BUT12
Abstract: C-16 MT46V8M16 MT48LC4M16A2 25L128160
Text: ARM PrimeCell MultiPort Memory Controller PL175 Revision: r1p0 Technical Reference Manual Copyright 2002 ARM Limited. All rights reserved. ARM DDI 0230A ARM PrimeCell MultiPort Memory Controller (PL175) Technical Reference Manual Copyright © 2002 ARM Limited. All rights reserved.
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PL175)
BUT12
C-16
MT46V8M16
MT48LC4M16A2
25L128160
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AM79C901A
Abstract: 79C901 TIC106
Text: PRELIMINARY Am79C901A HomePHY Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS n Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.1 — Optimized for home networking applications
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Am79C901A
RLL25
22304C
79C901
TIC106
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Untitled
Abstract: No abstract text available
Text: QS@GDHDI6S` Ã Am79C901A HomePHY Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS n Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.1 — Optimized for home networking applications
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Am79C901A
RLL25
22304C
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PAL 007 E
Abstract: PAL 007 B PAL 007 c PAL 007 a PAL 007 PAL 007 data sheet AM79C901JC AM79C940b remote control encoder decoder tic 136
Text: PRELIMINARY Am79C901 HomePHY Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS n Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.0 — Optimized for home networking applications
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Am79C901
TBR16
10BASE-T
TBR17
TBR19
TBR24
PAL 007 E
PAL 007 B
PAL 007 c
PAL 007 a
PAL 007
PAL 007 data sheet
AM79C901JC
AM79C940b
remote control encoder decoder
tic 136
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ELPIDA 512MB NOR FLASH
Abstract: MT46V16M16 TIC 122 Transistor datasheet 128M DDR SDR SDRAM samsung 0 micron NAND FLASH INTERCONNECT MT46V8M16 MT48LC4M16A2 PL176 MT28S4M16 Micron MT48LC4M16A2
Text: ARM PrimeCell MultiPort Memory Controller PL176 Revision: r0p1 Technical Reference Manual Copyright 2003 ARM Limited. All rights reserved. ARM DDI 0269A ARM PrimeCell MultiPort Memory Controller (PL176) Technical Reference Manual Copyright © 2003 ARM Limited. All rights reserved.
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PL176)
ELPIDA 512MB NOR FLASH
MT46V16M16
TIC 122 Transistor datasheet
128M DDR SDR SDRAM samsung 0
micron NAND FLASH INTERCONNECT
MT46V8M16
MT48LC4M16A2
PL176
MT28S4M16
Micron MT48LC4M16A2
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EPM7128SQC100-7 pin out
Abstract: BITBLAST epm7128stc100-6 epm7064lc68-12 epm7128stc100 epm7192egm160-15 epm7032sti44-7 EPM7192SQI160-10 EPM7256EGM883 EPM7192SQC1607
Text: MAX 7000 Programmable Logic Device Family June 2003, ver. 6.6 Features. Data Sheet • ■ ■ ■ ■ ■ ■ f High-performance, EEPROM-based programmable logic devices PLDs based on second-generation MAX® architecture 5.0-V in-system programmability (ISP) through the built-in
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7000S
EPM7256EGM883B-15
5962-9324702MXC)
EPM7256EGM883B-20
5962-9324701MXC)
EPM7256EWM208-15
EPM7256EWM208-20
EPM7256EWM883B-15
EPM7128SQC100-7 pin out
BITBLAST
epm7128stc100-6
epm7064lc68-12
epm7128stc100
epm7192egm160-15
epm7032sti44-7
EPM7192SQI160-10
EPM7256EGM883
EPM7192SQC1607
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Untitled
Abstract: No abstract text available
Text: 13 12 10 M AT E R IA F NUMBER « OF COLUMNS tt OF DIFF PAIR DIM "A" MAX DIM ' B “ P TH 0 76X60-*010 10 20 26 .6 0 17.10 0.46 76460-*016 16 32 38 .0 0 28 .5 0 ±0.05 76460 0 - * 76460*020 10 20 26 .6 0 17.10 0.39 76 460-*026 16 32 38 .0 0 28 .5 0 ±0.05 * *
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76X60-
2008/0A/1
SD-76460-0CK
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W3100
Abstract: ERC90M-02
Text: ERC90M-02 5A L O W LOSS SUPER H IG H SPEED RECTIFIER I Features • wmimtf&rnzntzvjm-ji'ru -/ Insulated package by fu lly m o ld in g . • feVp mmm&m Low V F Connection Diagram S u p e r high speed s w itc h in g . • Z f l'—t— tfLfti t z i S S i f ¡B tt
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ERC90M-02
SC-67IIÂ
000n3L.
W3100
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Z3.3
Abstract: No abstract text available
Text: I R atin g s and c h a r a c t e r is t ic s of F u ji I G BT 2 M B I 5 0 J —* 0 6 0 1. M BT Module (TEN TAT IVE ) O u tlin e Drawing U n it : sa * Isolation Voltage : AC2500V 1minute Z- <¿5.4 •O o Q C : |ii lí ■C3 I ! -I o , t .xH 3 <ï io i l !>;
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50A/ps
Z3.3
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272c
Abstract: 121-1001 Q0001 MIL-C-19500 1B80 IN4000 1N3993A 1N4000A DETAILS of ic 4071
Text: MIL SPECS î c | QDQ01ES DQOISTI 5 MIL-S-19500/272C NOTICE 1 5 F e b r u a r y 1988 NOTICE OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Diode, Silicon, V o l t a g e - R e g u l a t o r T y p e TX and NON-TX 1N3 9 9 3 A t h r o u g h 1N40 0 0 A and t h e R A
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MIL-S-19500/272C
1N3993A
1N4000A
Force-17
L-S-19500/272C
MIL-S-19500.
MIL-S-19500
MIL-S-19500/272B.
272c
121-1001
Q0001
MIL-C-19500
1B80
IN4000
DETAILS of ic 4071
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TIC COL 02
Abstract: No abstract text available
Text: M T 4 C 1670/1 L 6 4 K X 16 D R A M I ^ K Z R O N 64K x 16 DRAM STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry standard xl6 pinouts, tim ing, functions and packages • High-performance, C M O S silicon-gate process
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MT4C1670
MT4C1671
225mW
MT4C1670/1
TIC COL 02
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD S5E D • 7^^0741 0QQ11BL Ô2L » S A K J Silicon PNP Epitaxial Planar Darlington ■Maximum Ratings Item Ta = 25°C Symbol Ratings Unit Collector-to-Base Voltage VCBO -1 2 0 V Collector-to-Emitter Voltage VCEO -1 2 0 V Emitter-to-Base Voltage
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0QQ11BL
STA300
STA400
45max
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTR IC CO LTD SS E » M STA43<Ì‘ • 7^0741 OOOllMS T?^ H S A K J Silicon NPN Triple Diffused Planar Darlington ■Maximum Ratings T a = 2 5 -c> t •¡i* I'i ’ 'S k kr ' iL ¿ R A , < .(„/«v i ; j ' R a tin g s • Jr ' J 1# k C o lle c to r-to -B a s e V o lta g e
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STA43<
STA300
STA400
45max
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HPR25
Abstract: AM79C901 circuit diagram of new holland fx 58
Text: P R E L IM IN A R Y AMD£I Am79C901 HomePHY1" Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS • Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.1 — Optimized for home networking applications
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Am79C901
widt86-446188
PI-750-9/99-0
HPR25
circuit diagram of new holland fx 58
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Untitled
Abstract: No abstract text available
Text: SIEMENS 8M X 8-Bit Dynamic RAM 4k & 8k Refresh HYB 3164800J/T-50/-60 HYB 3165800J/T -50/-60 P re lim in a ry In fo rm a tio n • 8 38 8 6 0 8 w o rd s by 8 -b it o rg a n iz a tio n Low p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re
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3164800J/T-50/-60
3165800J/T
800J/T-50/-60
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2AX SMD
Abstract: smd diode marking d06 MANUAL 1023N mcl d01 pal 002 S1021 smd diode UJ 64 A LR38516 hF 6591 ccd sharp
Text: SHARP SPEC No. I SSUE: E L 0 9 9 1 7 2 Sep. 19 1997 S P E C I F I C A T I O N S Product Type M od el N o. T ilin g IC 1 /4 ”35QK,1/3”350K/380K/450K p ix e ls CCD L R 3 8 5 1 6_ j&This s p e c ific a tio n s contains 37 pages including the cover and appendix.
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EL099172
350K/380K/450K
QFP48â
P-0707
AA1035
CV536
2AX SMD
smd diode marking d06
MANUAL 1023N
mcl d01
pal 002
S1021
smd diode UJ 64 A
LR38516
hF 6591
ccd sharp
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4218160LE-60
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD 42S18160, 4 2 1 8 1 6 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ,uPD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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42S18160,
16-BIT,
uPD42S18160
PD42S18160
50-pin
42-pin
4218160LE-60
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UPD444
Abstract: UPD444-1 MPD444
Text: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION T h e /LfPD444 is a high-speed, lo w p o w e r s ilic o n gate C M OS 4 0 9 6 b it s ta tic R A M o rg a n ize d 1 02 4 w o rd s b y 4 b its . I t uses DC stable s ta tic c ir c u itr y th ro u g h o u t and th e re
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uPD444
uPD444-1
uPD444-2
uPD444-3
/LfPD444
LM27S2S
DCH157M
//PD42S18160,
MPD444
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT jUPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE ★ Description The ¿¡PD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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PD42S17800
PD42S17800,
28-pin
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SC11290
Abstract: sc11290cn SC1129 SC112 VP05
Text: SC11290 DTMF Transceiver With Call Progress Detection V SIERRA SEMICONDUCTOR 22-PIN DIP PACKAGE □ □ □ D T M F g e n e ra to r and receiv er E xcellen t sp eech im m u nity T ri-S ta te o u tp u ts 4 -b it h ex a d ecim al fro m receiv er □ A C -C o u p led , internally-b iased
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z--640
SC11290
sc11290cn
SC1129
SC112
VP05
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3R5S
Abstract: No abstract text available
Text: FUJI ;± m « i Fuji New Semiconductor Products 1800V/800A/1 ± * § S IG B T iy n .- A ' 1 M B I 8 0 0 P N MB - 1 8 0 IGBT Low loss • high speed switching IGBT Modules H 4^ JH Features * ¡ ¡¡REEv High voltage, high current • 7 ^ High speed sw itching
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800V/800A/1
3R5S
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Untitled
Abstract: No abstract text available
Text: f Z T SGS-THOMSON *•7#s SD1463 TCC0204-125 RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS • ■ . ■ ■ . 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION p 0UT = 125 W MIN. WITH 7.0 dB GAIN .400 .425 8LFL (M 168) X epoxy sealed O R D ER CODE
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SD1463
TCC0204-125)
SD1463
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n T h e /x P D 4 2 6 4 4 0 0 ,4 2 6 5 4 0 0 a re 1 6 ,7 7 7 ,2 1 6 w o rd s by 4 b its d y n a m ic C M O S R A M s. T h e fa s t p a g e m o d e c a p a b ility
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PD4264400,
040-o
b427S2S
GIIHI42
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / IP D 4 2 S 1 7 8 0 0 L , 4 2 1 7 8 0 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The ¿¡PD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode
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PD42S17800L,
4217800L
PD42S17800L
28-pin
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