tied59
Abstract: TIED56
Text: TEXAS O P T O E L E C TR ON IC S INC IDE D 0^3=134 0000125 4 | 17D / T - L/ J - S 3 TIED59 Avalanche Photodiode T e x a s O p t o e l e c t r o n i c s , Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY FEATURES DESCRIPTION • •
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00D012S
TIED59
TIED59
TIED56
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TIED59
Abstract: TIED56
Text: TIED 5 9 A va la n c h e Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED59 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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TIED59
TIED59
TIED56
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Untitled
Abstract: No abstract text available
Text: •701 TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES Isolated Case fo r Shielding Useful from Audio to Microwave Frequencies Typical Photocurrent Gain > 600 Active Area of 4.5 X 10"3 cm2 Diameter = 30
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TIED59
0-13W/V
TIED59
9J3PL375)
IL235)
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Untitled
Abstract: No abstract text available
Text: TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED59 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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TIED59
TIED59
TIED56
000D524
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tied59
Abstract: TIEF151 TIED56 TIED69
Text: TEXAS OPTOELECTRONICS INC IDE D | 0 ^ 3 ^ 3 4 0G00127 ô | 170/ T-H1-53 TIED69 Avalanche Photodiode Texas Optoelectronics, Inc. FEATURES DESCRIPTION • • • The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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T-m-53
TIED69
TIED69
TIED56
TIED59
TIEF151
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Untitled
Abstract: No abstract text available
Text: ¡M rrn i lllll I • ■ F b TIED 6 9 A v a la n c h e Photodiod e T e x a s O p t o e l e c t r o n ic s , In c . DESCRIPTION FEATURES The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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TIED69
TIED56
TIED59
60toelectronics,
G00D524
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TIED59
Abstract: TIED69 TIED56 TIEF151
Text: ML'IIII il III m I h t I TIED69 Avalanche Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the breakdow n voltage. T h is results in a
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TIED69
TIED69
TIED56
TIED59
125eC
TIEF151
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Untitled
Abstract: No abstract text available
Text: TIED69 Avalanche Photodiode Texas Optoelectronics, Inc. D E SC R IP T IO N FEATURES The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the breakdown voltage. T h is results in a
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TIED69
TIED69
TIED59
3L121-123)
1ZJ83
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TIL702
Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or
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LCC4230-D
EPN4050
TIL702
TIL701
TIL393-9
til78 phototransistor
TIL81
til312 7 segment display
TIL78
TIL393
TIL313
TIL393-6
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