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    Text: TOSHIBA MICROWAVE POWER QaAs FET MICROWAVE SEMICONDUCTOR TIM7I 79-8SL TECHNICAL DATA FEATURES : • LOW IN T E P M O D U L A T IO N D IS T O R T IO N ■ HIGH EFFIC IENC Y qadd * 32 % at 7.1 8H2 to 7 . 1 GHz |M3 a - 4 5 dBc at Po * 28.5 dBm, S ingle C arrier Level


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    PDF 79-8SL 2-11D1B) TIII717MSL