rev.3.00 Jan 10, 2014 Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package MPAK


    Original     		RQJ0305EQDQA R07DS0297EJ0300 PLSP0003ZB-A PDF