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    TIM5359-8 Price and Stock

    Toshiba America Electronic Components TIM5359-8

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    Velocity Electronics TIM5359-8 4
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    Toshiba America Electronic Components TIM5359-8UL

    MICROWAVE POWER GaAs FET 15V 7A 3-Pin 2-11D1B (Alt: TIM5359-8UL)
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    EBV Elektronik TIM5359-8UL 26 Weeks 1
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    TIM5359-8 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIM5359-8 Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11D1B, 3 PIN, FET RF Power Original PDF
    TIM5359-8 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5359-80SL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 49; G1dB (dB): 7.5; Ids (A) Typ.: 18; IM3 (dBc) Typ.: -30; Rth (°C/W) Typ.: 0.5; Package Type: 7-AA02C Original PDF
    TIM5359-8SL Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power Original PDF
    TIM5359-8SL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM5359-8UL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 39.5; G1dB (dB): 10; Ids (A) Typ.: 2.2; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 2.5; Package Type: 2-11D1B Original PDF