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Abstract: No abstract text available
Text: APT30GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)30 Absolute Max. Power Diss. (W)147 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case850m Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.
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APT30GL100BN
Junc-Case850m
delay40n
time130n
time675n
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Abstract: No abstract text available
Text: APT45GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)45 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case625m Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.
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APT45GL100BN
Junc-Case625m
delay40n
time130n
time675n
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Abstract: No abstract text available
Text: APT65GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)65 Absolute Max. Power Diss. (W)245 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case.51 Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.
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APT65GL100BN
delay40n
time130n
time675n
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Abstract: No abstract text available
Text: STE47N50 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)47 Absolute Max. Power Diss. (W)450 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case270m I(DSS) Min. (A)400u I(GSS) Max. (A)400n
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STE47N50
Junc-Case270m
time130nÃ
StyleSOT-227
Code4-166
NumberTR00400166
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Untitled
Abstract: No abstract text available
Text: APT25GF100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)25 Absolute Max. Power Diss. (W)147 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case850m Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.
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APT25GF100BN
Junc-Case850m
delay40n
time130n
time450n
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