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    Text: HGTG20N120E2 Transistors N-Channel IGBT V BR CES (V)1200 V(BR)GES (V) I(C) Max. (A)34 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case0.83 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		HGTG20N120E2 delay100nà time150nà time620n PDF