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    TIM7179 Search Results

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    TIM7179 Price and Stock

    Toshiba America Electronic Components TIM7179-30UL

    Trans FET N-CH 15V 18A GaN HEMT 3-Pin 7-AA05A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical TIM7179-30UL 25 1
    • 1 $422.2028
    • 10 $373.8942
    • 100 $365.7529
    • 1000 $365.7529
    • 10000 $365.7529
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    TIM7179 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIM7179-12UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM7179-16 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM7179-16 Toshiba TIM7179 - TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power Original PDF
    TIM7179-16L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM7179-16SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM7179-16SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM7179-16UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM7179-25UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM7179-30L Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM7179-30UL Toshiba TIM7179 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA05A, 2 PIN, FET RF Power Original PDF
    TIM7179-35SL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 7.1-7.9; P1dB (dBm): 45.5; G1dB (dB): 6.5; Ids (A) Typ.: 8; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1; Package Type: 2-16G1B Original PDF
    TIM7179-4 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM7179-4 Toshiba TIM7179 - TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power Original PDF
    TIM7179-45SL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM7179-4SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM7179-4SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM7179-4UL Toshiba Original PDF
    TIM7179-60SL Toshiba C-Band Power GaAs IMFETs Original PDF
    TIM7179-6UL Toshiba Original PDF
    TIM7179-7L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF

    TIM7179 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIM7179-4UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=7.5dB at 7.1GHz to 7.9GHz


    Original     		PDF TIM7179-4SL TIM7179-4UL TIM7179-4UL

    TIM7179-16

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM7179-16 2-16G1B) MW51020196 TIM7179-16

    TIM7179-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 6.0 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM7179-8 2-11D1B) MW50990196 TIM7179-8

    TIM7179-12UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz HIGH GAIN G1dB=9.0dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		PDF TIM7179-12UL TIM7179-12UL

    TIM7179-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		PDF TIM7179-16UL Disto10V TIM7179-16UL

    TIM7179-4SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=7.5dB at 7.1GHz to 7.9GHz


    Original     		PDF TIM7179-4SL TIM7179-4SL

    TIM7179-8UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM7179-8UL TIM7179-8UL

    TIM7179-16L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.1 GHz to 7.9 GHz


    Original     		PDF TIM7179-16L 2-16G1B) MW51030196 TIM7179-16L

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz n HIGH GAIN G1dB=9.0dB at 7.1GHz to 7.9GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM7179-6UL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz n HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM7179-16UL -4779-16UL

    TIM7179-6UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7179-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=9.0dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM7179-6UL TIM7179-6UL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7179-4 MW50970196 TIM7179-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-7L MW50980196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7179-16 MW51020196 TIM7179-16

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDUCTO R TIM7179-14L TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION HIGH GAIN IM 3 = - 4 3 dBc at Po = 31.5 dBm, G1dB = 6.5 dB at 7.1 GHz to 7.9 GHz BROAD BAND INTERNALLY MATCHED Single Carrier Level


    OCR Scan     		PDF TIM7179-14L TIM7179-14LABSOLUTE 2-16G1B) TIM7179-14L---------------POWER

    LDB 107

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-4 TECHNICAL DATA m FEATURES: • HIGH POWER PldB = 36.0 dBm at 7.1 GHz to 7.9 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 6*5 dB at 7.1 GHz to 7.9 GHz ■ HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM7179-4 TIM7179-4--------------------POWER T1IV17179-4 LDB 107

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-16SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION HIGH EFFICIENCY IM3 = - 45 dBc at Po = 31.5 dBm, qadd = 31 % at 7.1 GHz to 7. 9 GHz Single Carrier Level ■ HIGH GAIN HIGH POWER


    OCR Scan     		PDF TIM7179-16SL 31UTE 2-16G1B) TIM7179-16SL------------POWER

    iran

    Abstract: TIM7179-8SL
    Text: TOSHIBA MICROWAVE POWER QaAs FET MICROWAVE SEMICONDUCTOR TIM7179-8SL TECHNICAL DATA FEATURES: • LOW IN T E R M O D U L A T IO N D IS T O R T IO N ■ HIGH EFFICIENCY |M3 a - 4 5 dBc at Po * 28.5 dBm, qadd * 32 % at 7.1 SH* to 7. 1 GHz Single Carrier Level


    OCR Scan     		PDF TIM7179-8SL iran TIM7179-8SL

    TI 365

    Abstract: TIM7179-4SL
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, - Single carrier level • High power - P idB = 36.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - iladd = 33% at 7.1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-4SL QC172SQ C1DC172SQ TI 365 TIM7179-4SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDUCTO R TIM7179-7L TECHNICAL DATA FEATURES : • H IG H G A IN LO W IN T E R M O D U L A T IO N D IS T O R T IO N IM 3 = - 4 3 d B c at Po = 28.5 dBm , G-idB = 7.0 dB at 7.1 G H z to 7.9 G Hz B R O A D B A ND IN T E R N A LLY M A T C H E D


    OCR Scan     		PDF TIM7179-7L TIM7179-7L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8SL Features • Low intermodulation distortion - I M 3 = -4 5 dB c a t Po = 2 8 .5 dBm , - Single carrier level • High pow er - P 1dB = 3 9 .5 dBm at 7.1 G H z to 7 .9 G H z • High efficiency - Tiacjd = 3 2 % at 7.1 G H z to 7 .9 G H z


    OCR Scan     		PDF TIM7179-8SL 2-11D1B)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain


    OCR Scan     		PDF TIM7179-8L MW51000196 TIM7179-8L itH725G

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-16SL Q0225Bb 00225A7

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power * P-idB = 42 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-16L MW51030196 DD22SÃ TIM7179-16L T0T7250 00225A4